PANI nanodots array was fabricated in AAO template with potentiostatic method in a short time.The topographic image of PANI nanodots array was characterized by scanning electron microscopy(SEM) and atomic force micros...PANI nanodots array was fabricated in AAO template with potentiostatic method in a short time.The topographic image of PANI nanodots array was characterized by scanning electron microscopy(SEM) and atomic force microscopy(AFM).The I-V characteristics of conducting PANI nanodots array was measured with conducting atomic force microscope(C-AFM) in atmosphere at room temperature.Coulomb staircase phenomena was observed in the I-V curves.展开更多
Small high-quality Au/n type-GaAs Schottky barrier diodes （SBDs） with low reverse leakage current are produced using lithography. Their effective barrier heights （BHs） and ideality factors from current-voltage （...Small high-quality Au/n type-GaAs Schottky barrier diodes （SBDs） with low reverse leakage current are produced using lithography. Their effective barrier heights （BHs） and ideality factors from current-voltage （I-V） characteristics are measured by a Pico ampere meter and home-built I-V instrument. In spite of the identical preparation of the diodes there is a diode-to-diode variation in ideality factor and barrier height parameters. Measurement of topology of a surface of a thin metal film with atomic force microscope （AFM） shows that Au-n type-GaAS SD consists of a set of parallel-connected micro and nanocontacts diodes with sizes approximately in a range of 100-200 nm. Between barrier height and ideality factor there is an inversely proportional dependency. With the diameter of contact increasing from 5 μm up to 200 μm, the barrier height increases from 0.833 up to 0.933 eV and its ideality factor decreases from 1.11 down to 1.006. These dependencies show the reduction of the contribution of the peripheral current with the diameter of contact increasing. We find the effect of series resistance on barrier height and ideality factor.展开更多
We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro...We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope（CAFM）.The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state（LRS） and high resistance state（HRS） can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.展开更多
利用低能H离子对20 Me V W^(6+)预注入和未注入的钨样品进行辐照实验,考察H离子能量(20-520 e V)和辐照温度(673-1073 K)变化对钨表面微结构的影响。采用非破坏性的导电模式原子力显微镜和扫描电镜分析预注入和未注入钨样品的表面形貌...利用低能H离子对20 Me V W^(6+)预注入和未注入的钨样品进行辐照实验,考察H离子能量(20-520 e V)和辐照温度(673-1073 K)变化对钨表面微结构的影响。采用非破坏性的导电模式原子力显微镜和扫描电镜分析预注入和未注入钨样品的表面形貌和内表面缺陷分布情况。结果表明,辐照后的样品表面出现大量的纳米尺寸凸起,高能W^(6+)预注入的样品表面损伤要小于未注入的钨样品,意味着高能离子预注入会对材料的表面损伤起到抑制作用,但是当辐照温度高于1073 K时,这种抑制作用开始减弱。展开更多
Functionalization of silicon substrate surfaces with a stable monolayer for resisting non-specific adsorption of proteins has attracted great interest,since it is directly relevant to the development of miniature,sili...Functionalization of silicon substrate surfaces with a stable monolayer for resisting non-specific adsorption of proteins has attracted great interest,since it is directly relevant to the development of miniature,silicon-based biosensors and implantable microdevices,such as silicon-neuron interfaces.This brief review summarizes our contribution to the development of robust monolayers grown by surface hydrosilylation on atomically flat,hydrogen-terminated silicon surfaces.The review also outlines our strategy and progress on the fabrication of single molecule patterns on such monolayer platforms.展开更多
Small high-quality Au/P-Si Schottky barrier diodes（SBDs） with an extremely low reverse leakage current using wet lithography were produced.Their effective barrier heights（BHs） and ideality factors from current-vol...Small high-quality Au/P-Si Schottky barrier diodes（SBDs） with an extremely low reverse leakage current using wet lithography were produced.Their effective barrier heights（BHs） and ideality factors from current-voltage （Ⅰ-Ⅴ） characteristics were measured by a conducting probe atomic force microscope（C-AFM）.In spite of the identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters.By extrapolating the plots the built in potential of the Au /p-Si contact was obtained as V_（bi）=0.5425 V and the barrier height valueΦ_（b（c-V）） was calculated to beΦ_（B（C-V））=0.7145 V for Au/p-Si.It is found that for the diodes with diameters smaller than 100μm,the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear,where similar to the earlier reported different metal semiconductor diodes in the literature,these parameters for the here manufactured diodes with diameters more than 100μm are also linear.Based on the very obvious sub-nanometer C-AFM produced pictures the scientific evidence behind this controversy is also explained.展开更多
文摘PANI nanodots array was fabricated in AAO template with potentiostatic method in a short time.The topographic image of PANI nanodots array was characterized by scanning electron microscopy(SEM) and atomic force microscopy(AFM).The I-V characteristics of conducting PANI nanodots array was measured with conducting atomic force microscope(C-AFM) in atmosphere at room temperature.Coulomb staircase phenomena was observed in the I-V curves.
文摘Small high-quality Au/n type-GaAs Schottky barrier diodes （SBDs） with low reverse leakage current are produced using lithography. Their effective barrier heights （BHs） and ideality factors from current-voltage （I-V） characteristics are measured by a Pico ampere meter and home-built I-V instrument. In spite of the identical preparation of the diodes there is a diode-to-diode variation in ideality factor and barrier height parameters. Measurement of topology of a surface of a thin metal film with atomic force microscope （AFM） shows that Au-n type-GaAS SD consists of a set of parallel-connected micro and nanocontacts diodes with sizes approximately in a range of 100-200 nm. Between barrier height and ideality factor there is an inversely proportional dependency. With the diameter of contact increasing from 5 μm up to 200 μm, the barrier height increases from 0.833 up to 0.933 eV and its ideality factor decreases from 1.11 down to 1.006. These dependencies show the reduction of the contribution of the peripheral current with the diameter of contact increasing. We find the effect of series resistance on barrier height and ideality factor.
基金Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064)the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61101055,61274113,and 11204212)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029)Tianjin Natural Science Foundation of China (Grant No. 10SYSYJC27700)
文摘We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope（CAFM）.The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state（LRS） and high resistance state（HRS） can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.
文摘利用低能H离子对20 Me V W^(6+)预注入和未注入的钨样品进行辐照实验,考察H离子能量(20-520 e V)和辐照温度(673-1073 K)变化对钨表面微结构的影响。采用非破坏性的导电模式原子力显微镜和扫描电镜分析预注入和未注入钨样品的表面形貌和内表面缺陷分布情况。结果表明,辐照后的样品表面出现大量的纳米尺寸凸起,高能W^(6+)预注入的样品表面损伤要小于未注入的钨样品,意味着高能离子预注入会对材料的表面损伤起到抑制作用,但是当辐照温度高于1073 K时,这种抑制作用开始减弱。
基金supported by the Welch Foundation grant E-1498NSF CAREER Award (CTS-0349228 to CC)+1 种基金grant DMR-0706627NIH R21 HD058985
文摘Functionalization of silicon substrate surfaces with a stable monolayer for resisting non-specific adsorption of proteins has attracted great interest,since it is directly relevant to the development of miniature,silicon-based biosensors and implantable microdevices,such as silicon-neuron interfaces.This brief review summarizes our contribution to the development of robust monolayers grown by surface hydrosilylation on atomically flat,hydrogen-terminated silicon surfaces.The review also outlines our strategy and progress on the fabrication of single molecule patterns on such monolayer platforms.
文摘Small high-quality Au/P-Si Schottky barrier diodes（SBDs） with an extremely low reverse leakage current using wet lithography were produced.Their effective barrier heights（BHs） and ideality factors from current-voltage （Ⅰ-Ⅴ） characteristics were measured by a conducting probe atomic force microscope（C-AFM）.In spite of the identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters.By extrapolating the plots the built in potential of the Au /p-Si contact was obtained as V_（bi）=0.5425 V and the barrier height valueΦ_（b（c-V）） was calculated to beΦ_（B（C-V））=0.7145 V for Au/p-Si.It is found that for the diodes with diameters smaller than 100μm,the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear,where similar to the earlier reported different metal semiconductor diodes in the literature,these parameters for the here manufactured diodes with diameters more than 100μm are also linear.Based on the very obvious sub-nanometer C-AFM produced pictures the scientific evidence behind this controversy is also explained.
