A passive Q-switched flash-lamp-pumped Nd∶YAG laser with the ion-implanted semi-insulating GaAs wafer is reported.The wafer is implanted with 400keV As+ ions in the concentration of 10 16cm -2.Using GaAs wafer as a...A passive Q-switched flash-lamp-pumped Nd∶YAG laser with the ion-implanted semi-insulating GaAs wafer is reported.The wafer is implanted with 400keV As+ ions in the concentration of 10 16cm -2.Using GaAs wafer as an absorber and an output coupler,62ns pulse duration of single pulse is obtained.展开更多
文摘A passive Q-switched flash-lamp-pumped Nd∶YAG laser with the ion-implanted semi-insulating GaAs wafer is reported.The wafer is implanted with 400keV As+ ions in the concentration of 10 16cm -2.Using GaAs wafer as an absorber and an output coupler,62ns pulse duration of single pulse is obtained.
