We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride （GaN） laser diodes （LDs） theoretically. For the particular LD structure, composed of approximate 4 μm t...We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride （GaN） laser diodes （LDs） theoretically. For the particular LD structure, composed of approximate 4 μm thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5^th order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlat.tice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.展开更多
We propose a novel resonator containing an elliptical microring based on a silicon-on-insulator platform. Simu- lations using the three-dimensional finite-difference time-domain method show that the novel elliptical m...We propose a novel resonator containing an elliptical microring based on a silicon-on-insulator platform. Simu- lations using the three-dimensional finite-difference time-domain method show that the novel elliptical microring can efficiently enhance the mode coupling between straight bus waveguides and resonator waveguides or between adjacent resonators while preserving relatively high intrinsic quality factors with large free spectral range. The proposed resonator would be an alternative choice for future high-density integrated photonic circuits.展开更多
基金financially supported by National Natural Science Foundation of China(51237005,51307120 and 51207106)Tianjin education commission research project(20120416)
基金Project supported by the Wang Faculty Fellowship at Peking University,Beijing,China,2006-2007 through California State University (CSU) International Programs USAthe National Basic Research Program of China (Grant No 2007CB307004)+1 种基金the National High Technology Research and Development Program of China (Grant No 2006AA03A113)the National Natural Science Foundation of China (Grant Nos 60276034,60577030 and 60607003)
文摘We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride （GaN） laser diodes （LDs） theoretically. For the particular LD structure, composed of approximate 4 μm thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5^th order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlat.tice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.
基金Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301701, 2012CB933502, and2012CB933504)the National Natural Science Foundation of China (Grant Nos. 60877036 and 61107048)the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KGCX2-EW-102)
文摘We propose a novel resonator containing an elliptical microring based on a silicon-on-insulator platform. Simu- lations using the three-dimensional finite-difference time-domain method show that the novel elliptical microring can efficiently enhance the mode coupling between straight bus waveguides and resonator waveguides or between adjacent resonators while preserving relatively high intrinsic quality factors with large free spectral range. The proposed resonator would be an alternative choice for future high-density integrated photonic circuits.
