文章设计了一款基于氮化镓(GaN)的微机械谐振器。该器件采用氮化镓具有较高的声速和优异的压电系数性质及其二维电子气(two-dimensional electron gas,2DEG)作为可开关嵌入电极,通过压电材料薄膜内正交应力(σ_(x)和σ_(y))产生厚度剪...文章设计了一款基于氮化镓(GaN)的微机械谐振器。该器件采用氮化镓具有较高的声速和优异的压电系数性质及其二维电子气(two-dimensional electron gas,2DEG)作为可开关嵌入电极,通过压电材料薄膜内正交应力(σ_(x)和σ_(y))产生厚度剪切振动模式实现增强器件振荡特性;采用平面和微机械工艺进行流片,详细说明了器件工艺过程,特别是肖特基和欧姆接触工艺,得到了尺寸为70μm×100μm谐振单元物理。该器件由电极、压电薄膜、电极组成高迁移率晶体管(high electron mobility transition,HEMT)结构,使得谐振器增加了机电共振效果。测试结果表明器件的谐振频率为26.3 MHz,品质因数为2620。通过实验对器件施加不同的栅极电压,在AlGaN/GaN界面上由于自发极化和压电极化而能够产生较大电荷密度和较高速的电子迁移率的二维电子气层。实验结果表明:HEMT的栅极电压引起的沟道的2DEG对谐振器的机电转换特性具有一定的影响,提高了谐振器的性能。该研究对于谐振器的研制具有一定的指导意义。展开更多
This paper reports a radial-contour-mode micromechanical disk resonator for radio frequency applications. This disk resonator with a gold plated layer as the electrodes, was prepared on a silicon-on-insulator wafer, w...This paper reports a radial-contour-mode micromechanical disk resonator for radio frequency applications. This disk resonator with a gold plated layer as the electrodes, was prepared on a silicon-on-insulator wafer, which is supported by an anchor on another silicon wafer through Au-Au thermo-compression bonding. The gap between the disk and the surrounding gold electrodes is 100 nm. The radius of the disk is 20μm and the thickness is 4.5 μm. In results, the resonator shows a resonant frequency of 143 MHz and a quality factor of 5600 in vacuum展开更多
文摘文章设计了一款基于氮化镓(GaN)的微机械谐振器。该器件采用氮化镓具有较高的声速和优异的压电系数性质及其二维电子气(two-dimensional electron gas,2DEG)作为可开关嵌入电极,通过压电材料薄膜内正交应力(σ_(x)和σ_(y))产生厚度剪切振动模式实现增强器件振荡特性;采用平面和微机械工艺进行流片,详细说明了器件工艺过程,特别是肖特基和欧姆接触工艺,得到了尺寸为70μm×100μm谐振单元物理。该器件由电极、压电薄膜、电极组成高迁移率晶体管(high electron mobility transition,HEMT)结构,使得谐振器增加了机电共振效果。测试结果表明器件的谐振频率为26.3 MHz,品质因数为2620。通过实验对器件施加不同的栅极电压,在AlGaN/GaN界面上由于自发极化和压电极化而能够产生较大电荷密度和较高速的电子迁移率的二维电子气层。实验结果表明:HEMT的栅极电压引起的沟道的2DEG对谐振器的机电转换特性具有一定的影响,提高了谐振器的性能。该研究对于谐振器的研制具有一定的指导意义。
文摘This paper reports a radial-contour-mode micromechanical disk resonator for radio frequency applications. This disk resonator with a gold plated layer as the electrodes, was prepared on a silicon-on-insulator wafer, which is supported by an anchor on another silicon wafer through Au-Au thermo-compression bonding. The gap between the disk and the surrounding gold electrodes is 100 nm. The radius of the disk is 20μm and the thickness is 4.5 μm. In results, the resonator shows a resonant frequency of 143 MHz and a quality factor of 5600 in vacuum
