The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precip...The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.展开更多
ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed b...ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed by the Hall Technique, X-ray diffraction, and X-ray photoelectron spectroscopy. XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The degree of crystallinity increases from less than 45% to more than 90% when the substrate temperature increases from 80 to 300 ℃. The In and Sn exist in the chemical state of In^3＋ and Sn^4＋, respectively, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body. For ITO films deposited under 180 ℃ , the carrier concentration are mainly provided by oxygen vacancies, and the dominant electron carrier scattering mechanism is grain boundary scattering between the crystal and the amorphous grain. For ITO films deposited over 180 ℃, the carrier concentration are provided by tin doping, and the dominant scattering mechanism transforms from grain boundary scattering between the crystal grains to ionized impurity scattering with increasing deposition temperature.展开更多
采用直流磁控溅射方法在室温下玻璃基板上制备ITO（Indium tin oxide）薄膜，并在真空中不同温度（100℃-400℃）下退火处理。研究了退火对薄膜表面形貌、电光特性的影响。XRD测试发现薄膜在200℃退火后结晶，优选晶向为（222）。随退...采用直流磁控溅射方法在室温下玻璃基板上制备ITO（Indium tin oxide）薄膜，并在真空中不同温度（100℃-400℃）下退火处理。研究了退火对薄膜表面形貌、电光特性的影响。XRD测试发现薄膜在200℃退火后结晶，优选晶向为（222）。随退火温度升高，方块电阻迅速下降，表面更加平整，薄膜在可见光范围平均透过率提高到85％。展开更多
基金supported by the National High-Tech Research and Development Program of China(No. 2004AA303542)
文摘The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.
文摘ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed by the Hall Technique, X-ray diffraction, and X-ray photoelectron spectroscopy. XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The degree of crystallinity increases from less than 45% to more than 90% when the substrate temperature increases from 80 to 300 ℃. The In and Sn exist in the chemical state of In^3＋ and Sn^4＋, respectively, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body. For ITO films deposited under 180 ℃ , the carrier concentration are mainly provided by oxygen vacancies, and the dominant electron carrier scattering mechanism is grain boundary scattering between the crystal and the amorphous grain. For ITO films deposited over 180 ℃, the carrier concentration are provided by tin doping, and the dominant scattering mechanism transforms from grain boundary scattering between the crystal grains to ionized impurity scattering with increasing deposition temperature.
文摘采用直流磁控溅射方法在室温下玻璃基板上制备ITO（Indium tin oxide）薄膜，并在真空中不同温度（100℃-400℃）下退火处理。研究了退火对薄膜表面形貌、电光特性的影响。XRD测试发现薄膜在200℃退火后结晶，优选晶向为（222）。随退火温度升高，方块电阻迅速下降，表面更加平整，薄膜在可见光范围平均透过率提高到85％。
