By anchoring Tb^(3+)ions on its free carboxyl groups of the nanocaged NiMOF,a dual-emission self-calibrating sensor of Tb^(3+)@NiMOF was fabricated through coordination post-synthetic modification(PSM)strategy.With Tb...By anchoring Tb^(3+)ions on its free carboxyl groups of the nanocaged NiMOF,a dual-emission self-calibrating sensor of Tb^(3+)@NiMOF was fabricated through coordination post-synthetic modification(PSM)strategy.With Tb^(3+)ions as the secondary fluorescent signal and sensing active sites,Tb^(3+)@NiMOF presents great potentials in visually and efficiently monitoring EPI in serum,with high sensitivity and selectivity,fast response,excellent recyclable,and the low detection limit(LOD,3.06 ng/mL).Furthermore,a tandem combinational logic gate based intelligent detection system was constructed to improve the practicability and convenience of epinephrine(EPI)detection in serum by comparing the light emitted colour with the series standard colour cards preset in the smartphone.This work provides a promising approach of developing metal-organic frameworks(MOFs)based self-calibrating sensors for intelligent detection of bioactive molecules.展开更多
Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing ga...Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing gate oxide defects(ΔV_(HT)),and the generation of gate oxide defects(ΔV_(OT)).In this work,the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate(HKMG)process is thoroughly studied.The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature.The effects of the three underlying subcomponents are evaluated by using the comprehensive models.It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress.Moreover,the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted.The dependence of operating lifetime on stress bias and temperature is also discussed.It is observed that NBTI lifetime significantly decreases as the stress increases.Furthermore,the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.展开更多
Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap leng...Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices,such as the on-state current(I_(on)),ambipolar current(I_(amb)),transconductance(g_(m)),cut-off frequency(f_(T))and gain–bandwidth product(GBP),are analyzed and compared in this work.Also,a combination of both the dual-metal gate and gate–drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET(CSP-DMUN-TFET),which contains a C-shaped pocket area that significantly increases the on-state current of the device;this combination design substantially reduces the ambipolar current.The results show that the CSP-DMUN-TFET demonstrates an excellent performance,including high I_(on)(9.03×10^(-4)A/μm),high I_(on)/I_(off)(~10^(11)),low SS_(avg)(~13 mV/dec),and low I_(amb)(2.15×10^(-17)A/μm).The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents,making it a potential replacement in the next generation of semiconductor devices.展开更多
Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of tu...Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.展开更多
Optical logic gates call for materials with giant optical nonlinearity to break the current performance bottleneck.Metal–organic frameworks(MOFs)provide an intriguing route to achieve superior optical nonlinearity be...Optical logic gates call for materials with giant optical nonlinearity to break the current performance bottleneck.Metal–organic frameworks(MOFs)provide an intriguing route to achieve superior optical nonlinearity benefitting from structural diversity and design flexibility.However,the potential of MOFs for optoelectronics has been largely overlooked and their applications in optical logic have not been exploited.Here,through temporally manipulating the nonlinear optical absorption process in porphyrin-based MOFs,we have successfully developed AND and XOR logic gates with an ultrafast speed approaching 1 THz and an on–off ratio above 90%.On this basis,all-optical information encryption is further demonstrated using transmittance as primary codes,which shows vast prospects in avoiding the disclosure of security information.To the best of our knowledge,this is the first exploration of MOFs for applications in ultrafast optical logic devices and information encryption.展开更多
A flexible metal-organic framework of la Cu（FMA）（4,4＇-Bpe）0.s （FMA=fumarate; 4,4＇Bpe=trans-bis-（4-pyridyl）ethylene） that exhibits guest molecule-controlled gate-opening adsorption has been reported, in which...A flexible metal-organic framework of la Cu（FMA）（4,4＇-Bpe）0.s （FMA=fumarate; 4,4＇Bpe=trans-bis-（4-pyridyl）ethylene） that exhibits guest molecule-controlled gate-opening adsorption has been reported, in which the flexible pores can be enlarged by CO2 molecules rather than CH4 and N2 under a certain gate-opening pressure. The CO2 uptake can be sharply improved from 6.85 cm3 gq at 0.60 atm to 33.7 cm3 g^-1 at 1 atm due to the gate-opening effect, thus resulting in the notably enhanced adsorption selectivities for CO2/CH4 （32：1, v/v） and CO2/N2 （48：1, v/v） separations at room temperature.展开更多
Transition metals such as Fe in porphyrin complexes are known to bind or react with O2,and such reactions are critical to many biological functions and catalytic oxidation using O2.The transition metals in these react...Transition metals such as Fe in porphyrin complexes are known to bind or react with O2,and such reactions are critical to many biological functions and catalytic oxidation using O2.The transition metals in these reactions often contain valence d electrons,and oxidation of metals is an important step.In recent years,reactions of O2 with d0 transition metal complexes such as Hf(NR2)4(R=alkyl) have been used to make metal oxide thin films as insulating gate materials in new microelectronic devices.This feature article discusses our recent studies of such reactions and the formation of TiO2 thin films.In contrast to the reactions of many dn complexes where metals are often oxidized,reactions of d0 complexes such as Hf(NMe2)4 and Ta(NMe2)4(SiR3) with O2 usually lead to the oxidation of ligands,forming,e.g.,-ONMe2 and -OSiR3 from-NMe2 and-SiR3 ligands,respectively.Mechanistic and theoretical studies of these reactions have revealed pathways in the formation of the metal oxide thin films as microelectronic materials.展开更多
TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor （MOSFET） is grown by the atorr/ic layer deposition method using TiCI4 and AI（CH3） 3 （TMA） as precursors. It is found that the major PrOd...TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor （MOSFET） is grown by the atorr/ic layer deposition method using TiCI4 and AI（CH3） 3 （TMA） as precursors. It is found that the major PrOduct of the TIC14 and TMA reaction is TiA1C, and the components of C and A1 are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy （XPS）, Fourier transform infrared spectroscopy （FFIR）, and scanning electron microscope （SEM）. The reaction mechanism is as follows. Ti is generated through the reduction of TiCI4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TIC14 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving A1 into the TiC film and leading to TiA1C formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and A1 in the TiA1C film. Thus, the film composition can be controlled by the growth temperature to a certain extent.展开更多
基金Project supported by the National Natural Science Foundation of China(21801230,21905255)Natural Science Foundation of Shanxi Province(202203021211090)+2 种基金Young Academic Leader Supported Program of North University of China(QX201904)Shanxi Key Laboratory of Advanced Carbon Electrode Materials(202104010910019)The Key Laboratory Research Foundation of North University of China。
文摘By anchoring Tb^(3+)ions on its free carboxyl groups of the nanocaged NiMOF,a dual-emission self-calibrating sensor of Tb^(3+)@NiMOF was fabricated through coordination post-synthetic modification(PSM)strategy.With Tb^(3+)ions as the secondary fluorescent signal and sensing active sites,Tb^(3+)@NiMOF presents great potentials in visually and efficiently monitoring EPI in serum,with high sensitivity and selectivity,fast response,excellent recyclable,and the low detection limit(LOD,3.06 ng/mL).Furthermore,a tandem combinational logic gate based intelligent detection system was constructed to improve the practicability and convenience of epinephrine(EPI)detection in serum by comparing the light emitted colour with the series standard colour cards preset in the smartphone.This work provides a promising approach of developing metal-organic frameworks(MOFs)based self-calibrating sensors for intelligent detection of bioactive molecules.
文摘Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing gate oxide defects(ΔV_(HT)),and the generation of gate oxide defects(ΔV_(OT)).In this work,the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate(HKMG)process is thoroughly studied.The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature.The effects of the three underlying subcomponents are evaluated by using the comprehensive models.It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress.Moreover,the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted.The dependence of operating lifetime on stress bias and temperature is also discussed.It is observed that NBTI lifetime significantly decreases as the stress increases.Furthermore,the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.52177185 and 62174055)。
文摘Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices,such as the on-state current(I_(on)),ambipolar current(I_(amb)),transconductance(g_(m)),cut-off frequency(f_(T))and gain–bandwidth product(GBP),are analyzed and compared in this work.Also,a combination of both the dual-metal gate and gate–drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET(CSP-DMUN-TFET),which contains a C-shaped pocket area that significantly increases the on-state current of the device;this combination design substantially reduces the ambipolar current.The results show that the CSP-DMUN-TFET demonstrates an excellent performance,including high I_(on)(9.03×10^(-4)A/μm),high I_(on)/I_(off)(~10^(11)),low SS_(avg)(~13 mV/dec),and low I_(amb)(2.15×10^(-17)A/μm).The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents,making it a potential replacement in the next generation of semiconductor devices.
基金supported by Grant RGC 16215720 from the Science and Technology Program of Shenzhen under JCYJ20200109140601691Grant GHP/018/21SZ from the Innovation and Technology Fund+1 种基金Grant SGDX20211123145404006 from the Science and Technology Program of ShenzhenFundamental and Applied Fundamental Research Fund of Guangdong Province 2021B1515130001。
文摘Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.
基金supported by Science Challenge Project(no.TZ2018001)National Natural Science Foundation of China(nos.11872058 and 21802036)Project of State Key Laboratory of Environment-friendly Energy Materials,and Southwest University of Science and Technology(21fksy07).
文摘Optical logic gates call for materials with giant optical nonlinearity to break the current performance bottleneck.Metal–organic frameworks(MOFs)provide an intriguing route to achieve superior optical nonlinearity benefitting from structural diversity and design flexibility.However,the potential of MOFs for optoelectronics has been largely overlooked and their applications in optical logic have not been exploited.Here,through temporally manipulating the nonlinear optical absorption process in porphyrin-based MOFs,we have successfully developed AND and XOR logic gates with an ultrafast speed approaching 1 THz and an on–off ratio above 90%.On this basis,all-optical information encryption is further demonstrated using transmittance as primary codes,which shows vast prospects in avoiding the disclosure of security information.To the best of our knowledge,this is the first exploration of MOFs for applications in ultrafast optical logic devices and information encryption.
基金supported by an award AX-1730 from the Welch Foundation (BC)
文摘A flexible metal-organic framework of la Cu（FMA）（4,4＇-Bpe）0.s （FMA=fumarate; 4,4＇Bpe=trans-bis-（4-pyridyl）ethylene） that exhibits guest molecule-controlled gate-opening adsorption has been reported, in which the flexible pores can be enlarged by CO2 molecules rather than CH4 and N2 under a certain gate-opening pressure. The CO2 uptake can be sharply improved from 6.85 cm3 gq at 0.60 atm to 33.7 cm3 g^-1 at 1 atm due to the gate-opening effect, thus resulting in the notably enhanced adsorption selectivities for CO2/CH4 （32：1, v/v） and CO2/N2 （48：1, v/v） separations at room temperature.
基金Supported by the U.S. National Science Foundation (CHE-051692), Research Grants Council of Hong Kong and the British Royal Society Kan Tong Po Visiting Professorship Program
文摘Transition metals such as Fe in porphyrin complexes are known to bind or react with O2,and such reactions are critical to many biological functions and catalytic oxidation using O2.The transition metals in these reactions often contain valence d electrons,and oxidation of metals is an important step.In recent years,reactions of O2 with d0 transition metal complexes such as Hf(NR2)4(R=alkyl) have been used to make metal oxide thin films as insulating gate materials in new microelectronic devices.This feature article discusses our recent studies of such reactions and the formation of TiO2 thin films.In contrast to the reactions of many dn complexes where metals are often oxidized,reactions of d0 complexes such as Hf(NMe2)4 and Ta(NMe2)4(SiR3) with O2 usually lead to the oxidation of ligands,forming,e.g.,-ONMe2 and -OSiR3 from-NMe2 and-SiR3 ligands,respectively.Mechanistic and theoretical studies of these reactions have revealed pathways in the formation of the metal oxide thin films as microelectronic materials.
基金Project supported by the Key Technology Study for 16/14 nm Program of the Ministry of Science and Technology of China(Grant No.2013ZX02303)
文摘TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor （MOSFET） is grown by the atorr/ic layer deposition method using TiCI4 and AI（CH3） 3 （TMA） as precursors. It is found that the major PrOduct of the TIC14 and TMA reaction is TiA1C, and the components of C and A1 are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy （XPS）, Fourier transform infrared spectroscopy （FFIR）, and scanning electron microscope （SEM）. The reaction mechanism is as follows. Ti is generated through the reduction of TiCI4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TIC14 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving A1 into the TiC film and leading to TiA1C formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and A1 in the TiA1C film. Thus, the film composition can be controlled by the growth temperature to a certain extent.
