ITO films with thicknesses (134+8) nm, grown on glass substrates by sputtering method, were post-annealed at the temperatures of 100, 200, 300 and 400°C for 1 h, respectively. The as-deposited ITO film was amorph...ITO films with thicknesses (134+8) nm, grown on glass substrates by sputtering method, were post-annealed at the temperatures of 100, 200, 300 and 400°C for 1 h, respectively. The as-deposited ITO film was amorphous, but crystallized with annealing at elevated temperatures, as demonstrated by X-ray diffraction. The transmittance spectra of all samples were obtained and subsequently simulated by means of spectroscopic ellipsometry. The optical constants n and k of the films were extracted. With the annealing temperature increasing, the optical constants n and k of the films firstly decreased then increased in the whole investigated wavelength range. The optical band gaps of all films were evaluated and they varied between 3.74 and 3.93 eV.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 50872001)the Research Fund for the Doctoral Program of Higher Education of China (Grant No.20060357003)+1 种基金the Higher Educational Natural Science Foundation of Anhui Province (Grant No. KJ2008B015)the Open Foundation of Anhui Key Laboratory of Information Materials and Devices, and Key Project of Anhui Province (Grant No. 05021028)
文摘ITO films with thicknesses (134+8) nm, grown on glass substrates by sputtering method, were post-annealed at the temperatures of 100, 200, 300 and 400°C for 1 h, respectively. The as-deposited ITO film was amorphous, but crystallized with annealing at elevated temperatures, as demonstrated by X-ray diffraction. The transmittance spectra of all samples were obtained and subsequently simulated by means of spectroscopic ellipsometry. The optical constants n and k of the films were extracted. With the annealing temperature increasing, the optical constants n and k of the films firstly decreased then increased in the whole investigated wavelength range. The optical band gaps of all films were evaluated and they varied between 3.74 and 3.93 eV.
