Vertical p-type gallium arsenide （GaAs） nanowires with pure zinc blende structure were grown on GaAs （111） B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The...Vertical p-type gallium arsenide （GaAs） nanowires with pure zinc blende structure were grown on GaAs （111） B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc （DEZn）. In the high Ⅱ/Ⅲ ratio range （Ⅱ/Ⅲ〉9.1%）, there exists a critical length beyond which kinking takes place. Two possible reasons are discussed. Zn occurrence in the nanowires was verified by energy dispersive X-ray （EDX） analysis. Corresponding to Ⅱ/Ⅲ = 0.2%, the doping concentration is about 8 × 10^18 cm^-3.展开更多
基金Project supported by the National Basic Research Program of China(No.2010CB327601)the Key International Cooperation Research Project of the National Natural Science Foundation of China(No.90201035)+2 种基金the Chinese Universities Scientific Fund(No. BUPT2009RC0410)the National Natural Science Foundation of China(No.61077049)the 111 Program of China(No.B07005).
文摘Vertical p-type gallium arsenide （GaAs） nanowires with pure zinc blende structure were grown on GaAs （111） B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc （DEZn）. In the high Ⅱ/Ⅲ ratio range （Ⅱ/Ⅲ〉9.1%）, there exists a critical length beyond which kinking takes place. Two possible reasons are discussed. Zn occurrence in the nanowires was verified by energy dispersive X-ray （EDX） analysis. Corresponding to Ⅱ/Ⅲ = 0.2%, the doping concentration is about 8 × 10^18 cm^-3.
