The rapid development of superconducting nanowire single-photon detectors over the past decade has led to numerous advances in quantum information technology. The record for the best system detection efficiency at an ...The rapid development of superconducting nanowire single-photon detectors over the past decade has led to numerous advances in quantum information technology. The record for the best system detection efficiency at an incident photon wavelength of 1550 nm is 93%. This performance was attained from a superconducting nanowire single-photon detector made of amorphous WSi; such detectors are usually operated at sub-Kelvin temperatures. In this study, we first demonstrate superconducting nanowire single-photon detectors made of polycrystalline NbN with system detection efficiency of 90.2% for 1550-nm-wavelength photons at2.1 K, accessible with a compact cryocooler. The system detection efficiency saturated at 92.1% when the temperature was lowered to 1.8 K. We expect the results lighten the practical and high performance superconducting nanowire single-photon detectors to quantum information and other high-end applications.展开更多
4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high qu...4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.展开更多
Silicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key chal- ...Silicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key chal- lenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-per- formance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p-i-n photo- diodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electron- icSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging tech- nologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss re- cent progress towards efficient monolithic Ge las展开更多
Sensitive mid-infrared(MIR)detection is in high demand in various applications,ranging from remote sensing,infrared surveillance,and environmental monitoring to industrial inspection.Among others,upconversion infrared...Sensitive mid-infrared(MIR)detection is in high demand in various applications,ranging from remote sensing,infrared surveillance,and environmental monitoring to industrial inspection.Among others,upconversion infrared detectors have recently attracted increasing attention due to their advantageous features of high sensitivity,fast response,and room-temperature operation.However,it remains challenging to realize high-performance passive MIR sensing due to the stringent requirement of high-power continuouswave pumping.Here,we propose and implement a high-efficiency and low-noise MIR upconversion detection system based on pumping enhancement via a low-loss optical cavity.Specifically,a singlelongitudinal-mode pump at 1064 nm is significantly enhanced by a factor of 36,thus allowing for a peak conversion efficiency of up to 22%at an intracavity average power of 55 W.The corresponding noise equivalent power is achieved as low as 0.3 fW∕Hz^(1∕2),which indicates at least a 10-fold improvement over previous results.Notably,the involved single-frequency pumping would facilitate high-fidelity spectral mapping,which is particularly attractive for high-precision MIR upconversion spectroscopy in photonstarved scenarios.展开更多
The influence of the single photon laser altimeter range-gate width on the detection probability and ranging accuracy is discussed and analyzed,according to the LiDAR equation,single photon detection equation and the ...The influence of the single photon laser altimeter range-gate width on the detection probability and ranging accuracy is discussed and analyzed,according to the LiDAR equation,single photon detection equation and the Monte Carlo method to simulate the experiment.The simulated results show that the probability of detection is not affected by the range gate,while the probability of false alarm is relative to the gate width.When the gate width is 100 ns,the ranging accuracy can accord with the requirements of satellite laser altimeter.But when the range gate width exceeds 400 ns,ranging accuracy will decline sharply.The noise ratio will be more as long as the range gate to get larger,so the refined filtering algorithm during the data processing is important to extract the useful photons effectively.In order to ensure repeated observation of the same point for 25 times,we deduce the quantitative relation between the footprint size,footprint,and frequency repetition according to the parameters of ICESat-2.The related conclusions can provide some references for the design and the development of the domestic single photon laser altimetry satellite.展开更多
We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength. In this method, the raw single photo...We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength. In this method, the raw single photon avalanche signals are not attenuated, thus a high signal-to-noise ratio can be obtained compared with the existing results. The performance of the scheme is investigated and the ratio of the dark count rate to the detection efficiency is obtained to be 1.3×10^-4 at 213 K.展开更多
Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche d...Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.展开更多
We study the spectrum of single-photon emission and scattering in a mixed optomechanical model which consists of both linear and quadratic optomechanical interactions.The spectra are calculated based on the exact long...We study the spectrum of single-photon emission and scattering in a mixed optomechanical model which consists of both linear and quadratic optomechanical interactions.The spectra are calculated based on the exact longtime solutions of the single-photon emission and scattering processes in this system.We find that there exist some phonon sideband peaks in the spectra and there are some sub peaks around the phonon sideband peaks under proper parameter conditions.The correspondence between the spectral features and the optomechanical interactions is confirmed, and the optomechanical coupling strengths can be inferred by analyzing the resonance peaks and dips in the spectra.展开更多
基金supported by the National Key R&D Program of China(Grant No.2017YFA0304000)Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB04010200)+1 种基金the National Natural Science Foundation of China(Grant Nos.91121022,61401441,and61401443)the Science and Technology Commission of Shanghai Municipality(Grant No.16JC1400402)
文摘The rapid development of superconducting nanowire single-photon detectors over the past decade has led to numerous advances in quantum information technology. The record for the best system detection efficiency at an incident photon wavelength of 1550 nm is 93%. This performance was attained from a superconducting nanowire single-photon detector made of amorphous WSi; such detectors are usually operated at sub-Kelvin temperatures. In this study, we first demonstrate superconducting nanowire single-photon detectors made of polycrystalline NbN with system detection efficiency of 90.2% for 1550-nm-wavelength photons at2.1 K, accessible with a compact cryocooler. The system detection efficiency saturated at 92.1% when the temperature was lowered to 1.8 K. We expect the results lighten the practical and high performance superconducting nanowire single-photon detectors to quantum information and other high-end applications.
基金supported in part by National Key R&D Program of China under Grant No. 2016YFB0400902in part by the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.
文摘Silicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key chal- lenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-per- formance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p-i-n photo- diodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electron- icSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging tech- nologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss re- cent progress towards efficient monolithic Ge las
基金supported by the National Key Research and Development Program(Grant No.2021YFB2801100)the National Natural Science Foundation of China(Grant Nos.62175064,62235019,62035005,and 12022411)+3 种基金the Shanghai Pilot Program for Basic Research(Grant No.TQ20220104)the Natural Science Foundation of Chongqing(Grant Nos.CSTB2023NSCQ-JQX0011,CSTB2022NSCQ-MSX0451,and CSTB2022NSCQ-JQX0016)the Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01)the Fundamental Research Funds for the Central Universities.
文摘Sensitive mid-infrared(MIR)detection is in high demand in various applications,ranging from remote sensing,infrared surveillance,and environmental monitoring to industrial inspection.Among others,upconversion infrared detectors have recently attracted increasing attention due to their advantageous features of high sensitivity,fast response,and room-temperature operation.However,it remains challenging to realize high-performance passive MIR sensing due to the stringent requirement of high-power continuouswave pumping.Here,we propose and implement a high-efficiency and low-noise MIR upconversion detection system based on pumping enhancement via a low-loss optical cavity.Specifically,a singlelongitudinal-mode pump at 1064 nm is significantly enhanced by a factor of 36,thus allowing for a peak conversion efficiency of up to 22%at an intracavity average power of 55 W.The corresponding noise equivalent power is achieved as low as 0.3 fW∕Hz^(1∕2),which indicates at least a 10-fold improvement over previous results.Notably,the involved single-frequency pumping would facilitate high-fidelity spectral mapping,which is particularly attractive for high-precision MIR upconversion spectroscopy in photonstarved scenarios.
基金National Natural Science Foundation of China(No.41871382)Open Foundation of the Key Laboratory of Space Active Opto-electronics Technologyand Chinese Academy of Sciences(No.2018-ZDKF-1)。
文摘The influence of the single photon laser altimeter range-gate width on the detection probability and ranging accuracy is discussed and analyzed,according to the LiDAR equation,single photon detection equation and the Monte Carlo method to simulate the experiment.The simulated results show that the probability of detection is not affected by the range gate,while the probability of false alarm is relative to the gate width.When the gate width is 100 ns,the ranging accuracy can accord with the requirements of satellite laser altimeter.But when the range gate width exceeds 400 ns,ranging accuracy will decline sharply.The noise ratio will be more as long as the range gate to get larger,so the refined filtering algorithm during the data processing is important to extract the useful photons effectively.In order to ensure repeated observation of the same point for 25 times,we deduce the quantitative relation between the footprint size,footprint,and frequency repetition according to the parameters of ICESat-2.The related conclusions can provide some references for the design and the development of the domestic single photon laser altimetry satellite.
基金Project supported by the National Major Fundamental Research Program of China(Grant No.2006CB921900)the Knowledge Innovation Project of the Chinese Academy of Sciences,and the National Natural Science Foundation of China(Grant Nos.60537020 and 60121503)
文摘We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength. In this method, the raw single photon avalanche signals are not attenuated, thus a high signal-to-noise ratio can be obtained compared with the existing results. The performance of the scheme is investigated and the ratio of the dark count rate to the detection efficiency is obtained to be 1.3×10^-4 at 213 K.
文摘Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.
基金Supported by the National Natural Science Foundation of China under Grant Nos.11505055,11822501,11774087Natural Science Foundation of Hunan Province China under Grant No.2017JJ1021Scientific Research Fund of Hunan Provincial Education Department under Grant No.18A007
文摘We study the spectrum of single-photon emission and scattering in a mixed optomechanical model which consists of both linear and quadratic optomechanical interactions.The spectra are calculated based on the exact longtime solutions of the single-photon emission and scattering processes in this system.We find that there exist some phonon sideband peaks in the spectra and there are some sub peaks around the phonon sideband peaks under proper parameter conditions.The correspondence between the spectral features and the optomechanical interactions is confirmed, and the optomechanical coupling strengths can be inferred by analyzing the resonance peaks and dips in the spectra.
