A novel buffer layer consists of titanium oxide grown on a-sapphire by low-pressure chemical vapor deposition using titanum-tetra-iso-propoxide and oxygen gas was used for ZnO epitaxial growth at temperature as low as...A novel buffer layer consists of titanium oxide grown on a-sapphire by low-pressure chemical vapor deposition using titanum-tetra-iso-propoxide and oxygen gas was used for ZnO epitaxial growth at temperature as low as 340℃ by plasma-assisted epitaxy using radio-frequency oxygen-gas plasma. XRD and RHEED indicated (0001)Ti2O3 layer in corundum crystal system was epitaxially grown on the substrate in an in-plane relationship of [1-100]Ti2O3// [0001]Al2O3 by uniaxial phase-lock system. Growth behavior of ZnO layer was significantly dependent on the Ti2O3 buffer-layer thickness, for example, dense columnar ZnO-grains were grown on the buffer layer thinner than 10 nm but the hexagonal pyramid-like grains were formed on the thin buffer layers below 2 nm. RHEED observations showed ZnO layer including the pyramid-like grains was epitaxially grown with single-domain on the thin buffer layer of 0.8 nm in the in-plane relationship of [1-100]ZnO//[1-100]Ti2O3//[0001]Al2O3, whereas the multi-domain was included in ZnO layer on the buffer layer above 10 nm.展开更多
The work presented previously by the authors(Cai and Liou,1982)has been extended in this paper. By making use of our improved model the calculations on scattering phase matrices of hexagonal prism ice crystals(HPIC)ha...The work presented previously by the authors(Cai and Liou,1982)has been extended in this paper. By making use of our improved model the calculations on scattering phase matrices of hexagonal prism ice crystals(HPIC)have been conducted for monodisperse and polydisperse systems.Compared with the model of Cai and Liou,the required computational quantity is decreased by about two orders of magni- tude and the errors of results are less for the new model.Meanwhile,the scattering phase matrices of triangular pyramid ice crystals(TPIC)are also computed in the paper,and the comparison between the scatterings of the two forms of ice crystals is performed.展开更多
文摘A novel buffer layer consists of titanium oxide grown on a-sapphire by low-pressure chemical vapor deposition using titanum-tetra-iso-propoxide and oxygen gas was used for ZnO epitaxial growth at temperature as low as 340℃ by plasma-assisted epitaxy using radio-frequency oxygen-gas plasma. XRD and RHEED indicated (0001)Ti2O3 layer in corundum crystal system was epitaxially grown on the substrate in an in-plane relationship of [1-100]Ti2O3// [0001]Al2O3 by uniaxial phase-lock system. Growth behavior of ZnO layer was significantly dependent on the Ti2O3 buffer-layer thickness, for example, dense columnar ZnO-grains were grown on the buffer layer thinner than 10 nm but the hexagonal pyramid-like grains were formed on the thin buffer layers below 2 nm. RHEED observations showed ZnO layer including the pyramid-like grains was epitaxially grown with single-domain on the thin buffer layer of 0.8 nm in the in-plane relationship of [1-100]ZnO//[1-100]Ti2O3//[0001]Al2O3, whereas the multi-domain was included in ZnO layer on the buffer layer above 10 nm.
文摘The work presented previously by the authors(Cai and Liou,1982)has been extended in this paper. By making use of our improved model the calculations on scattering phase matrices of hexagonal prism ice crystals(HPIC)have been conducted for monodisperse and polydisperse systems.Compared with the model of Cai and Liou,the required computational quantity is decreased by about two orders of magni- tude and the errors of results are less for the new model.Meanwhile,the scattering phase matrices of triangular pyramid ice crystals(TPIC)are also computed in the paper,and the comparison between the scatterings of the two forms of ice crystals is performed.
