Impacts of effective oxide thickness on a symmetric double-gate MOSFET with 9-nm gate length are studied, using full quantum simulation. The simulations are based on a self-consistent solution of the two-dimensional ...Impacts of effective oxide thickness on a symmetric double-gate MOSFET with 9-nm gate length are studied, using full quantum simulation. The simulations are based on a self-consistent solution of the two-dimensional （2D） Poisson equation and the Schr6dinger equation within the non-equilibrium Green＇s function formalism. Oxide thickness and gate dielectric are investigated in terms of drain current, on-off current ratio, off current, sub-threshold swing, drain induced barrier lowering, transconductance, drain conductance, and voltage. Simulation results illustrate that we can improve the device performance by proper selection of the effective oxide thickness.展开更多
We present a first-principles study of the structural,dielectric,and lattice dynamical properties for chalcopyrite semiconductor ZnSnP2.The structural properties are calculated using a plane-wave pseudopotential metho...We present a first-principles study of the structural,dielectric,and lattice dynamical properties for chalcopyrite semiconductor ZnSnP2.The structural properties are calculated using a plane-wave pseudopotential method of densityfunctional theory.A linear response theory is used to derive Born effective charge tensors for each atom,dielectric constants in low and high frequency limits,and phonon frequencies.We calculate all zone-center phonon modes,identify Raman and infrared active modes,and report LO-TO splitting of the infrared modes.The results show an excellent agreement with experiment and propose several predictive behaviors.展开更多
A new glass system （Bi2O3）50（Fe2O3）10（Li2O）x（K2O）40-x, where x changes in steps of 5 mole fraction between 0 and 40, was selected to study the electrical relaxation and the mixed alkali effect （MAE） phenomen...A new glass system （Bi2O3）50（Fe2O3）10（Li2O）x（K2O）40-x, where x changes in steps of 5 mole fraction between 0 and 40, was selected to study the electrical relaxation and the mixed alkali effect （MAE） phenomena. Measurements of ac conductivity σac, dielectric permittivity ε′ and loss factor tanδ in the frequency range of 0.12～10^2 kHz and in the temperature range of 300～650 K were carried out. The temperature dependence of the ac conductivity shows a slow increasing rate at low temperature and high frequency and a rapid increase at high temperature and low frequency. At constant temperature, the ac conductivity is found to be proportional to ω^8, where s is the frequency exponent, which is less than 1. Analysis of the conductivity data and the frequency exponent shows that the overlapping large polaron tunnelling （OLPT） model of ions is the most favorable mechanism for the ac conduction in the present glass system. The ac response, the dc conductivity and dielectric relaxation have the same activation energy and they originate from the same basic transport mechanism. The results of the dielectric permittivity show no maximum peak in the temperature and frequency range studied. This absence of maximum peak is an indication of non-ferroelectric behavior of all the studied samples. The MAE has been detected in the ac conductivity, which is the same as the classical MAE in the dc conductivity. The electrical parameters such as dielectric permittivity ε′ and real dielectric modulus M′ show a typical minimum deviation from linearity by about two orders of magnitude. The loss factor tanδ and the imaginary dielectric modulus M″ are insignificantly dependent on composition even at the same transition temperature Tg.展开更多
文摘Impacts of effective oxide thickness on a symmetric double-gate MOSFET with 9-nm gate length are studied, using full quantum simulation. The simulations are based on a self-consistent solution of the two-dimensional （2D） Poisson equation and the Schr6dinger equation within the non-equilibrium Green＇s function formalism. Oxide thickness and gate dielectric are investigated in terms of drain current, on-off current ratio, off current, sub-threshold swing, drain induced barrier lowering, transconductance, drain conductance, and voltage. Simulation results illustrate that we can improve the device performance by proper selection of the effective oxide thickness.
基金Project supported by the Open Research Fund of Computational Physics Key Laboratory of Sichuan Province,Yibin University(Grant No.JSWL2014KFZ01)the Scientific Research Fund of Sichuan Provincial Education Department,China(Grant No.16ZB0209)+1 种基金the Scientific Research Foundation of Chengdu University of Information Technology,China(Grant No.J201611)the National Natural Science Foundation of China(Grant No.11547224)
文摘We present a first-principles study of the structural,dielectric,and lattice dynamical properties for chalcopyrite semiconductor ZnSnP2.The structural properties are calculated using a plane-wave pseudopotential method of densityfunctional theory.A linear response theory is used to derive Born effective charge tensors for each atom,dielectric constants in low and high frequency limits,and phonon frequencies.We calculate all zone-center phonon modes,identify Raman and infrared active modes,and report LO-TO splitting of the infrared modes.The results show an excellent agreement with experiment and propose several predictive behaviors.
文摘A new glass system （Bi2O3）50（Fe2O3）10（Li2O）x（K2O）40-x, where x changes in steps of 5 mole fraction between 0 and 40, was selected to study the electrical relaxation and the mixed alkali effect （MAE） phenomena. Measurements of ac conductivity σac, dielectric permittivity ε′ and loss factor tanδ in the frequency range of 0.12～10^2 kHz and in the temperature range of 300～650 K were carried out. The temperature dependence of the ac conductivity shows a slow increasing rate at low temperature and high frequency and a rapid increase at high temperature and low frequency. At constant temperature, the ac conductivity is found to be proportional to ω^8, where s is the frequency exponent, which is less than 1. Analysis of the conductivity data and the frequency exponent shows that the overlapping large polaron tunnelling （OLPT） model of ions is the most favorable mechanism for the ac conduction in the present glass system. The ac response, the dc conductivity and dielectric relaxation have the same activation energy and they originate from the same basic transport mechanism. The results of the dielectric permittivity show no maximum peak in the temperature and frequency range studied. This absence of maximum peak is an indication of non-ferroelectric behavior of all the studied samples. The MAE has been detected in the ac conductivity, which is the same as the classical MAE in the dc conductivity. The electrical parameters such as dielectric permittivity ε′ and real dielectric modulus M′ show a typical minimum deviation from linearity by about two orders of magnitude. The loss factor tanδ and the imaginary dielectric modulus M″ are insignificantly dependent on composition even at the same transition temperature Tg.
