Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering.In recent years,lift-off and transfer technology of the epitaxial oxide thin ...Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering.In recent years,lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations.Moreover,twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures.A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process,which could provide some insight in to the physical phenomena.In this work,the La_(0.67)Sr_(0.33)MnO_(3)(001)/0.7Pb(Mg_(1/3)Nb_(2/3))O_(3)-0.3PbTiO_(3)(011)(LSMO/PMN-PT)heterostructures with 45.and 0.twist angles were assembled via water-etching and transfer process.The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO<110>.A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO[110]easy axis is observed for the 45°Sample by applying a 7.2 kV cm^(−1)electrical field,significantly different from a uniaxial anisotropy with LSMO[100]easy axis for the 0°Sample.The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45°twist angle causes different lattice distortion of LSMO,thereby enhancing both the fourfold and uniaxial anisotropy.This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.展开更多
We report a new approach for the self-assembly of cuboid micro-parts onto Si substrates to construct three-dimensional microstructures. To perform assembly, the Si substrates are prepared with a deep cavity array as b...We report a new approach for the self-assembly of cuboid micro-parts onto Si substrates to construct three-dimensional microstructures. To perform assembly, the Si substrates are prepared with a deep cavity array as binding sites. An aggregate composed of hundreds of uniformly aligned micro-parts is formed at the C10F18-H2O interface. The micro-parts are arranged by passing the substrate through the aggregate of micro-parts, thus the micro-parts are left on the substrate, and then the substrate is vibrated ultrasonically in the solution, making it possible for the micro-parts to fall into the cavities on the substrate. Finally the substrate is pulled out of the solution after assembly. This technique could give a high yield of up to 70%, providing a new method for micro-assembly.展开更多
Practical solar energy solutions must not only reduce the cost of the module,but also address the substantial balance of system costs.Here,we demonstrate a counter-intuitive approach based on gallium arsenide solar ce...Practical solar energy solutions must not only reduce the cost of the module,but also address the substantial balance of system costs.Here,we demonstrate a counter-intuitive approach based on gallium arsenide solar cells that can achieve extremely low-cost solar energy conversion with an estimated cost of only 3% that of conventional gallium arsenide solar cells using an accelerated,non-destructive epitaxial lift-off wafer recycling process along with a lightweight,thermoformed plastic,truncated mini-compound parabolic concentrator that avoids the need for active solar tracking.Using solar cell/concentrator assemblies whose orientations are adjusted only a few times per year,the annual energy harvesting is increased by 2.8 times compared with planar solar cells without solar tracking.These results represent a potentially drastic cost reduction in both the module and the balance of system costs compared with heavy,rigid conventional modules and trackers that are subject to wind loading damage and high installation costs.展开更多
High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is ...High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is required.Herein,a large-sized(>2 cm^(2))of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique.The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas(2DEG)and phonons.The saturation current of the flexible HEMT is enhanced by 3.15%under the 0.547%tensile condition,and the thermal degradation of the HEMT was also obviously suppressed under compressive straining.The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism.This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs,but also demonstrates a low-cost method to optimize its electronic and thermal properties.展开更多
A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the th...A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template.展开更多
基金supported by the National Key Research and Development Program of China (Grant No. 2021YFB3201800)Natural Science Foundation of China (Grant Nos. U22A2019, 91964109, 52372123)+3 种基金State Key Laboratory for Mechanical Behavior of Materials (No. 20222405)Innovation Capability Support Program of Shaanxi (Grant No. 2021TD-12)National 111 Project of China (B14040)support from the Instrumental Analysis Center of Xi’an Jiaotong University
文摘Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering.In recent years,lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations.Moreover,twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures.A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process,which could provide some insight in to the physical phenomena.In this work,the La_(0.67)Sr_(0.33)MnO_(3)(001)/0.7Pb(Mg_(1/3)Nb_(2/3))O_(3)-0.3PbTiO_(3)(011)(LSMO/PMN-PT)heterostructures with 45.and 0.twist angles were assembled via water-etching and transfer process.The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO<110>.A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO[110]easy axis is observed for the 45°Sample by applying a 7.2 kV cm^(−1)electrical field,significantly different from a uniaxial anisotropy with LSMO[100]easy axis for the 0°Sample.The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45°twist angle causes different lattice distortion of LSMO,thereby enhancing both the fourfold and uniaxial anisotropy.This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.
基金Supported by the National Natural Science Foundation of China under Grant No 90207006.
文摘We report a new approach for the self-assembly of cuboid micro-parts onto Si substrates to construct three-dimensional microstructures. To perform assembly, the Si substrates are prepared with a deep cavity array as binding sites. An aggregate composed of hundreds of uniformly aligned micro-parts is formed at the C10F18-H2O interface. The micro-parts are arranged by passing the substrate through the aggregate of micro-parts, thus the micro-parts are left on the substrate, and then the substrate is vibrated ultrasonically in the solution, making it possible for the micro-parts to fall into the cavities on the substrate. Finally the substrate is pulled out of the solution after assembly. This technique could give a high yield of up to 70%, providing a new method for micro-assembly.
文摘Practical solar energy solutions must not only reduce the cost of the module,but also address the substantial balance of system costs.Here,we demonstrate a counter-intuitive approach based on gallium arsenide solar cells that can achieve extremely low-cost solar energy conversion with an estimated cost of only 3% that of conventional gallium arsenide solar cells using an accelerated,non-destructive epitaxial lift-off wafer recycling process along with a lightweight,thermoformed plastic,truncated mini-compound parabolic concentrator that avoids the need for active solar tracking.Using solar cell/concentrator assemblies whose orientations are adjusted only a few times per year,the annual energy harvesting is increased by 2.8 times compared with planar solar cells without solar tracking.These results represent a potentially drastic cost reduction in both the module and the balance of system costs compared with heavy,rigid conventional modules and trackers that are subject to wind loading damage and high installation costs.
基金supported by the National Key Research and Development Program of China(2017YFE0131500)the National Natural Science Foundation of China(62104204 and U21A20493)。
基金Key-Area Research and Development Program of Guangdong Province(Nos.2020B010172001,2020B010174004)GDAS’Project of Science and Technology Development(No.2018GDASCX-0112)+3 种基金Science and Technology Program of Guangzhou(No.2019050001)National Key Research and Development Program of China(No.2017YFB0404100)National Natural Science Foundation of China(Grant No.11804103)Guangdong Natural Science Foundation for Distinguished Young Scholars(Grant No.2018B030306048).
文摘High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is required.Herein,a large-sized(>2 cm^(2))of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique.The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas(2DEG)and phonons.The saturation current of the flexible HEMT is enhanced by 3.15%under the 0.547%tensile condition,and the thermal degradation of the HEMT was also obviously suppressed under compressive straining.The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism.This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs,but also demonstrates a low-cost method to optimize its electronic and thermal properties.
基金supported by the Guangdong Innovative Research Team Program(No.2009010044)the China Postdoctoral Science Foundation(No.2014M562233)+1 种基金the National Natural Science Foundation of Guangdong,China(No.2015A030312011)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(No.IOSKL2014KF17)
文摘A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template.
