The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with d...The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.展开更多
对P型Cz-Si太阳能电池进行光致再生(LIR)测试,探寻抑制光致衰减(LID)效应的解决方案。选取A、B组电池样品各4片,在230℃下,A组分别采用[1,10,20,30]k W/m^2的光照功率进行10 s的LIR处理、B组采用20 k W/m^2的光照功率分别进行[10,20,30,...对P型Cz-Si太阳能电池进行光致再生(LIR)测试,探寻抑制光致衰减(LID)效应的解决方案。选取A、B组电池样品各4片,在230℃下,A组分别采用[1,10,20,30]k W/m^2的光照功率进行10 s的LIR处理、B组采用20 k W/m^2的光照功率分别进行[10,20,30,40]s的LIR处理;A、B组均在2 k W/m^2光照功率、85℃温度下进行10 H的LID测试,考察LIR后和LID后的电池转换效率相对变化值。随着光照功率的增大,LIR后的相对变化值由0.148%提升至0.792%,LID后的相对变化值由-2.608%改善至-0.396%,效果显著;随着光照时间的推移,LIR后的相对变化值由0.695%提升至0.939%,LID后的相对变化值由-0.794%改善至-0.395%,不甚显著。对现象成因进行讨论,表明高光照功率激发了电池硅基体内部的H^+、H^0和H^-,其中H^0和H^-存在的电子能够分别对硅基体内部和表面进行钝化,提升其少子寿命;H^+能够与B^-结合成BH复合体,阻碍BO复合体的生成,从而抑制电池的LID效应。展开更多
基金Supported by Hong Kong,Macao and Taiwan Science&Technology Cooperation Program of China under Grant No2014DFH10190the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021+1 种基金the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092the Qing Lan Project
文摘The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.
文摘对P型Cz-Si太阳能电池进行光致再生(LIR)测试,探寻抑制光致衰减(LID)效应的解决方案。选取A、B组电池样品各4片,在230℃下,A组分别采用[1,10,20,30]k W/m^2的光照功率进行10 s的LIR处理、B组采用20 k W/m^2的光照功率分别进行[10,20,30,40]s的LIR处理;A、B组均在2 k W/m^2光照功率、85℃温度下进行10 H的LID测试,考察LIR后和LID后的电池转换效率相对变化值。随着光照功率的增大,LIR后的相对变化值由0.148%提升至0.792%,LID后的相对变化值由-2.608%改善至-0.396%,效果显著;随着光照时间的推移,LIR后的相对变化值由0.695%提升至0.939%,LID后的相对变化值由-0.794%改善至-0.395%,不甚显著。对现象成因进行讨论,表明高光照功率激发了电池硅基体内部的H^+、H^0和H^-,其中H^0和H^-存在的电子能够分别对硅基体内部和表面进行钝化,提升其少子寿命;H^+能够与B^-结合成BH复合体,阻碍BO复合体的生成,从而抑制电池的LID效应。
文摘研究了最大栅电流应力 (即 p MOSFET最坏退化情况 )下 p MOSFET栅电流的退化特性 .实验发现 ,在最大栅电流应力下 ,p MOSFET栅电流随应力时间会发生很大下降 ,而且在应力初期和应力末期栅电流的下降规律均会偏离公认的指数规律 .给出了所有这些现象的详细物理解释 ,并在此基础上提出了一种新的用于 p
