根据大功率红外激光器功率-电压-电流(Power-Voltage-Intensity of current,PVI)曲线的特点,提出一种双环控制结构的恒流驱动电源设计方案。硬件电流控制环路采用深度电流负反馈电路实现了高精度恒流驱动;数字式控制环路根据激光器工作...根据大功率红外激光器功率-电压-电流(Power-Voltage-Intensity of current,PVI)曲线的特点,提出一种双环控制结构的恒流驱动电源设计方案。硬件电流控制环路采用深度电流负反馈电路实现了高精度恒流驱动;数字式控制环路根据激光器工作电流实时调节DCDC输出电压,使得恒流电路中MOSFET稳态压降保持恒定,从而在保证电流控制精度的同时显著提升了系统效率。本文首先分析了激光器PVI曲线的特点,提出了系统总体设计思路,然后重点阐述了输出可调的DCDC电源模块和硬件恒流驱动电路的设计方法,并详细介绍通讯软件和DCDC电压控制算法的实现过程,最后给出了DCDC电源效率和电流控制的测试结果,通过与传统方案的对比测试验证了本设计在系统效率上的优势。展开更多
InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pai...InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).展开更多
文摘根据大功率红外激光器功率-电压-电流(Power-Voltage-Intensity of current,PVI)曲线的特点,提出一种双环控制结构的恒流驱动电源设计方案。硬件电流控制环路采用深度电流负反馈电路实现了高精度恒流驱动;数字式控制环路根据激光器工作电流实时调节DCDC输出电压,使得恒流电路中MOSFET稳态压降保持恒定,从而在保证电流控制精度的同时显著提升了系统效率。本文首先分析了激光器PVI曲线的特点,提出了系统总体设计思路,然后重点阐述了输出可调的DCDC电源模块和硬件恒流驱动电路的设计方法,并详细介绍通讯软件和DCDC电压控制算法的实现过程,最后给出了DCDC电源效率和电流控制的测试结果,通过与传统方案的对比测试验证了本设计在系统效率上的优势。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61790580 and 61435012)the National Basic Research Program of China(Grant No.2014CB643903)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)
文摘InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).
