Some cobalt antimonides have been prepared and studied as the candidate anodematerials for lithium ion batteries. Reversible capacities of 424,423 and 546 mA.h.g^(-1) weremeasured at the first cycle for as-solidified ...Some cobalt antimonides have been prepared and studied as the candidate anodematerials for lithium ion batteries. Reversible capacities of 424,423 and 546 mA.h.g^(-1) weremeasured at the first cycle for as-solidified CoSb_2, CoSb_3 and annealed CoSb_3 respectively. A lowlithium ions diffusion coefficient in the order of 10^(16) m^2.s^(-1) was estimated from thecoulometric titration measurements in the annealed CoSb_3 electrode. It was found that theelectrochemical properties of fine powders are significantly better than coarse powders. However theSEM picture shows that the nano-sized CoSb_3 powders gathered to larger granules, which worsenssomewhat the capacity retention of the nano-sized materials, although the volume capacities of theannealed and ball milled CoSb_3 remain near twice of that of graphite after 50 cycles.展开更多
Low pressure metalorganic chemical vapour deposition （LP-MOCVD） growth and characteristics of InAsSb on （100） GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. Th...Low pressure metalorganic chemical vapour deposition （LP-MOCVD） growth and characteristics of InAsSb on （100） GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52 × 10^16 cm^-3.展开更多
Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification （VDS） technique has been employed f...Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification （VDS） technique has been employed for the growth of bulk crystals, without the seed, without contact to the ampoule wall, without coating and without external pressure. An automated furnace was designed and fabricated for the controlled temperature gradients, growth conditions and parameters. The typical ingots growths of GaSb have shown the gap of 20 μm-145 μm and mobility μn = 1125 cm^2/V.sec at 300 K. Mobility is highest and five times larger than the attached growths. Dislocation density is the order of 104/cm2 in the conical region, decreases in the direction of growth, and in many crystals reached less than 103/cm2. The spontaneous gap formation due to the meniscus depends on the pressure differences and thermal state. GaSb grown ingots have shown progress in the properties of crystal grown ever, and attributed to reduce thermal stress without contact to the ampoule wall.展开更多
Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, ...Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2＂Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm＂2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide （InSb） growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached.展开更多
A comprehensive first principles study of III-Antimonide binary compounds is hardly found in literature. We report a broad study of structural and electronic properties of boron antimonide （BSb）, aluminium antimoni...A comprehensive first principles study of III-Antimonide binary compounds is hardly found in literature. We report a broad study of structural and electronic properties of boron antimonide （BSb）, aluminium antimonide （AlSb）, gallium antimonide （GaSb） and indium antimonide （InSb） in zineblende phase based on density functional theory （DFT）. Our calculations are based on Full-PotentiM Lineaxized Augmented Plane wave plus local orbitals （FP- L（APWq-lo）） method. Different forms of exchange-correlation energy functional and corresponding potential are employed for structural and electronic properties. Our computed results for lattice parameters, bulk moduli, their pressure derivatives, and cohesive energy are consistent with the available experimental data. Boron antimonide is found to be the hardest compound of this group. For band structure calculations, in addition to LDA and GGA, we used GGA-EV, an approximation employed by Engel and Vosko. The band gap results with GGA-EV are of significant improvement over the earlier work.展开更多
An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one p...An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 I^m antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below i ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.展开更多
This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed ...This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10^(10) cm·Hz^(1/2)/W, and a minimum dark current density of 1.02 × 10^(-5) A/cm^(2).Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.展开更多
Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large...Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful.Here,we successfully grew the micronsized indium antimonide(InSb) wires,and examined their nonlinear optical properties by Z-scan and I-scan(power-dependent) methods within the wavelength range of 0.8-2.8 μm.Furthermore,we demonstrated InSb micro wires(MWs) working as an effective and robust optical switch within 1-2.8 μm wavelength.The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.展开更多
Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralski technique are carried out as functions of temperature （35-350 K） and magnetic field （0...Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralski technique are carried out as functions of temperature （35-350 K） and magnetic field （0-1.35 T）. The power law model is used to explain the temperature-dependent resistivity. The magnetic-field-dependent data are analysed using the quantitative mobility spectrum analysis technique. The effect of individual band parameters （nL, nr, μL, μr, p and μp） on both the electron and magneto transports have been discussed. The EL - Er energy separation between the L and conduction band edges is also derived.展开更多
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated...In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.展开更多
RE 3Cu 3Sb 4(RE=Nd, Sm, Tb, Dy, Ho) was synthesized by arc melting method and their crystal structures were characterized by powder X ray method. The compounds crystallize in cubic system, Y 3Au 3Sb 4 type, sp...RE 3Cu 3Sb 4(RE=Nd, Sm, Tb, Dy, Ho) was synthesized by arc melting method and their crystal structures were characterized by powder X ray method. The compounds crystallize in cubic system, Y 3Au 3Sb 4 type, space group I43d (No.220), Pearson code cI40. The unit cell parameters are: Nd 3Cu 3Sb 4: a =0 96749(1) nm, V =0 90561(3) nm 3; Sm 3Cu 3Sb 4: a =0 96145(1) nm, V =0 88875(3) nm 3; Tb 3Cu 3Sb 4: a =0 95362(1) nm, V =0 86721(3) nm 3; Dy 3Cu 3Sb 4: a =0 95088(1) nm, V =0 85975(3) nm 3; Ho 3Cu 3Sb 4: a =0 9488(2) nm, V =0 8541(5) nm 3; Z =4. The structures are characterized by covalent bonded Cu Sb tetrahedra which form three dimensional networks by sharing corners. The rare earth atoms are distributed in the cages. The formula with the charge balance can be written as RE 3+ 3Cu 1+ 3Sb 3- 4 which are metallic Zintl phases having the weak metallic conductivity. The bonds have typical transitional features. General atomic coordination environment rules are followed. The unit cell parameters show the lanthanide contraction.展开更多
基金This work is financially supported by the National Natural Science Foundation of China(No.59771032)RFDP of the Education Ministry of China (No.97033518 and 20010335045)
文摘Some cobalt antimonides have been prepared and studied as the candidate anodematerials for lithium ion batteries. Reversible capacities of 424,423 and 546 mA.h.g^(-1) weremeasured at the first cycle for as-solidified CoSb_2, CoSb_3 and annealed CoSb_3 respectively. A lowlithium ions diffusion coefficient in the order of 10^(16) m^2.s^(-1) was estimated from thecoulometric titration measurements in the annealed CoSb_3 electrode. It was found that theelectrochemical properties of fine powders are significantly better than coarse powders. However theSEM picture shows that the nano-sized CoSb_3 powders gathered to larger granules, which worsenssomewhat the capacity retention of the nano-sized materials, although the volume capacities of theannealed and ball milled CoSb_3 remain near twice of that of graphite after 50 cycles.
基金Project supported by the National High Technology Research and Development Program of China (Grant No 2005A000200)the West Light Plan of China (Grant No 2005ZD01)the Xi’an Applied Materials Innovation Fund of China (Grant No XA-AM-200613)
文摘Low pressure metalorganic chemical vapour deposition （LP-MOCVD） growth and characteristics of InAsSb on （100） GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52 × 10^16 cm^-3.
文摘Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification （VDS） technique has been employed for the growth of bulk crystals, without the seed, without contact to the ampoule wall, without coating and without external pressure. An automated furnace was designed and fabricated for the controlled temperature gradients, growth conditions and parameters. The typical ingots growths of GaSb have shown the gap of 20 μm-145 μm and mobility μn = 1125 cm^2/V.sec at 300 K. Mobility is highest and five times larger than the attached growths. Dislocation density is the order of 104/cm2 in the conical region, decreases in the direction of growth, and in many crystals reached less than 103/cm2. The spontaneous gap formation due to the meniscus depends on the pressure differences and thermal state. GaSb grown ingots have shown progress in the properties of crystal grown ever, and attributed to reduce thermal stress without contact to the ampoule wall.
文摘Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2＂Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm＂2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide （InSb） growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached.
文摘A comprehensive first principles study of III-Antimonide binary compounds is hardly found in literature. We report a broad study of structural and electronic properties of boron antimonide （BSb）, aluminium antimonide （AlSb）, gallium antimonide （GaSb） and indium antimonide （InSb） in zineblende phase based on density functional theory （DFT）. Our calculations are based on Full-PotentiM Lineaxized Augmented Plane wave plus local orbitals （FP- L（APWq-lo）） method. Different forms of exchange-correlation energy functional and corresponding potential are employed for structural and electronic properties. Our computed results for lattice parameters, bulk moduli, their pressure derivatives, and cohesive energy are consistent with the available experimental data. Boron antimonide is found to be the hardest compound of this group. For band structure calculations, in addition to LDA and GGA, we used GGA-EV, an approximation employed by Engel and Vosko. The band gap results with GGA-EV are of significant improvement over the earlier work.
文摘An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 I^m antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below i ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.
文摘This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10^(10) cm·Hz^(1/2)/W, and a minimum dark current density of 1.02 × 10^(-5) A/cm^(2).Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.
基金supported by the National Natural Science Foundation of China (Grant Nos. 62005139, and 12174212)Natural Science Foundation of Shandong Province (Grant No. ZR2019MF061)+7 种基金the support of Aalto University Doctoral SchoolWalter Ahlstram FoundationElektroniikkainsinoorien SaatioSahkoinsinooriliiton SaatioNokia FoundationFinnish Foundation for Technology Promotion (Tekniikan Edistamissaatio)Waldemar von Frenckell’s FoundationKansallis-Osake-Pankki Fund。
文摘Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful.Here,we successfully grew the micronsized indium antimonide(InSb) wires,and examined their nonlinear optical properties by Z-scan and I-scan(power-dependent) methods within the wavelength range of 0.8-2.8 μm.Furthermore,we demonstrated InSb micro wires(MWs) working as an effective and robust optical switch within 1-2.8 μm wavelength.The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.
文摘Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralski technique are carried out as functions of temperature （35-350 K） and magnetic field （0-1.35 T）. The power law model is used to explain the temperature-dependent resistivity. The magnetic-field-dependent data are analysed using the quantitative mobility spectrum analysis technique. The effect of individual band parameters （nL, nr, μL, μr, p and μp） on both the electron and magneto transports have been discussed. The EL - Er energy separation between the L and conduction band edges is also derived.
文摘In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.
文摘RE 3Cu 3Sb 4(RE=Nd, Sm, Tb, Dy, Ho) was synthesized by arc melting method and their crystal structures were characterized by powder X ray method. The compounds crystallize in cubic system, Y 3Au 3Sb 4 type, space group I43d (No.220), Pearson code cI40. The unit cell parameters are: Nd 3Cu 3Sb 4: a =0 96749(1) nm, V =0 90561(3) nm 3; Sm 3Cu 3Sb 4: a =0 96145(1) nm, V =0 88875(3) nm 3; Tb 3Cu 3Sb 4: a =0 95362(1) nm, V =0 86721(3) nm 3; Dy 3Cu 3Sb 4: a =0 95088(1) nm, V =0 85975(3) nm 3; Ho 3Cu 3Sb 4: a =0 9488(2) nm, V =0 8541(5) nm 3; Z =4. The structures are characterized by covalent bonded Cu Sb tetrahedra which form three dimensional networks by sharing corners. The rare earth atoms are distributed in the cages. The formula with the charge balance can be written as RE 3+ 3Cu 1+ 3Sb 3- 4 which are metallic Zintl phases having the weak metallic conductivity. The bonds have typical transitional features. General atomic coordination environment rules are followed. The unit cell parameters show the lanthanide contraction.
