A limiting amplifier IC implemented in 65nm CMOS technology and intended for high-speed op- tical fiber communications is described in this paper. The inductorless limiting amplifier incorporates 5-stage 8 dB gain lim...A limiting amplifier IC implemented in 65nm CMOS technology and intended for high-speed op- tical fiber communications is described in this paper. The inductorless limiting amplifier incorporates 5-stage 8 dB gain limiting cells with active feedback and negative Miller capacitance, a high speed output buffer with novel third order active feedback, and a high speed full-wave rectifier. The re- ceiver signal strength indictor （RSSI） can detect input signal power with 33dB dynamic range, and the limiting amplifier features a programmable loss of signal （LOS） indication with external resistor. The sensitivity of the limiting amplifier is 5.5mV at BER = 10^ -12 and the layout area is only 0.53 × 0.72 mm^2 because of no passive inductor. The total gain is over 41dB, and bandwidth exceeds 12GHz with 56mW power dissipation.展开更多
基金Supported by the National High Technology Research and Development Programme of China(No.2011AA010301)the National Natural Science Foundation of China(No.60976029)
文摘A limiting amplifier IC implemented in 65nm CMOS technology and intended for high-speed op- tical fiber communications is described in this paper. The inductorless limiting amplifier incorporates 5-stage 8 dB gain limiting cells with active feedback and negative Miller capacitance, a high speed output buffer with novel third order active feedback, and a high speed full-wave rectifier. The re- ceiver signal strength indictor （RSSI） can detect input signal power with 33dB dynamic range, and the limiting amplifier features a programmable loss of signal （LOS） indication with external resistor. The sensitivity of the limiting amplifier is 5.5mV at BER = 10^ -12 and the layout area is only 0.53 × 0.72 mm^2 because of no passive inductor. The total gain is over 41dB, and bandwidth exceeds 12GHz with 56mW power dissipation.
