用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件...用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件下 ,于常温下测量了光调制反射光谱 ,发现各单元的子带间跃迁能量最大变化范围可达80 me V .展开更多
In this paper, a magnetooptic chip was prepared on Si wafer by combinatorial Ga+ implantation into ion sputtered Co7Ag93 film. The surface morphology of each unit of the chip was detected by AFM, while their Kerr effe...In this paper, a magnetooptic chip was prepared on Si wafer by combinatorial Ga+ implantation into ion sputtered Co7Ag93 film. The surface morphology of each unit of the chip was detected by AFM, while their Kerr effect was measnred by MOKE equipment. It is observed that the maximum Kerr rotation (MKR) occurs when thc incident photon energy is around 3.8-3.9 eV. Summarization of MKR wer sus implanted Ga+ dose shows that the MKR enhancement by Ga+ implantation can be characterized as incubation, enhancement and saturation regions. Considering the mutual solubility and surface morphology transition after annealing, it is suggested that Ga+ tends to form CoCa and/or CoCa3 intermetallic compounds. Before the formation of CoGa3 compounds, no apparent MKR enhancement could be obserwed. While when the surface is half occupied by forest-like CoCa3 compounds, MKR enhancement will be saturated. By comparison of the maximum Kerr rotation with the cone areal density, it can be induced that not only the bulk concentration and structure, but also the surface morphology plays an important role in magnctooptic Kerr effect.展开更多
文摘用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件下 ,于常温下测量了光调制反射光谱 ,发现各单元的子带间跃迁能量最大变化范围可达80 me V .
基金Supported by National Natural Science Foundation of China (No.19975067 and No.10075074)
文摘In this paper, a magnetooptic chip was prepared on Si wafer by combinatorial Ga+ implantation into ion sputtered Co7Ag93 film. The surface morphology of each unit of the chip was detected by AFM, while their Kerr effect was measnred by MOKE equipment. It is observed that the maximum Kerr rotation (MKR) occurs when thc incident photon energy is around 3.8-3.9 eV. Summarization of MKR wer sus implanted Ga+ dose shows that the MKR enhancement by Ga+ implantation can be characterized as incubation, enhancement and saturation regions. Considering the mutual solubility and surface morphology transition after annealing, it is suggested that Ga+ tends to form CoCa and/or CoCa3 intermetallic compounds. Before the formation of CoGa3 compounds, no apparent MKR enhancement could be obserwed. While when the surface is half occupied by forest-like CoCa3 compounds, MKR enhancement will be saturated. By comparison of the maximum Kerr rotation with the cone areal density, it can be induced that not only the bulk concentration and structure, but also the surface morphology plays an important role in magnctooptic Kerr effect.
