采用化学水浴法制备了ZnS薄膜,并从沉积ZnS薄膜的化学反应原理出发,对其结构和性能进行了综合研究。结果表明:随着沉积时间的增加,ZnS薄膜厚度增加,其光学透过率降低,薄膜的禁带宽度也随之变小,最小值为3.74 e V;而薄膜的粗糙度变化不大...采用化学水浴法制备了ZnS薄膜,并从沉积ZnS薄膜的化学反应原理出发,对其结构和性能进行了综合研究。结果表明:随着沉积时间的增加,ZnS薄膜厚度增加,其光学透过率降低,薄膜的禁带宽度也随之变小,最小值为3.74 e V;而薄膜的粗糙度变化不大,其值在6~9 nm之间。随着反应物浓度的增加,薄膜的光学透过率呈先增加后减小的变化,当反应物浓度过低或过高时,沉积反应都会向同质反应偏移,在薄膜表面生成杂质,导致薄膜不均匀。当沉积时间为120 min,ZnSO_4、SC(NH_2)_2和NH_3·H_2O的浓度分别为0.03、0.4和4.0 mol/L时,沉积的ZnS薄膜呈均匀致密结构,成分为单一ZnS相,其光学透过率在450~900 nm波段高于70%。展开更多
Highly crystalline and transparent CdS films are grown by utilizing the vacuum thermal evaporation （VTE） method. The structural, surface morphological, and optical properties of the films are studied and compared wi...Highly crystalline and transparent CdS films are grown by utilizing the vacuum thermal evaporation （VTE） method. The structural, surface morphological, and optical properties of the films are studied and compared with those prepared by chemical bath deposition （CBD）. It is found that the films deposited at a high substrate temperature （200 ℃） have a preferential orientation along （002） which is consistent with CBD-grown films. Absorption spectra reveal that the films are highly transparent and the optical band gap values are found to be in a range of 2.44 eV-2.56 eV. Culnl_xGaxSe2 （CIGS） solar cells with in-situ VTE-grown CdS films exhibit higher values of Voc together with smaller values of Jsc than those from CBD. Eventually the conversion efficiency and fill factor become slightly better than those from the CBD method. Our work suggests that the in-situ thermal evaporation method can be a competitive alternative to the CBD method, particularly in the physical- and vacuum-based CIGS technology.展开更多
The promising solar material Cadmium Telluride (CdTe) is successfully deposited on both plain glass and ITO coated glass substrates. Many variations in composition of the solution used for deposition of the film are m...The promising solar material Cadmium Telluride (CdTe) is successfully deposited on both plain glass and ITO coated glass substrates. Many variations in composition of the solution used for deposition of the film are made to optimize the deposition conditions. The bandgap calculated from optical transmission studies is found to be a function of the Cd/Te atomic ratio in the film. The atomic ratio in the film is a function of the Cd/Te concentration ratio in the solution used in deposition. Based on several experimental data points an equation involving the Cd/Te atomic ratio in the film and the chemistry of the solution is deduced.展开更多
We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposit...We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposition method. The changes in film thickness as a function of time were monitored. The films were characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FE-SEM), optical measurement techniques and electrical measurement. X-ray diffraction results indicate that all the CuS thin films have an orthorhombic (covellite) structure with preferential orientation along (113) direction. The intensity of the diffraction peaks increases as thickness of the film increases. Uniform deposition having nanocrystalline granular morphology distributed over the entire glass substrate was observed through FE-SEM studies. The crystalline and surface properties of the CuS thin films improved with increase in the film thickness. Transmittance (except for 210 nm thick CuS film) together with band gap values was found to decrease with increase in thickness. I-V measurements under dark and illumination condition show that the CuS thin films give a good photoresponse.展开更多
基金Project supported by the Natural Science Foundation of Shanghai (Grant No.13ZR1428200)
文摘Highly crystalline and transparent CdS films are grown by utilizing the vacuum thermal evaporation （VTE） method. The structural, surface morphological, and optical properties of the films are studied and compared with those prepared by chemical bath deposition （CBD）. It is found that the films deposited at a high substrate temperature （200 ℃） have a preferential orientation along （002） which is consistent with CBD-grown films. Absorption spectra reveal that the films are highly transparent and the optical band gap values are found to be in a range of 2.44 eV-2.56 eV. Culnl_xGaxSe2 （CIGS） solar cells with in-situ VTE-grown CdS films exhibit higher values of Voc together with smaller values of Jsc than those from CBD. Eventually the conversion efficiency and fill factor become slightly better than those from the CBD method. Our work suggests that the in-situ thermal evaporation method can be a competitive alternative to the CBD method, particularly in the physical- and vacuum-based CIGS technology.
文摘The promising solar material Cadmium Telluride (CdTe) is successfully deposited on both plain glass and ITO coated glass substrates. Many variations in composition of the solution used for deposition of the film are made to optimize the deposition conditions. The bandgap calculated from optical transmission studies is found to be a function of the Cd/Te atomic ratio in the film. The atomic ratio in the film is a function of the Cd/Te concentration ratio in the solution used in deposition. Based on several experimental data points an equation involving the Cd/Te atomic ratio in the film and the chemistry of the solution is deduced.
文摘We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposition method. The changes in film thickness as a function of time were monitored. The films were characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FE-SEM), optical measurement techniques and electrical measurement. X-ray diffraction results indicate that all the CuS thin films have an orthorhombic (covellite) structure with preferential orientation along (113) direction. The intensity of the diffraction peaks increases as thickness of the film increases. Uniform deposition having nanocrystalline granular morphology distributed over the entire glass substrate was observed through FE-SEM studies. The crystalline and surface properties of the CuS thin films improved with increase in the film thickness. Transmittance (except for 210 nm thick CuS film) together with band gap values was found to decrease with increase in thickness. I-V measurements under dark and illumination condition show that the CuS thin films give a good photoresponse.
