The ac conduction mechanism in copper oxide nanoparticles with 8 nm size, synthesized by a precipitation method was studied by analyzing ac conductivity in the frequency range of 50 Hz-1 MHz and in the temperature ran...The ac conduction mechanism in copper oxide nanoparticles with 8 nm size, synthesized by a precipitation method was studied by analyzing ac conductivity in the frequency range of 50 Hz-1 MHz and in the temperature range of 373-573 K. X-ray diffraction and transmission electron microscopy （TEM） were employed for the structural and morphological characterization of CuO nanoparticles. The experimental and theoretical in- vestigations suggested that the ac conduction mechanism in CuO nanoparticles can be successfully explained by a correlated barrier hopping model, which provided reasonable values for the maximum barrier height and characteristic relaxation time. It was also found that bipolaron hopping become prominent up to a particular temperature and beyond that single polaron hopping predominates. Physical parameters such as hopping distance and density of defect states were also calculated. Photoluminescence studies confirm the presence of a surface defect in CuO nanoparticles.展开更多
Spinel solid solutions of CuFe2O4 and Cu1-xZnxGa0.1Fe1.9O4 with (0.0≤x≤0.5) are synthesized. Crystallographic phase transformation from tetragonal-to-cubic occurred at x=0.2. The derived structural parameters manife...Spinel solid solutions of CuFe2O4 and Cu1-xZnxGa0.1Fe1.9O4 with (0.0≤x≤0.5) are synthesized. Crystallographic phase transformation from tetragonal-to-cubic occurred at x=0.2. The derived structural parameters manifest that Zn occupies the tetrahedral A-site while Cu and Ga occupy the octahedral B-site and Fe distributes among A-and B-sites. Electrical conductivity measurements of these materials as a function of temperature and frequency revealed semiconducting behavior except CuFe2O4 sample,which has a metallic behavior at low frequency and at high frequency,metallic-to-semiconductor transition occurred as temperature increases. The metallic behavior in this sample is attributed to cation-cation interactions at B-site while,the semiconductor behavior in Cu1-xZnxGa0.1Fe1.9O4 compounds is due to the cation-anion-cation interactions at the same site in the spinel lattice. All compositions exhibit transition with change in the slope of conductivity versus temperature curve. This transition temperature (Tc) decreases linearly with increasing Zn content x. The relation of the universal exponent s with temperature gives evidence that over large polaron OLP and correlated barrier hopping CBH conduction mechanisms are presented in CuFe2O4 and Cu1-xZnxGa0.1Fe1.9O4 compounds respectively.展开更多
The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-（3-phenoxyphenyl）-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile（Ph-HPQ） and 2-amino-4-（2-chlorophenyl）-6-ethyl-5-oxo-...The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-（3-phenoxyphenyl）-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile（Ph-HPQ） and 2-amino-4-（2-chlorophenyl）-6-ethyl-5-oxo-5,6-dihydro-4H-pyrano [3, 2-c] quinoline-3-carbonitrile（Ch-HPQ） thin films were determined in the frequency range of 0.5 k Hz–5 MHz and the temperature range of 290–443 K. The AC electrical conduction of both compounds in thin film form is governed by the correlated barrier hopping（CBH） mechanism. Some parameters such as the barrier height, the maximum barrier height, the density of charges, and the hopping distance were determined as functions of temperature and frequency. The phenoxyphenyl group has a greater influence on those parameters than the chlorophenyl group. The AC activation energies were determined at different frequencies and temperatures. The dielectric behaviors of Ph-HPQ and Ch-HPQ were investigated using the impedance spectroscopy technique. The impedance data are presented in Nyquist diagrams for different temperatures. The Ch-HPQ films have higher impedance than the Ph-HPQ films. The real dielectric constant and dielectric loss show a remarkable dependence on the frequency and temperature. The Ph-HPQ has higher dielectric constants than the Ch-HPQ.展开更多
基金financial support of Kerala State Council for Science, Technology and Environment (KSCSTE)
文摘The ac conduction mechanism in copper oxide nanoparticles with 8 nm size, synthesized by a precipitation method was studied by analyzing ac conductivity in the frequency range of 50 Hz-1 MHz and in the temperature range of 373-573 K. X-ray diffraction and transmission electron microscopy （TEM） were employed for the structural and morphological characterization of CuO nanoparticles. The experimental and theoretical in- vestigations suggested that the ac conduction mechanism in CuO nanoparticles can be successfully explained by a correlated barrier hopping model, which provided reasonable values for the maximum barrier height and characteristic relaxation time. It was also found that bipolaron hopping become prominent up to a particular temperature and beyond that single polaron hopping predominates. Physical parameters such as hopping distance and density of defect states were also calculated. Photoluminescence studies confirm the presence of a surface defect in CuO nanoparticles.
文摘Spinel solid solutions of CuFe2O4 and Cu1-xZnxGa0.1Fe1.9O4 with (0.0≤x≤0.5) are synthesized. Crystallographic phase transformation from tetragonal-to-cubic occurred at x=0.2. The derived structural parameters manifest that Zn occupies the tetrahedral A-site while Cu and Ga occupy the octahedral B-site and Fe distributes among A-and B-sites. Electrical conductivity measurements of these materials as a function of temperature and frequency revealed semiconducting behavior except CuFe2O4 sample,which has a metallic behavior at low frequency and at high frequency,metallic-to-semiconductor transition occurred as temperature increases. The metallic behavior in this sample is attributed to cation-cation interactions at B-site while,the semiconductor behavior in Cu1-xZnxGa0.1Fe1.9O4 compounds is due to the cation-anion-cation interactions at the same site in the spinel lattice. All compositions exhibit transition with change in the slope of conductivity versus temperature curve. This transition temperature (Tc) decreases linearly with increasing Zn content x. The relation of the universal exponent s with temperature gives evidence that over large polaron OLP and correlated barrier hopping CBH conduction mechanisms are presented in CuFe2O4 and Cu1-xZnxGa0.1Fe1.9O4 compounds respectively.
文摘The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-（3-phenoxyphenyl）-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile（Ph-HPQ） and 2-amino-4-（2-chlorophenyl）-6-ethyl-5-oxo-5,6-dihydro-4H-pyrano [3, 2-c] quinoline-3-carbonitrile（Ch-HPQ） thin films were determined in the frequency range of 0.5 k Hz–5 MHz and the temperature range of 290–443 K. The AC electrical conduction of both compounds in thin film form is governed by the correlated barrier hopping（CBH） mechanism. Some parameters such as the barrier height, the maximum barrier height, the density of charges, and the hopping distance were determined as functions of temperature and frequency. The phenoxyphenyl group has a greater influence on those parameters than the chlorophenyl group. The AC activation energies were determined at different frequencies and temperatures. The dielectric behaviors of Ph-HPQ and Ch-HPQ were investigated using the impedance spectroscopy technique. The impedance data are presented in Nyquist diagrams for different temperatures. The Ch-HPQ films have higher impedance than the Ph-HPQ films. The real dielectric constant and dielectric loss show a remarkable dependence on the frequency and temperature. The Ph-HPQ has higher dielectric constants than the Ch-HPQ.
