An improved electromechanical model of the RF MEMS(radio frequency microelec- tromechanical systems)switches is introduced,in which the effects of intrinsic residual stress from fabrication processes,axial stress due ...An improved electromechanical model of the RF MEMS(radio frequency microelec- tromechanical systems)switches is introduced,in which the effects of intrinsic residual stress from fabrication processes,axial stress due to stretching of beam,and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model.A semi- analytical method is developed to calculate the behavior of the RF MEMS switches.Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared,and the corresponding analysis with the dimensionless numbers is conducted too.The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.展开更多
The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate m...The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate model and avalanche multiplication integral formula. Wolff's ionization rate model was selected according to the structure and the multiplication gate amplitude of the actual devices. Compared the theoretical result with the multiplication curve of the actual device, it was found that only enough fringing field strength and multiplication area length could lead to adequate signal charge multiplication. The relationship between the multiplication gate amplitude and the total gain of the cascaded boosting EMCCD can be conveniently determined by using this model.展开更多
A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate（CSG） MOSFETs has been developed.Based on this a subthreshold drai...A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate（CSG） MOSFETs has been developed.Based on this a subthreshold drain current model has also been derived.This model first computes the charge induced in the drain/source region due to the fringing capacitances and considers an effective charge distribution in the cylindrically extended source/drain region for the development of a simple and compact model.The fringing gate capacitances taken into account are outer fringe capacitance,inner fringe capacitance,overlap capacitance,and sidewall capacitance.The model has been verified with the data extracted from 3D TCAD simulations of CSG MOSFETs and was found to be working satisfactorily.展开更多
A 90°mixed-mode twisted nematic liquid-crystal-on-silicon(90°-MTN LCoS) with protrusion located between the adjacent pixels is proposed to reduce the effect of fringing field. The influence of the protrusion...A 90°mixed-mode twisted nematic liquid-crystal-on-silicon(90°-MTN LCoS) with protrusion located between the adjacent pixels is proposed to reduce the effect of fringing field. The influence of the protrusion with different widths from0.5 μm to 0.9 μm and different heights from 0.3 μm to 0.7 μm is investigated. The results demonstrate that the invalid pixel region width can be reduced by 31.5% via using the protrusion with the suitable width and height compared with no protrusion case, which provides a higher display quality, such as the higher reflectance and contrast ratio.展开更多
In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived th...In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.展开更多
基金The project supported by the National Natural Science Foundation of China,the Chinese Academy of Sciences,the RGC/NSFC Joint Research Scheme (N-HKUST 601/01)the Joint Laboratory of Microsystems
文摘An improved electromechanical model of the RF MEMS(radio frequency microelec- tromechanical systems)switches is introduced,in which the effects of intrinsic residual stress from fabrication processes,axial stress due to stretching of beam,and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model.A semi- analytical method is developed to calculate the behavior of the RF MEMS switches.Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared,and the corresponding analysis with the dimensionless numbers is conducted too.The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.
文摘The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate model and avalanche multiplication integral formula. Wolff's ionization rate model was selected according to the structure and the multiplication gate amplitude of the actual devices. Compared the theoretical result with the multiplication curve of the actual device, it was found that only enough fringing field strength and multiplication area length could lead to adequate signal charge multiplication. The relationship between the multiplication gate amplitude and the total gain of the cascaded boosting EMCCD can be conveniently determined by using this model.
基金Project supported by the AICTE(No.8023/BOR/RID/RPS-253/2008-09)the SMDP-Ⅱ Project(No.21(1)/2005-VCND) by MCIT, DeiTy,Govt of India
文摘A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate（CSG） MOSFETs has been developed.Based on this a subthreshold drain current model has also been derived.This model first computes the charge induced in the drain/source region due to the fringing capacitances and considers an effective charge distribution in the cylindrically extended source/drain region for the development of a simple and compact model.The fringing gate capacitances taken into account are outer fringe capacitance,inner fringe capacitance,overlap capacitance,and sidewall capacitance.The model has been verified with the data extracted from 3D TCAD simulations of CSG MOSFETs and was found to be working satisfactorily.
基金supported by the National Key Research and Development Program of China (Grant No. 2018YFB0703701)the National Natural Science Foundation of China (Grant No. 61475042)。
文摘A 90°mixed-mode twisted nematic liquid-crystal-on-silicon(90°-MTN LCoS) with protrusion located between the adjacent pixels is proposed to reduce the effect of fringing field. The influence of the protrusion with different widths from0.5 μm to 0.9 μm and different heights from 0.3 μm to 0.7 μm is investigated. The results demonstrate that the invalid pixel region width can be reduced by 31.5% via using the protrusion with the suitable width and height compared with no protrusion case, which provides a higher display quality, such as the higher reflectance and contrast ratio.
基金Project supported by the National Natural Science Foundation of China （Grant No 60376019）.
文摘In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.
