目的采用meta分析评价全膝关节置换术(TKA)在血友病性关节炎(HA)患者中的治疗效果,总结血友病患者术后关节功能康复质量及并发症发生率,为临床干预提供循证医学依据。方法检索中国知网(CNKI)、中国生物医学文献服务系统(CBM)、万方、维...目的采用meta分析评价全膝关节置换术(TKA)在血友病性关节炎(HA)患者中的治疗效果,总结血友病患者术后关节功能康复质量及并发症发生率,为临床干预提供循证医学依据。方法检索中国知网(CNKI)、中国生物医学文献服务系统(CBM)、万方、维普、Pubmed、Web of Science、Embase数据库,收集报道HA患者行TKA后功能康复质量的研究,检索时限为各库建库至2023年3月,由2位评价员进行独立文献筛选、提取资料并评价纳入研究质量后,采用Stata15.0软件进行meta分析。结果共纳入20篇文献,共计686例患者,897个关节,平均随访时间6个月至18年,膝关节协会评分(KSS)量表临床维度评分为81.20(95%CI:75.36~87.03),KSS量表功能维度评分为81.95(95%CI:71.34~92.57),并发症发生率为0.16(95%CI:0.11~0.22),美国特种外科医院膝关节评分(HHS)量表评分为88.72(95%CI:85.11~92.33),膝关节关节活动度(ROM)为85.06(95%CI:75.73~94.39),膝关节屈曲挛缩为5.76(95%CI:2.62~8.91)。结论现有证据表明,TKA能够有效提高HA患者的关节功能,保障患者术后康复质量,可作为HA患者的治疗选择。展开更多
<span style="font-family:""><span style="font-family:Verdana;">Unicondylar Knee Arthroplasty (UKA) is an early alternative surgical procedure for the unicondylar osteoarthritis or ...<span style="font-family:""><span style="font-family:Verdana;">Unicondylar Knee Arthroplasty (UKA) is an early alternative surgical procedure for the unicondylar osteoarthritis or damaged knee joint with artificial </span><span style="font-family:Verdana;">prosthesis for the release of disabling painful condition and restoring the</span><span style="font-family:Verdana;"> normal knee functions. Minimally UKA is one of the recent and the majority successful procedures in modern orthopedics for the osteoarthritis which is spreading throughout the worldwide. Recently, many orthopedic surgeons are expanding their abilities in this field. However, it needs good knowledge and well experience for the successful clinical outcomes. The minimal invasive approach is more efficient for short hospital stay and faster postoperative recovery with low morbidity of the patients after UKA. The aim of this article is to emphasize the steps in UKA based on modern facts: function of knee joint, diagnosis, less invasive approach for medial condylar replacement, radiographic evaluation, and earlier recovery, selecting the patient and implant survivorship with review of surgery.展开更多
In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor （MIS） high electron mobility transistors （HEMTs）, we demonst...In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor （MIS） high electron mobility transistors （HEMTs）, we demonstrate better performances of recessed-gate A1203 MIS-HEMTs which are fabricated by Fluorine-based Si3N4 etching and chlorine- based A1CaN etching with three etching times （15 s, 17 s and 19 s）. The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of A1GaN/CaN HEMT. Through the recessed-gate etching, the transconductanee increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with Tit----（0.20--1.59） p^s and Dit ：（0.55-1.08）x 1012 cm-2.eV- 1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AIGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time （15 s in this paper） can enhance the performances of MIS-HEMTs effectively.展开更多
文摘目的采用meta分析评价全膝关节置换术(TKA)在血友病性关节炎(HA)患者中的治疗效果,总结血友病患者术后关节功能康复质量及并发症发生率,为临床干预提供循证医学依据。方法检索中国知网(CNKI)、中国生物医学文献服务系统(CBM)、万方、维普、Pubmed、Web of Science、Embase数据库,收集报道HA患者行TKA后功能康复质量的研究,检索时限为各库建库至2023年3月,由2位评价员进行独立文献筛选、提取资料并评价纳入研究质量后,采用Stata15.0软件进行meta分析。结果共纳入20篇文献,共计686例患者,897个关节,平均随访时间6个月至18年,膝关节协会评分(KSS)量表临床维度评分为81.20(95%CI:75.36~87.03),KSS量表功能维度评分为81.95(95%CI:71.34~92.57),并发症发生率为0.16(95%CI:0.11~0.22),美国特种外科医院膝关节评分(HHS)量表评分为88.72(95%CI:85.11~92.33),膝关节关节活动度(ROM)为85.06(95%CI:75.73~94.39),膝关节屈曲挛缩为5.76(95%CI:2.62~8.91)。结论现有证据表明,TKA能够有效提高HA患者的关节功能,保障患者术后康复质量,可作为HA患者的治疗选择。
文摘<span style="font-family:""><span style="font-family:Verdana;">Unicondylar Knee Arthroplasty (UKA) is an early alternative surgical procedure for the unicondylar osteoarthritis or damaged knee joint with artificial </span><span style="font-family:Verdana;">prosthesis for the release of disabling painful condition and restoring the</span><span style="font-family:Verdana;"> normal knee functions. Minimally UKA is one of the recent and the majority successful procedures in modern orthopedics for the osteoarthritis which is spreading throughout the worldwide. Recently, many orthopedic surgeons are expanding their abilities in this field. However, it needs good knowledge and well experience for the successful clinical outcomes. The minimal invasive approach is more efficient for short hospital stay and faster postoperative recovery with low morbidity of the patients after UKA. The aim of this article is to emphasize the steps in UKA based on modern facts: function of knee joint, diagnosis, less invasive approach for medial condylar replacement, radiographic evaluation, and earlier recovery, selecting the patient and implant survivorship with review of surgery.
基金supported by the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002)the National Natural Science Foundation of China (Grant No. 60736033)
文摘In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor （MIS） high electron mobility transistors （HEMTs）, we demonstrate better performances of recessed-gate A1203 MIS-HEMTs which are fabricated by Fluorine-based Si3N4 etching and chlorine- based A1CaN etching with three etching times （15 s, 17 s and 19 s）. The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of A1GaN/CaN HEMT. Through the recessed-gate etching, the transconductanee increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with Tit----（0.20--1.59） p^s and Dit ：（0.55-1.08）x 1012 cm-2.eV- 1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AIGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time （15 s in this paper） can enhance the performances of MIS-HEMTs effectively.
