A novel solution-are discharge surface modification technique has been introduced in this paper,ln this modification technique, the speed of mass transport in surface and diffusion Layer is much higher than that of ot...A novel solution-are discharge surface modification technique has been introduced in this paper,ln this modification technique, the speed of mass transport in surface and diffusion Layer is much higher than that of other ways, such as ion implantation, PVD, CVD, PCVD, glow discharge plasma treatment, etc. The solution-arc discharge plasma belongs to a plasma in high air pressure. Its cathode electric field, electric charge density and current density are much larger than those of Low temperature plasma. The voltage-current characteristic has been measured. Mechanical and electrochemical properties of some steel treated with solution-arc discharge have been studied. As to the mechanism of this technique, an analysis has been given.展开更多
Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 ...Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at 750 ℃～850 ℃ for 10 s or at 700 ℃ for 40 s,the implantation induced damage can be removed,the carrier mobility was about 300 cm 2/V·s and the activity was nearly 100%.展开更多
文摘A novel solution-are discharge surface modification technique has been introduced in this paper,ln this modification technique, the speed of mass transport in surface and diffusion Layer is much higher than that of other ways, such as ion implantation, PVD, CVD, PCVD, glow discharge plasma treatment, etc. The solution-arc discharge plasma belongs to a plasma in high air pressure. Its cathode electric field, electric charge density and current density are much larger than those of Low temperature plasma. The voltage-current characteristic has been measured. Mechanical and electrochemical properties of some steel treated with solution-arc discharge have been studied. As to the mechanism of this technique, an analysis has been given.
文摘Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at 750 ℃～850 ℃ for 10 s or at 700 ℃ for 40 s,the implantation induced damage can be removed,the carrier mobility was about 300 cm 2/V·s and the activity was nearly 100%.
