In this paper,the etching characteristics of the ultra-high resistivity silicon（UHRS） by using the Bosch process were investigated.The experimental results indicated that the sulfur hexafluoride flux,the temperature...In this paper,the etching characteristics of the ultra-high resistivity silicon（UHRS） by using the Bosch process were investigated.The experimental results indicated that the sulfur hexafluoride flux,the temperature of the substrate,the platen power and the etching intermittence had important influence on the etching rate and the etching morphology of the UHRS.The profiles and morphologies of sidewall were characterized with scanning electron microscopy（SEM）.By using an improved three-stage Bosch process,380-μm deep through holes were fabricated on the UHRS with the average etching rate of about 3.14 μm/min.Meanwhile,the fabrication mechanism of deep through holes on the UHRS by using the three-stage Bosch process was illustrated on the basis of the experimental results.展开更多
In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon （HR-Si） by micro-electronics process. The results of simulation are consistent with results of measur...In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon （HR-Si） by micro-electronics process. The results of simulation are consistent with results of measurement for the antenna. The mode of the antenna is vertical and horizontal bidirectional radiations. The gain of antenna is 2.5 dB, and the resonance frequency approximately is 3 GHz. This fabrication can be compatible with antenna integration and CMOS process. The parameters of this antenna are for reference radar antenna system of Unmanned Aerial Vehicles （UAV）, satellite transmission, and communication.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.61574108,61574112,61504099)
文摘In this paper,the etching characteristics of the ultra-high resistivity silicon（UHRS） by using the Bosch process were investigated.The experimental results indicated that the sulfur hexafluoride flux,the temperature of the substrate,the platen power and the etching intermittence had important influence on the etching rate and the etching morphology of the UHRS.The profiles and morphologies of sidewall were characterized with scanning electron microscopy（SEM）.By using an improved three-stage Bosch process,380-μm deep through holes were fabricated on the UHRS with the average etching rate of about 3.14 μm/min.Meanwhile,the fabrication mechanism of deep through holes on the UHRS by using the three-stage Bosch process was illustrated on the basis of the experimental results.
基金the National Natural Science Foundation of China (Grants No. 60676047)Applied Materials-Shanghai Research and Development Fund (Grants No.06SA11)
文摘In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon （HR-Si） by micro-electronics process. The results of simulation are consistent with results of measurement for the antenna. The mode of the antenna is vertical and horizontal bidirectional radiations. The gain of antenna is 2.5 dB, and the resonance frequency approximately is 3 GHz. This fabrication can be compatible with antenna integration and CMOS process. The parameters of this antenna are for reference radar antenna system of Unmanned Aerial Vehicles （UAV）, satellite transmission, and communication.
