This paper proposes a scheme for transferring an N-atom state between two distant cavities via an optical fiber. The scheme is based on adiabatic passage along a dark state. In the scheme, all the atoms are always in ...This paper proposes a scheme for transferring an N-atom state between two distant cavities via an optical fiber. The scheme is based on adiabatic passage along a dark state. In the scheme, all the atoms are always in ground state, the field mode of the fiber remains in vacuum state, and the field mode of the cavities being excited can be negligible under certain conditions. Therefore, the scheme is very robust against decoherence. The successful probability of implementing the quantum state transfer increases with increasing number of atoms. Furthermore, the interaction time does not need to be accurately adjusted as long as the adiabaticity condition is fulfilled.展开更多
We first propose a scheme for preparing the genuine Yeo-Chua 4-qubit entangled state via cavity QED. Using the genuine Yeo-Chua atomic state, we further propose a cavity QED scheme for teleporting an arbitrary two-ato...We first propose a scheme for preparing the genuine Yeo-Chua 4-qubit entangled state via cavity QED. Using the genuine Yeo-Chua atomic state, we further propose a cavity QED scheme for teleporting an arbitrary two-atom state. In two schemes the large-detuning is chosen and the necessary time is designed to be much shorter than Rydberg-atom’s lifespan. Both schemes share the distinct advantage that cavity decay and atom decay can be neglected. As for the interaction manipulation, our preparation scheme is more feasible than a recent similar one. Compared with the Yeo and Chua’s scheme, our teleportation scheme has significantly reduced the measuring difficulty.展开更多
In this work, we study the influence of carrier gas H2flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effecti...In this work, we study the influence of carrier gas H2flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H2flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H2flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.展开更多
A simple scheme is proposed to generate the W state of N A-type neutral atoms trapped in an optical cavity via Raman transition. Conditional on no photon leakage from the cavity, the N-qubit W state can be prepared pe...A simple scheme is proposed to generate the W state of N A-type neutral atoms trapped in an optical cavity via Raman transition. Conditional on no photon leakage from the cavity, the N-qubit W state can be prepared perfectly by turning on a classical coupling field for an appropriate time. Compared with the previous ones, our scheme requires neither individual laser addressing of the atoms, nor demand for controlling N atoms to go through an optical cavity simultaneously with a constant velocity. We investigate the influence of cavity decay using the quantum jump approach and show that the preparation time decreases and the success probability increases with atom number because of a collective enhancement of the coupling.展开更多
基金supported by the Science Foundation of Educational Committee of Fujian Province (Grant No JB06042)
文摘This paper proposes a scheme for transferring an N-atom state between two distant cavities via an optical fiber. The scheme is based on adiabatic passage along a dark state. In the scheme, all the atoms are always in ground state, the field mode of the fiber remains in vacuum state, and the field mode of the cavities being excited can be negligible under certain conditions. Therefore, the scheme is very robust against decoherence. The successful probability of implementing the quantum state transfer increases with increasing number of atoms. Furthermore, the interaction time does not need to be accurately adjusted as long as the adiabaticity condition is fulfilled.
基金supported by the program for New Century Excellent Talents at the University of China (Grant No. NCET-06-0554)the National Natural Science Foundation of China (Grant Nos. 10975001,60677001, 10747146 and 10874122)+3 种基金the Science and Technology Fund of Anhui Province for Outstanding Youth (Grant No. 06042087)the Talent Foundation of Higher Education of Anhui Province for Outstanding Youth(Grant No. 2009SQRZ018)the Science Research Foundation of Anhui University for Youth (Grant No. 2009QN017B)the Natural Science Foundation of Guangdong Province (Grant Nos. 06300345 and 7007806)
文摘We first propose a scheme for preparing the genuine Yeo-Chua 4-qubit entangled state via cavity QED. Using the genuine Yeo-Chua atomic state, we further propose a cavity QED scheme for teleporting an arbitrary two-atom state. In two schemes the large-detuning is chosen and the necessary time is designed to be much shorter than Rydberg-atom’s lifespan. Both schemes share the distinct advantage that cavity decay and atom decay can be neglected. As for the interaction manipulation, our preparation scheme is more feasible than a recent similar one. Compared with the Yeo and Chua’s scheme, our teleportation scheme has significantly reduced the measuring difficulty.
基金Project supported by the the Science Challenge Project of China(Grant No.TZ2016003)the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,and 61474110)Beijing Municipal Science and Technology Project(Grant No.Z161100002116037)
文摘In this work, we study the influence of carrier gas H2flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H2flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H2flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10504042)the Key Laboratory of Low Dimensional Quantum Structures and Quantum Control (Hunan Normal University)Ministry of Education of China (Grant No.QSQC0902)
文摘A simple scheme is proposed to generate the W state of N A-type neutral atoms trapped in an optical cavity via Raman transition. Conditional on no photon leakage from the cavity, the N-qubit W state can be prepared perfectly by turning on a classical coupling field for an appropriate time. Compared with the previous ones, our scheme requires neither individual laser addressing of the atoms, nor demand for controlling N atoms to go through an optical cavity simultaneously with a constant velocity. We investigate the influence of cavity decay using the quantum jump approach and show that the preparation time decreases and the success probability increases with atom number because of a collective enhancement of the coupling.
