The surface mechanical attrition treatment (SMAT) technique was developed to synthesize a nanocrystalline (NC) layer on the surface of metallic materials for upgrading their overall properties and performance. In this...The surface mechanical attrition treatment (SMAT) technique was developed to synthesize a nanocrystalline (NC) layer on the surface of metallic materials for upgrading their overall properties and performance. In this paper, by means of SMAT to a pure zirconium plate at the room temperature, repetitive multidirectional peening of steel shots (composition (wt%): 1C, l.SCr, base Fe) severely deformed the surface layer. A NC surface layer consisting of the intermetallic compound FeCr was fabricated on the surface of the zirconium. The microstructure characterization of the surface layer was performed by using X-ray diffraction analysis, optical microscopy, scanning and transmission electron microscopy observations. The NC surface layer was about 25 urn thick and consisted of the intermetallic compound FeCr with an average grain size of 25±10 nm. The deformation-induced fast diffusion of Fe and Cr from the steel shots into Zr occurred during SMAT, leading to the formation of intermetallic compound. In addition, the NC surface layer exhibited an ultrahigh nanohardness of 10.2 GPa.展开更多
By means of surface mechanical attrition (SMA), a nanostructured surface layer was formed on a 0Cr18Ni9Ti austenite stainless steel plate. A strain-induced martensite transformation was observed during SMA treatment, ...By means of surface mechanical attrition (SMA), a nanostructured surface layer was formed on a 0Cr18Ni9Ti austenite stainless steel plate. A strain-induced martensite transformation was observed during SMA treatment, and a single magnetic martensite phase layer with thickness of about 30 μm was gotten. The grain growth and phase transformations in the nanocrystalline layer are investigated during heating. The grain growth exponent for nanocrystalline polycrystalline steel is estimated. The kinetics mechanism governing the grain growth in the nanocrystalline layer is discussed. The martensite in the surface layer is quite stable and the temperature at which the reverse transformation of martensite to austenite starts during heating is about 500 ℃.展开更多
采用超音速微粒轰击技术（Supersonic Fine Particles Bombarding，SFPB）对调质态合金钢38CrSi进行表面纳米化处理；利用X射线衍射、扫描电镜、透射电镜等分析技术研究不同工艺条件下表面纳米化层的微观组织结构特征。结果表明：经SFP...采用超音速微粒轰击技术（Supersonic Fine Particles Bombarding，SFPB）对调质态合金钢38CrSi进行表面纳米化处理；利用X射线衍射、扫描电镜、透射电镜等分析技术研究不同工艺条件下表面纳米化层的微观组织结构特征。结果表明：经SFPB处理后，材料表层组织严重细化，并形成了纳米结构层（晶粒尺寸〈100nm），随处理时间的延长，最表面纳米晶的尺寸变化不大，纳米结构层的厚度有所增加；当处理时间为240s时，在最表面层形成了平均晶粒尺寸约为16nm的具有随机取向的等轴纳米晶。纳米结构层的晶粒尺寸随着距表面距离的增加而增大。在距表面约25μm处，存在着大量的由位错线和高密度的位错缠结分割的胞块，尺寸为80～100nm；分析表明位错运动是表面纳米化的主要原因。展开更多
Amorphous-layer-free nanocrystalline silicon films were prepared by a very high frequency plasma enhanced chem-ical vapor deposition （PECVD） technique using hydrogen-diluted Sill4 at 250 ℃. The dependence of the cr...Amorphous-layer-free nanocrystalline silicon films were prepared by a very high frequency plasma enhanced chem-ical vapor deposition （PECVD） technique using hydrogen-diluted Sill4 at 250 ℃. The dependence of the crystallinity of the film on the hydrogen dilution ratio and the film thickness was investigated. Raman spectra show that the thickness of the initial amorphous incubation layer on silicon oxide gradually decreases with increasing hydrogen dilution ratio. High-resolution transmission electron microscopy reveals that the initial amorphous incubation layer can be completely eliminated at a hydrogen dilution ratio of 98%, which is lower than that needed for the growth of amorphous-layer-free nanocrystalline silicon using an excitation frequency of 13.56 MHz. More studies on the microstructure evolution of the initial amorphous incubation layer with hydrogen dilution ratios were performed using Fourier-transform infrared spectroscopy. It is suggested that the high hydrogen dilution, as well as the higher plasma excitation frequency, plays an important role in the formation of amorphous-layer-free nanocrystalline silicon films.展开更多
This is the first report of an investigation on flexible perovskite solar cells for artificial light harvesting by using a white light-emitting diode （LED） lamp as a light source at 200 and 400 Ix, values typically ...This is the first report of an investigation on flexible perovskite solar cells for artificial light harvesting by using a white light-emitting diode （LED） lamp as a light source at 200 and 400 Ix, values typically found in indoor environments. Flexible cells were developed using either low-temperature sol-gel or atomic- layer-deposited compact layers over conducting polyethylene terephthalate （PET） substrates, together with ultraviolet （UV）-irradiated nanoparticle TiO2 scaffolds, a CH3NHBPbI3xClx perovskite semiconductor, and a spiro-MeOTAD hole transport layer. By guaranteeing high-quality carrier blocking （via the 10-40 nm-thick com- pact layer） and injection （via the nanocrystalline scaffold and perovskite layers） behavior, maximum power conversion efficiencies （PCE） and power densities of 10.8% and 7.2 pW-cm-2, respectively, at 200 lx, and 12.1% and 16.0 -tW＇cm-2, respectively, at 400 lx were achieved. These values are the state-of-the-art, comparable to and even exceeding those of flexible dye-sensitized solar cells under LED lighting, and significantly greater than those for flexible amorphous silicon, which are currently the main flexible photovoltaic technologies commercially considered for indoor applications. Furthermore, there are significant margins of improvement for reaching the best levels of efficiency for rigid glass-based counterparts, which we found was a high of PCE -24% at 400 lx. With respect to rigid devices, flexibility brings the advantages of being low cost, lightweight, very thin, and COlfformal, which is especially important for seamless integration in indoor environments.展开更多
Microwave absorption properties of the nanocrystalline strontium ferrite （SrFe12O19） and iron （α-Fe） microfibers for single-layer and double-layer structures are investigated in a frequency range of 2 GHz 18 GHz....Microwave absorption properties of the nanocrystalline strontium ferrite （SrFe12O19） and iron （α-Fe） microfibers for single-layer and double-layer structures are investigated in a frequency range of 2 GHz 18 GHz. For the singlelayer absorbers, the nanocrystalline SrFe12O19 microfibers show some microwave absorptions at 6 GHz 18 GHz, with a minimum reflection loss （RL） value of -11.9 dB at 14.1 GHz for a specimen thickness of 3.0 mm, while for the nanocrystalline α-Fe microfibers, their absorptions largely take place at 15 GHz-18 GHz with the RL value exceeding -10 dB, with a minimum .RL value of about -24 dB at 17.5 GHz for a specimen thickness of 0.7 mm. For the doublelayer absorber with an absorbing layer of α-Fe microfibers with a thickness of 0.7 mm and matching layer of SrFe12O19 microfibers with a thickness of 1.3 ram, the minimum RL value is about -63 dB at 16.4 GHz and the absorption band width is about 6.7 GHz ranging from 11.3 GHz to 18 GHz with the RL value exceeding -10 dB which covers the whole Ku-band （12.4 GHz 18 GHz） and 27% of X-band （8.2 GHz 12.4 GHz）.展开更多
The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc rea...The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc reaches maximum when the Eg reaches optimum. The reason for the Jsc on Eg needs to be clarified. Our results exhibit that maximum Jsc is the balance between dark current and photocurrent. We show here that this dark current results from the density of defects in the p-layer and the barrier at the interface between p-and i-layers. An optimum cell can be designed by optimizing the p-layer via reducing the density of defects in the p-layer and the barrier at the p/i interface. Finally, a 6.6% increase in Jsc was obtained at optimum Eg for n-i-p solar cells.展开更多
基金supported by the National Natural Science Foundation of Chinathe Chinese Academy of Sciences
文摘The surface mechanical attrition treatment (SMAT) technique was developed to synthesize a nanocrystalline (NC) layer on the surface of metallic materials for upgrading their overall properties and performance. In this paper, by means of SMAT to a pure zirconium plate at the room temperature, repetitive multidirectional peening of steel shots (composition (wt%): 1C, l.SCr, base Fe) severely deformed the surface layer. A NC surface layer consisting of the intermetallic compound FeCr was fabricated on the surface of the zirconium. The microstructure characterization of the surface layer was performed by using X-ray diffraction analysis, optical microscopy, scanning and transmission electron microscopy observations. The NC surface layer was about 25 urn thick and consisted of the intermetallic compound FeCr with an average grain size of 25±10 nm. The deformation-induced fast diffusion of Fe and Cr from the steel shots into Zr occurred during SMAT, leading to the formation of intermetallic compound. In addition, the NC surface layer exhibited an ultrahigh nanohardness of 10.2 GPa.
文摘By means of surface mechanical attrition (SMA), a nanostructured surface layer was formed on a 0Cr18Ni9Ti austenite stainless steel plate. A strain-induced martensite transformation was observed during SMA treatment, and a single magnetic martensite phase layer with thickness of about 30 μm was gotten. The grain growth and phase transformations in the nanocrystalline layer are investigated during heating. The grain growth exponent for nanocrystalline polycrystalline steel is estimated. The kinetics mechanism governing the grain growth in the nanocrystalline layer is discussed. The martensite in the surface layer is quite stable and the temperature at which the reverse transformation of martensite to austenite starts during heating is about 500 ℃.
文摘采用超音速微粒轰击技术（Supersonic Fine Particles Bombarding，SFPB）对调质态合金钢38CrSi进行表面纳米化处理；利用X射线衍射、扫描电镜、透射电镜等分析技术研究不同工艺条件下表面纳米化层的微观组织结构特征。结果表明：经SFPB处理后，材料表层组织严重细化，并形成了纳米结构层（晶粒尺寸〈100nm），随处理时间的延长，最表面纳米晶的尺寸变化不大，纳米结构层的厚度有所增加；当处理时间为240s时，在最表面层形成了平均晶粒尺寸约为16nm的具有随机取向的等轴纳米晶。纳米结构层的晶粒尺寸随着距表面距离的增加而增大。在距表面约25μm处，存在着大量的由位错线和高密度的位错缠结分割的胞块，尺寸为80～100nm；分析表明位错运动是表面纳米化的主要原因。
基金Project supported by the National Natural Science Foundation of China (Grant No. 60806046)the Natural Science Foundation of Guangdong Province of China (Grant No. S2011010001853)the FDYT (Grant No. LYM10099)
文摘Amorphous-layer-free nanocrystalline silicon films were prepared by a very high frequency plasma enhanced chem-ical vapor deposition （PECVD） technique using hydrogen-diluted Sill4 at 250 ℃. The dependence of the crystallinity of the film on the hydrogen dilution ratio and the film thickness was investigated. Raman spectra show that the thickness of the initial amorphous incubation layer on silicon oxide gradually decreases with increasing hydrogen dilution ratio. High-resolution transmission electron microscopy reveals that the initial amorphous incubation layer can be completely eliminated at a hydrogen dilution ratio of 98%, which is lower than that needed for the growth of amorphous-layer-free nanocrystalline silicon using an excitation frequency of 13.56 MHz. More studies on the microstructure evolution of the initial amorphous incubation layer with hydrogen dilution ratios were performed using Fourier-transform infrared spectroscopy. It is suggested that the high hydrogen dilution, as well as the higher plasma excitation frequency, plays an important role in the formation of amorphous-layer-free nanocrystalline silicon films.
文摘This is the first report of an investigation on flexible perovskite solar cells for artificial light harvesting by using a white light-emitting diode （LED） lamp as a light source at 200 and 400 Ix, values typically found in indoor environments. Flexible cells were developed using either low-temperature sol-gel or atomic- layer-deposited compact layers over conducting polyethylene terephthalate （PET） substrates, together with ultraviolet （UV）-irradiated nanoparticle TiO2 scaffolds, a CH3NHBPbI3xClx perovskite semiconductor, and a spiro-MeOTAD hole transport layer. By guaranteeing high-quality carrier blocking （via the 10-40 nm-thick com- pact layer） and injection （via the nanocrystalline scaffold and perovskite layers） behavior, maximum power conversion efficiencies （PCE） and power densities of 10.8% and 7.2 pW-cm-2, respectively, at 200 lx, and 12.1% and 16.0 -tW＇cm-2, respectively, at 400 lx were achieved. These values are the state-of-the-art, comparable to and even exceeding those of flexible dye-sensitized solar cells under LED lighting, and significantly greater than those for flexible amorphous silicon, which are currently the main flexible photovoltaic technologies commercially considered for indoor applications. Furthermore, there are significant margins of improvement for reaching the best levels of efficiency for rigid glass-based counterparts, which we found was a high of PCE -24% at 400 lx. With respect to rigid devices, flexibility brings the advantages of being low cost, lightweight, very thin, and COlfformal, which is especially important for seamless integration in indoor environments.
基金supported by the Aviation Science Foundation,China (Grant No.2009ZF52063)the Research Fund for the Doctoral Program of Higher Education of China (Grant No.20103227110006)the Jiangsu Provincial Postgraduate Cultivation and Innovation Project,China (Grant No.CX10B-257Z)
文摘Microwave absorption properties of the nanocrystalline strontium ferrite （SrFe12O19） and iron （α-Fe） microfibers for single-layer and double-layer structures are investigated in a frequency range of 2 GHz 18 GHz. For the singlelayer absorbers, the nanocrystalline SrFe12O19 microfibers show some microwave absorptions at 6 GHz 18 GHz, with a minimum reflection loss （RL） value of -11.9 dB at 14.1 GHz for a specimen thickness of 3.0 mm, while for the nanocrystalline α-Fe microfibers, their absorptions largely take place at 15 GHz-18 GHz with the RL value exceeding -10 dB, with a minimum .RL value of about -24 dB at 17.5 GHz for a specimen thickness of 0.7 mm. For the doublelayer absorber with an absorbing layer of α-Fe microfibers with a thickness of 0.7 mm and matching layer of SrFe12O19 microfibers with a thickness of 1.3 ram, the minimum RL value is about -63 dB at 16.4 GHz and the absorption band width is about 6.7 GHz ranging from 11.3 GHz to 18 GHz with the RL value exceeding -10 dB which covers the whole Ku-band （12.4 GHz 18 GHz） and 27% of X-band （8.2 GHz 12.4 GHz）.
基金Project partly supported by the National High Technology Research and Development Program of China(No.2011AA050504)
文摘The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc reaches maximum when the Eg reaches optimum. The reason for the Jsc on Eg needs to be clarified. Our results exhibit that maximum Jsc is the balance between dark current and photocurrent. We show here that this dark current results from the density of defects in the p-layer and the barrier at the interface between p-and i-layers. An optimum cell can be designed by optimizing the p-layer via reducing the density of defects in the p-layer and the barrier at the p/i interface. Finally, a 6.6% increase in Jsc was obtained at optimum Eg for n-i-p solar cells.
