We report the ferromagnetism with Cure temperature Tcat 230 K in a new diluted magnetic semiconductor(DMS)(Ba0.7K0.3)(Zn0.85Mn0.15)2As2isostructural to ferropnictide 122 superconductors synthesized via low temperature...We report the ferromagnetism with Cure temperature Tcat 230 K in a new diluted magnetic semiconductor(DMS)(Ba0.7K0.3)(Zn0.85Mn0.15)2As2isostructural to ferropnictide 122 superconductors synthesized via low temperature sintering.Spin is doped by isovalence substitution of Mn2+for Zn2+,while charge is introduced by heterovalence substitution of K1+for Ba2+in(Ba0.7K0.3)(Zn0.85Mn0.15)2As2DMS,being different from(Ga,Mn)As where both spin&charge are induced simultaneously by heterovalence substation of Mn2+for Ga3+.The(Ba0.7K0.3)(Zn0.85Mn0.15)2As2DMS shows spontaneous magnetization following T3/2dependence expected for a homogeneous ferromagnet with saturation moment 1.0μB for each Mn atom.展开更多
We have observed room temperature ferromagnetism in Mn-doped and (Fe, Mn)-codoped ZnO thin films grown under different oxygen partial pressures by pulsed laser deposition. The X-ray diffraction and optical transmissio...We have observed room temperature ferromagnetism in Mn-doped and (Fe, Mn)-codoped ZnO thin films grown under different oxygen partial pressures by pulsed laser deposition. The X-ray diffraction and optical transmission spectra studies demonstrate the natural incorporation of Fe and Mn cations into wurtzite ZnO lattices. The effects of transition metal doping and defects on the magnetic properties was investigated. It is found that room temperature ferromagnetism is sensitive to oxygen vacancy and Zn vacancy. The absence of ferromagnetism in pure ZnO films grown under different oxygen partial pressures reveals that the transition metal ions should also play an important role in inducing the ferromagnetism.展开更多
Diluted magnetic semiconductors (DMSs) that possess both properties of semiconductors and ferromagnetism, have attracted a lot of attentions due to its potential applications for spin-sensitive electronic devices. Rec...Diluted magnetic semiconductors (DMSs) that possess both properties of semiconductors and ferromagnetism, have attracted a lot of attentions due to its potential applications for spin-sensitive electronic devices. Recently, a series of bulk form DMSs isostructural to iron-based superconductors have been reported, which can be readily investigated by microscopic experimental techniques such as nuclear magnetic resonance (NMR) and muon spin rotation (μSR). The measurements have demonstrated that homogeneous ferromagnetism is achieved in these DMSs. In this review article, we summarize experimental evidences from both NMR and μSR measurements. NMR results have shown that carriers facilitate the interactions between distant Mn atoms, while μSR results indicate that these bulk form DMSs and (Ga,Mn)As share a common mechanism for the ferromagnetic exchange interactions.展开更多
As one branch of spintronics, diluted magnetic semiconductors (DMSs) are extensively investigated due to their fundamental significance and potential application in modern information society. The classical materials ...As one branch of spintronics, diluted magnetic semiconductors (DMSs) are extensively investigated due to their fundamental significance and potential application in modern information society. The classical materials (Ga,Mn)As of III-V group based DMSs has been well studied for its high compatibility with the high-mobility semiconductor GaAs. But the Curie temperature in (Ga,Mn)As film is still far below room temperature because the spin & charge doping is bundled to the same element that makes the fabrication very difficult. Alternatively, the discovery of a new generation DMSs with independent spin and charge doping, such as (Ba,K)(Zn,Mn)2As2 (briefly named BZA), attracted considerable attention due to their unique advantages in physical properties and heterojunction fabrication. In this review we focus on this series of new DMSs including (I) materials in terms of three types of new DMSs, i.e. the "111","122" and "1111" system;(II) the physical properties of BZA;(III) single crystals & prototype device based on BZA. The prospective of new type of DMSs with independent spin and charge doping is briefly discussed.展开更多
The electronic and optical properties of zincblende ZnX（X=S, Se, Te） and ZnX：Co are studied from density functional theory （DFT） based first principles calculations. The local crystal structure changes around the...The electronic and optical properties of zincblende ZnX（X=S, Se, Te） and ZnX：Co are studied from density functional theory （DFT） based first principles calculations. The local crystal structure changes around the Co atoms in the lattice are studied after Co atoms are doped. It is shown that the Co-doped materials have smaller lattice constant （about 0.6%-0.9%）. This is mainly due to the shortened Co-X bond length. The （partial） density of states （DOS） is calculated and differences between the pure and doped materials are studied. Results show that for the Co-doped materials, the valence bands are moving upward due to the existence of Co 3d electron states while the conductance bands are moving downward due to the reduced lattice constants. This results in the narrowed band gap of the doped materials. The complex dielectric indices and the absorption coefficients are calculated to examine the influences of the Co atoms on the optical properties. Results show that for the Co-doped materials, the absorption peaks in the high wavelength region are not as sharp and distinct as the undoped materials, and the absorption ranges are extended to even higher wavelength region.展开更多
Phase diagrams of the RE （rare earth）-Ⅳ-Ⅵ systems are very important for the design of rare earth doped diluted magnetic semiconductors （DMSs）, but related information is very limited. In this work, the phase eq...Phase diagrams of the RE （rare earth）-Ⅳ-Ⅵ systems are very important for the design of rare earth doped diluted magnetic semiconductors （DMSs）, but related information is very limited. In this work, the phase equilibria of the Er-Sn-Te system in whole compositional range at room temperature were investigated mainly by means of X-ray powder diffraction （XRD） and differential thermal analysis （DTA）. The existences of 9 binary compounds, i.e., SnTe, ErTe3, EraTe3, ErTe, ErsSn3, Er11Sn10, ErSn2, Er3Sn7 and Er2Sn5 were confirmed. The phase diagram consisted of 12 single-phase regions, 21 binary phase regions and 10 ternary phase re- gions. The maximum solid solubility of Er in SnTe was determined to be about 7.5 at.%, none of the other phases in this system re- vealed a remarkable homogeneity range at room temperature. No ternary compound was found in this work.展开更多
基金supported by the National Natural Science Foundation of Chinathe Ministry of Science and Technology (MOST) of China
文摘We report the ferromagnetism with Cure temperature Tcat 230 K in a new diluted magnetic semiconductor(DMS)(Ba0.7K0.3)(Zn0.85Mn0.15)2As2isostructural to ferropnictide 122 superconductors synthesized via low temperature sintering.Spin is doped by isovalence substitution of Mn2+for Zn2+,while charge is introduced by heterovalence substitution of K1+for Ba2+in(Ba0.7K0.3)(Zn0.85Mn0.15)2As2DMS,being different from(Ga,Mn)As where both spin&charge are induced simultaneously by heterovalence substation of Mn2+for Ga3+.The(Ba0.7K0.3)(Zn0.85Mn0.15)2As2DMS shows spontaneous magnetization following T3/2dependence expected for a homogeneous ferromagnet with saturation moment 1.0μB for each Mn atom.
基金financially supported by the National Natural Foundation of China (Nos. 50831002, 50971025,11174031, 51071022)Program for Changjiang Scholars and Innovative Research Team in University, Beijing NovaProgram (No. 2011031)+1 种基金Beijing Natural Science Foundation (No. 2102032)the National Basic Research Program of China (No. 2012CB932702)
文摘We have observed room temperature ferromagnetism in Mn-doped and (Fe, Mn)-codoped ZnO thin films grown under different oxygen partial pressures by pulsed laser deposition. The X-ray diffraction and optical transmission spectra studies demonstrate the natural incorporation of Fe and Mn cations into wurtzite ZnO lattices. The effects of transition metal doping and defects on the magnetic properties was investigated. It is found that room temperature ferromagnetism is sensitive to oxygen vacancy and Zn vacancy. The absence of ferromagnetism in pure ZnO films grown under different oxygen partial pressures reveals that the transition metal ions should also play an important role in inducing the ferromagnetism.
基金supported by MOST (No. 2016YFA0300402)NSF of China (No. 11574265)the Fundamental Research Funds for the Central Universities
文摘Diluted magnetic semiconductors (DMSs) that possess both properties of semiconductors and ferromagnetism, have attracted a lot of attentions due to its potential applications for spin-sensitive electronic devices. Recently, a series of bulk form DMSs isostructural to iron-based superconductors have been reported, which can be readily investigated by microscopic experimental techniques such as nuclear magnetic resonance (NMR) and muon spin rotation (μSR). The measurements have demonstrated that homogeneous ferromagnetism is achieved in these DMSs. In this review article, we summarize experimental evidences from both NMR and μSR measurements. NMR results have shown that carriers facilitate the interactions between distant Mn atoms, while μSR results indicate that these bulk form DMSs and (Ga,Mn)As share a common mechanism for the ferromagnetic exchange interactions.
基金financially supported by Ministry of Science and Technology of China (Nos. 2018YFA03057001, and 2017YFB0405703)National Natural Science Foundation of China through the research projects (No. 11534016)
文摘As one branch of spintronics, diluted magnetic semiconductors (DMSs) are extensively investigated due to their fundamental significance and potential application in modern information society. The classical materials (Ga,Mn)As of III-V group based DMSs has been well studied for its high compatibility with the high-mobility semiconductor GaAs. But the Curie temperature in (Ga,Mn)As film is still far below room temperature because the spin & charge doping is bundled to the same element that makes the fabrication very difficult. Alternatively, the discovery of a new generation DMSs with independent spin and charge doping, such as (Ba,K)(Zn,Mn)2As2 (briefly named BZA), attracted considerable attention due to their unique advantages in physical properties and heterojunction fabrication. In this review we focus on this series of new DMSs including (I) materials in terms of three types of new DMSs, i.e. the "111","122" and "1111" system;(II) the physical properties of BZA;(III) single crystals & prototype device based on BZA. The prospective of new type of DMSs with independent spin and charge doping is briefly discussed.
基金Project supported by the National Natural Science Foundation of China （Grant No 10564002） and the 0pen Foundations of Key Laboratory for 0pto-electronics of Jiangxi Province, China （Grant Nos 2004003 and 2004008）, the Natural Science Foundation of Jiangxi Province, China （Grant No 0512017） and the Youth Science Program of Jiangxi Normal University, China（Grant No 1075）.
文摘The electronic and optical properties of zincblende ZnX（X=S, Se, Te） and ZnX：Co are studied from density functional theory （DFT） based first principles calculations. The local crystal structure changes around the Co atoms in the lattice are studied after Co atoms are doped. It is shown that the Co-doped materials have smaller lattice constant （about 0.6%-0.9%）. This is mainly due to the shortened Co-X bond length. The （partial） density of states （DOS） is calculated and differences between the pure and doped materials are studied. Results show that for the Co-doped materials, the valence bands are moving upward due to the existence of Co 3d electron states while the conductance bands are moving downward due to the reduced lattice constants. This results in the narrowed band gap of the doped materials. The complex dielectric indices and the absorption coefficients are calculated to examine the influences of the Co atoms on the optical properties. Results show that for the Co-doped materials, the absorption peaks in the high wavelength region are not as sharp and distinct as the undoped materials, and the absorption ranges are extended to even higher wavelength region.
基金supported by the Guangxi Science and Technology Development Project (11107003-1)National Natural Science Foundation of China (50601006, 51161002)
文摘Phase diagrams of the RE （rare earth）-Ⅳ-Ⅵ systems are very important for the design of rare earth doped diluted magnetic semiconductors （DMSs）, but related information is very limited. In this work, the phase equilibria of the Er-Sn-Te system in whole compositional range at room temperature were investigated mainly by means of X-ray powder diffraction （XRD） and differential thermal analysis （DTA）. The existences of 9 binary compounds, i.e., SnTe, ErTe3, EraTe3, ErTe, ErsSn3, Er11Sn10, ErSn2, Er3Sn7 and Er2Sn5 were confirmed. The phase diagram consisted of 12 single-phase regions, 21 binary phase regions and 10 ternary phase re- gions. The maximum solid solubility of Er in SnTe was determined to be about 7.5 at.%, none of the other phases in this system re- vealed a remarkable homogeneity range at room temperature. No ternary compound was found in this work.
