GaN-based blue light emitting diodes （LEDs） have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency （EQE） of GaN-based g...GaN-based blue light emitting diodes （LEDs） have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency （EQE） of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantu.m well （QW） with low strain. Many techniques of improving efficiency are discussed, such as inserting A1GaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported： high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2, and the relevant techniques are detailed.展开更多
氮化镓基发光二极管(LED)具有绿色环保、节能降耗以及寿命长等优点,广泛应用在半导体照明、户外显示及可见光通信等领域。绿光LED有源区的In组分很高,会导致更高的缺陷密度和更大的极化电场,因此其内量子效率还不到蓝光LED的一半,是三...氮化镓基发光二极管(LED)具有绿色环保、节能降耗以及寿命长等优点,广泛应用在半导体照明、户外显示及可见光通信等领域。绿光LED有源区的In组分很高,会导致更高的缺陷密度和更大的极化电场,因此其内量子效率还不到蓝光LED的一半,是三基色照明急需解决的难点。本文对目前提升In Ga N/Ga N多量子阱绿光LED的关键技术和主要进展进行了综述。通过P型层生长工艺优化、变温量子阱及复合缓冲层等技术改善量子阱晶体质量,通过阶梯量子阱结构和半极性In Ga N量子阱生长技术来降低极化电场强度,最终提高绿光LED的内量子效率。展开更多
In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LE...In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.展开更多
基金Project supported by the Key Program of the National Natural Science Foundation of China(Grant No.61334001)the National Natural Science Foundation of China(Grant Nos.11364034 and 21405076)+1 种基金the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(Grant No.2011BAE32B01)the National High Technology Research and Development Program of China(Grant No.2011AA03A101)
文摘GaN-based blue light emitting diodes （LEDs） have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency （EQE） of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantu.m well （QW） with low strain. Many techniques of improving efficiency are discussed, such as inserting A1GaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported： high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2, and the relevant techniques are detailed.
文摘氮化镓基发光二极管(LED)具有绿色环保、节能降耗以及寿命长等优点,广泛应用在半导体照明、户外显示及可见光通信等领域。绿光LED有源区的In组分很高,会导致更高的缺陷密度和更大的极化电场,因此其内量子效率还不到蓝光LED的一半,是三基色照明急需解决的难点。本文对目前提升In Ga N/Ga N多量子阱绿光LED的关键技术和主要进展进行了综述。通过P型层生长工艺优化、变温量子阱及复合缓冲层等技术改善量子阱晶体质量,通过阶梯量子阱结构和半极性In Ga N量子阱生长技术来降低极化电场强度,最终提高绿光LED的内量子效率。
基金supported by the National Natural Science Foundation of China(Grant Nos.11204360 and 61210014)the Science and Technology Planning Projects of Guangdong Province,China(Grant Nos.2014B050505020,2015B010114007,and 2014B090904045)+2 种基金the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20134407110008)the Guangzhou Municipal Science and Technology Project of Guangdong Province,China(Grant No.2016201604030027)the Zhongshan Science and Technology Project of Guangdong Province,China(Grant No.2013B3FC0003)
文摘In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.
