Periodic arrays of hybrid-shunted piezoelectric patches are used to control the band-gaps of phononic metamaterial beams. Passive resistive-inductive （RL） shunting circuits can produce a narrow resonant band-gap （R...Periodic arrays of hybrid-shunted piezoelectric patches are used to control the band-gaps of phononic metamaterial beams. Passive resistive-inductive （RL） shunting circuits can produce a narrow resonant band-gap （RG）, and active negative capacitive （NC） shunting circuits can broaden the Bragg band-gaps （BGs）. In this article, active NC shunting circuits and passive resonant RL shunting circuits are connected to the same piezoelectric patches in parallel, which are usually called hybrid shunting circuits, to control the location and the extent of the band-gaps. A super-wide coupled band-gap is generated when the coupling between RG and the BG occurs. The attenuation constant of the infinite periodic structure is predicted by the transfer matrix method, which is compared with the vibration transmittance of a finite periodic structure calculated by the finite element method. Numerical results show that the hybrid-shunting circuits can make the band-gaps wider by appropriately selecting the inductances, negative capacitances, and resistances.展开更多
In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on out...In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.展开更多
The modification of nanostructured materials is of great interest due to controllable and unusual inherent properties in such materials. Single phase Fe doped Zn O nanostructures have been fabricated through simple, v...The modification of nanostructured materials is of great interest due to controllable and unusual inherent properties in such materials. Single phase Fe doped Zn O nanostructures have been fabricated through simple, versatile and quick low temperature solution route with reproducible results. The amount of Fe dopant is found to play a significant role for the growth of crystal dimension. The effect of changes in the morphology can be obviously observed in the structural and micro-structural investigations, which may be due to a driving force induced by dipole-dipole interaction. The band gap of Zn O nanostructures is highly shifted towards the visible range with increase of Fe contents, while ferromagnetic properties have been significantly improved.The prepared nanostructures have been found to be nontoxic to SH-SY5 Y Cells. The present study clearly indicates that the Fe doping provides an effective way of tailoring the crystal dimension, optical band-gap and ferromagnetic properties of Zn O nanostructure-materials with nontoxic nature, which make them potential for visible light activated photocatalyst to overcome environmental pollution, fabricate spintronics devices and biosafe drug delivery agent.展开更多
Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obta...Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.展开更多
The optical properties of blue emitting BaAl2S4:Eu thin-films were studied. The emission peak is around 470 nm, whose FWHM (full width at half maximum) is 35 nm. The dielectric constant is 3.03 from transmission spect...The optical properties of blue emitting BaAl2S4:Eu thin-films were studied. The emission peak is around 470 nm, whose FWHM (full width at half maximum) is 35 nm. The dielectric constant is 3.03 from transmission spectrum, and the optical band gap is approximately 4.6 eV. It is found that the cubic phase and orthorhombic phase exist in fabricated thin-films. Furthermore, the energy band structure of BaAl2S4 : Eu thin-films from X-ray photo-electron spectra (XPS) and the absorption spectra were analyzed.展开更多
M-type barium hexaferrites with chemical composition Ba1-xDyxFe12-yCryO19(x = 0.0, 0.1, 0.2, and y =0.0, 0.4, 0.5) were synthesized via sol–gel auto-combustion method. The samples were pre-sintered at 400℃ for 3 h a...M-type barium hexaferrites with chemical composition Ba1-xDyxFe12-yCryO19(x = 0.0, 0.1, 0.2, and y =0.0, 0.4, 0.5) were synthesized via sol–gel auto-combustion method. The samples were pre-sintered at 400℃ for 3 h and sintered at 950℃ for 5 h. The changes in the structural, dielectric, and optical properties were studied after the substitution of Dy3+and Cr3+ions. X-ray diffraction(XRD) analysis confirms the formation of single phase hexaferrites with the absence of secondary phase. FTIR analysis gives an idea of the formation of hexaferrites with the appearance of two peaks at 438 cm-1and 589 cm-1. The field emission scanning electron micrographs(FESEM) show a combination of crystallites with large shapes close to hexagonal platelet-like shape and others with rice or rod-like shapes, whereas EDX and elemental analysis confirm the stoichiometry of prepared samples. The calculated band gap from UV-vis NIR spectroscopy spectra was found to decreases with increase in Dy3+–Cr3+substitution. The dielectric properties were explained on the basis of Maxwell–Wagner model. Enhancement of dielectric constant at higher frequencies was observed in all the samples. Low dielectric loss is also observed in all the samples and Cole–Cole plot shows that grain boundary resistance(Rgb) contribute most to the dielectric properties. The prepared samples exhibit properties that could be useful for optoelectronics and high frequency application.展开更多
The band structures of BSb and BxGa1-xSb alloys are studied using first-principles calculations in the generalized gradient approximation. By SQS-8 supercells to model a random alloy, the direct transition energy-gap ...The band structures of BSb and BxGa1-xSb alloys are studied using first-principles calculations in the generalized gradient approximation. By SQS-8 supercells to model a random alloy, the direct transition energy-gap (Γ15v- Γ1c) bowing of 3.0 eV is obtained for BxGa1-xSb alloys in x = 0-50%, in x = 0-11% the energy-gap is the band-gap and increases by 7 meV/%B with boron composition increasing; by SQS-16 supercells the bowing parameter is about 1.9 eV in x = 0-12.5%. The formation enthalpies of mixing, ΔH, are calculated for BxGa1-xAs and BxGa1-xSb alloys. A comparison of enthalpies indicates that BxGa1-xSb films with boron composition of 7% may be possible.展开更多
The mechanism of the shift of the band-gap in phononic crystal （PC） with different initial confining pressures is studied experimentally and numerically. The experimental results and numerical analysis simultaneousl...The mechanism of the shift of the band-gap in phononic crystal （PC） with different initial confining pressures is studied experimentally and numerically. The experimental results and numerical analysis simultaneously indicate that the confining pressure can efficiently tune the location in and the width of the band-gap. The present work provides a basis for tuning the band-gap of phononic crystal in engineering applications.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.51275519 and 51175501)
文摘Periodic arrays of hybrid-shunted piezoelectric patches are used to control the band-gaps of phononic metamaterial beams. Passive resistive-inductive （RL） shunting circuits can produce a narrow resonant band-gap （RG）, and active negative capacitive （NC） shunting circuits can broaden the Bragg band-gaps （BGs）. In this article, active NC shunting circuits and passive resonant RL shunting circuits are connected to the same piezoelectric patches in parallel, which are usually called hybrid shunting circuits, to control the location and the extent of the band-gaps. A super-wide coupled band-gap is generated when the coupling between RG and the BG occurs. The attenuation constant of the infinite periodic structure is predicted by the transfer matrix method, which is compared with the vibration transmittance of a finite periodic structure calculated by the finite element method. Numerical results show that the hybrid-shunting circuits can make the band-gaps wider by appropriately selecting the inductances, negative capacitances, and resistances.
文摘In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.
基金Project(2022YFB2603400) supported by the National Key R&D Program of ChinaProjects(52208449, 52108420) supported by the National Natural Science Foundation of ChinaProject(2022NSFSC1908) supported by the Natural Science Foundation of Sichuan Province,China。
基金supported by Higher Education Commission of Pakistan, National Basic Research Program of China (2010CB934602)National Science Foundation of China (51171007 and 51271009)
文摘The modification of nanostructured materials is of great interest due to controllable and unusual inherent properties in such materials. Single phase Fe doped Zn O nanostructures have been fabricated through simple, versatile and quick low temperature solution route with reproducible results. The amount of Fe dopant is found to play a significant role for the growth of crystal dimension. The effect of changes in the morphology can be obviously observed in the structural and micro-structural investigations, which may be due to a driving force induced by dipole-dipole interaction. The band gap of Zn O nanostructures is highly shifted towards the visible range with increase of Fe contents, while ferromagnetic properties have been significantly improved.The prepared nanostructures have been found to be nontoxic to SH-SY5 Y Cells. The present study clearly indicates that the Fe doping provides an effective way of tailoring the crystal dimension, optical band-gap and ferromagnetic properties of Zn O nanostructure-materials with nontoxic nature, which make them potential for visible light activated photocatalyst to overcome environmental pollution, fabricate spintronics devices and biosafe drug delivery agent.
基金Supported by the Special Funds for Major State Basic Research Project of China under Grant No 2006CB6049, the National Natural Science Foundation of China under Grant Nos 6039072, 60476030, 60421003 and 60676057, the Ministry of Education of China （10416）, the Research Fund for the Doctoral Programme of Higher Education of China （20050284004）, and the Natural Science Foundation of Jiangsu Province （BK2005210 and BK2006126）.
文摘Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.
文摘The optical properties of blue emitting BaAl2S4:Eu thin-films were studied. The emission peak is around 470 nm, whose FWHM (full width at half maximum) is 35 nm. The dielectric constant is 3.03 from transmission spectrum, and the optical band gap is approximately 4.6 eV. It is found that the cubic phase and orthorhombic phase exist in fabricated thin-films. Furthermore, the energy band structure of BaAl2S4 : Eu thin-films from X-ray photo-electron spectra (XPS) and the absorption spectra were analyzed.
文摘M-type barium hexaferrites with chemical composition Ba1-xDyxFe12-yCryO19(x = 0.0, 0.1, 0.2, and y =0.0, 0.4, 0.5) were synthesized via sol–gel auto-combustion method. The samples were pre-sintered at 400℃ for 3 h and sintered at 950℃ for 5 h. The changes in the structural, dielectric, and optical properties were studied after the substitution of Dy3+and Cr3+ions. X-ray diffraction(XRD) analysis confirms the formation of single phase hexaferrites with the absence of secondary phase. FTIR analysis gives an idea of the formation of hexaferrites with the appearance of two peaks at 438 cm-1and 589 cm-1. The field emission scanning electron micrographs(FESEM) show a combination of crystallites with large shapes close to hexagonal platelet-like shape and others with rice or rod-like shapes, whereas EDX and elemental analysis confirm the stoichiometry of prepared samples. The calculated band gap from UV-vis NIR spectroscopy spectra was found to decreases with increase in Dy3+–Cr3+substitution. The dielectric properties were explained on the basis of Maxwell–Wagner model. Enhancement of dielectric constant at higher frequencies was observed in all the samples. Low dielectric loss is also observed in all the samples and Cole–Cole plot shows that grain boundary resistance(Rgb) contribute most to the dielectric properties. The prepared samples exhibit properties that could be useful for optoelectronics and high frequency application.
基金Supported by the National Natural Science Foundation of China (Grant No.10774031)the Guangdong Provincial Natural Science Foundation (Grant No.07001790)
文摘The band structures of BSb and BxGa1-xSb alloys are studied using first-principles calculations in the generalized gradient approximation. By SQS-8 supercells to model a random alloy, the direct transition energy-gap (Γ15v- Γ1c) bowing of 3.0 eV is obtained for BxGa1-xSb alloys in x = 0-50%, in x = 0-11% the energy-gap is the band-gap and increases by 7 meV/%B with boron composition increasing; by SQS-16 supercells the bowing parameter is about 1.9 eV in x = 0-12.5%. The formation enthalpies of mixing, ΔH, are calculated for BxGa1-xAs and BxGa1-xSb alloys. A comparison of enthalpies indicates that BxGa1-xSb films with boron composition of 7% may be possible.
基金Project supported by the National Natural Science Foundation of China(Grant No.10732010,10972010,and 11028206)
文摘The mechanism of the shift of the band-gap in phononic crystal （PC） with different initial confining pressures is studied experimentally and numerically. The experimental results and numerical analysis simultaneously indicate that the confining pressure can efficiently tune the location in and the width of the band-gap. The present work provides a basis for tuning the band-gap of phononic crystal in engineering applications.
