Hard X-ray Imager(HXI)is one of the three scientific instruments onboard the Advanced Spacebased Solar Observatory(ASO-S)mission,which is proposed for the 25th solar maximum by the Chinese solar community.HXI is desig...Hard X-ray Imager(HXI)is one of the three scientific instruments onboard the Advanced Spacebased Solar Observatory(ASO-S)mission,which is proposed for the 25th solar maximum by the Chinese solar community.HXI is designed to investigate the non-thermal high-energy electrons accelerated in solar flares by providing images of solar flaring regions in the energy range from 30 keV to 200 keV.The imaging principle of HXI is based on spatially modulated Fourier synthesis and utilizes about 91 sets of bi-grid sub-collimators and corresponding LaBr3 detectors to obtain Fourier components with a spatial resolution of about 3 arcsec and a time resolution better than 0.5 s.An engineering prototype has been developed and tested to verify the feasibility of design.In this paper,we present background,instrument design and the development and test status of the prototype.展开更多
Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm...Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.展开更多
Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has a...Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has also been recently demonstrated in both bulk materials and thin films.However,the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours,often reporting degradation of the detection performance.Here it is shown that self-powered direct X-ray detectors,fabricated starting from a FAPbBr_(3)submicrometer-thick film deposition onto a mesoporous TiO_(2)scaffold,can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss,demonstrating ultra-high operational stability and excellent repeatability.No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy,revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film.In addition,trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy^(−1)cm^(−3)at 0 V,an unprecedented value in the field of thin-film-based photoconductors and photodiodes for“hard”X-rays.Finally,prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.展开更多
Perovskite materials have triggered a renewed interest in photovoltaic research in the recent years.They display crystal forms with 0D,1D and 2D,3D motifs,and several chemical forms,namely inorganic(titanates,rubidiat...Perovskite materials have triggered a renewed interest in photovoltaic research in the recent years.They display crystal forms with 0D,1D and 2D,3D motifs,and several chemical forms,namely inorganic(titanates,rubidiates,nobiates,tantalates etc.),organic/inorganic metal halides with single to multiple cations,and even organic polymer or quantum dot-infused hybrids.Each crystal type and chemical form are endowed with specific physicochemical,optical,electronic,and morphological properties.These unique properties render them suitable for targeted applications,namely photovoltaics,LEDs,photocatalysis/electrolysis/solar fuels/solar and Li-ion batteries,gas-sensors,ferroelectrics,capacitors,transistors and memristors,photodetectors,and lasers,for advanced quantum cryptography and outer space applications.At first,the crystal and material types,and physicochemical,morphological,and optoelectronic properties of perovskite materials are discussed.Particularly,we focus on those properties which cumulatively contribute to their application in the abovementioned fields.Simultaneously,a comprehensive discussion about the advances in each field is presented.Structure/property/application relationships with key advances demonstrate the versatility of perovskites in modern optoelectronic technologies.展开更多
Cadmium zinc telluride (CdZnTe) semiconductor has applications in the detection of X-rays and gamma-rays at room temperature without having to use a cooling system. Chemical etching and chemo-mechanical polishing are ...Cadmium zinc telluride (CdZnTe) semiconductor has applications in the detection of X-rays and gamma-rays at room temperature without having to use a cooling system. Chemical etching and chemo-mechanical polishing are processes used to smoothen CdZnTe wafer during detector device fabrication. These processes reduce surface damages left after polishing the wafers. In this paper, we compare the effects of etching and chemo-mechanical polishing on CdZnTe nuclear detectors, using a solution of hydrogen bromide in hydrogen peroxide and ethylene glycol mixture. X-ray photoelectron spectroscopy (XPS) was used to monitor TeO2 on the wafer surfaces. Current-voltage and detector-response measurements were made to study the electrical properties and energy resolution. XPS results showed that the chemical etching process resulted in the formation of more TeO2 on the detector surfaces compared to chemo-mechanical polishing. The electrical resistivity of the detector is of the order of 1010 Ω-cm. The chemo-mechanical polishing process increased the leakage current more that chemical etching. For freshly treated surfaces, the etching process is more detrimental to the energy resolution compared to chemo-mechanically polishing.展开更多
A transition edge sensor(TES)is extremely sensitive to changes in temperature,and combined with a high-Z metal of a certain thickness,it can realize high-energy resolution measurements of particles such as X-rays.X-ra...A transition edge sensor(TES)is extremely sensitive to changes in temperature,and combined with a high-Z metal of a certain thickness,it can realize high-energy resolution measurements of particles such as X-rays.X-rays with energies below 10 keV have a weak penetrating ability,hence,only gold or bismuth of a few micrometers in thickness can guarantee a quantum efficiency higher than 70%.Therefore,the entire structure of the TES X-ray detector in this energy range can be realized using a microfabrication process.However,for X-rays or γ-rays from 10 keV to 200 keV,submillimeter absorber layers are required,which cannot be realized using the microfabrication process.This paper first briefly introduces a set of TES X-ray detectors and their auxiliary systems,and then focuses on the introduction of the TES γ-ray detector with an absorber based on a submillimeter lead-tin alloy sphere.The detector achieved a quantum efficiency above 70% near 100 keV and an energy resolution of approximately 161.5 eV at 59.5 keV.展开更多
Halide perovskite single crystals(HPSCs)provide a unique platform to study the optoelectronic properties of such emerging semiconductor materials,while the temperature induced crystal growth method often has an increa...Halide perovskite single crystals(HPSCs)provide a unique platform to study the optoelectronic properties of such emerging semiconductor materials,while the temperature induced crystal growth method often has an increased solute integration speed and/or unavoidable solute consumption,resulting in a soaring or slumping crystal growth rate of HPSCs.Here,we developed a universal and facile solvent-vola tilization-limited-growth(SVG)strategy to finely control the crystal growth rate by the fine-control-valve for high quality crystal grown through solution processes.The grown HPSCs by SVG method exhibited a record low trap density of 2.8×10^(8)cm^(-3)and a high charge carrier mobility-lifetime product(μτproduct)of 0.021 cm2/V,indicating the excellent crystal quality.The crystal surface defects were further passivated by oxygen suppliers as Lewis base,which led to a reduction of surface leakage current by two times when using for low dose rate X-ray detection.Such HPSC X-ray detector displayed a high sensitivity of 1274μC/(Gyair cm^(2))with a lowest detectable dose rate of 0.56μGyair/s under 120 keV hard X-ray.Further applications including alloy composition analysis and metal flaw detection by HPSC detectors were also demonstrated,which not only shows the bright future for product quality inspection and non-destructive materials analysis,but also paves the way for growing high quality single crystals and fabricating polycrystalline films.展开更多
基金supported by the Strategic Priority Research Program on Space Science, Chinese Academy of Sciences (Grant No. XDA15320104)the National Natural Science Foundation of China (Grant Nos. 11427803, 11622327, 11703079, 11803093 and 11820101002)
文摘Hard X-ray Imager(HXI)is one of the three scientific instruments onboard the Advanced Spacebased Solar Observatory(ASO-S)mission,which is proposed for the 25th solar maximum by the Chinese solar community.HXI is designed to investigate the non-thermal high-energy electrons accelerated in solar flares by providing images of solar flaring regions in the energy range from 30 keV to 200 keV.The imaging principle of HXI is based on spatially modulated Fourier synthesis and utilizes about 91 sets of bi-grid sub-collimators and corresponding LaBr3 detectors to obtain Fourier components with a spatial resolution of about 3 arcsec and a time resolution better than 0.5 s.An engineering prototype has been developed and tested to verify the feasibility of design.In this paper,we present background,instrument design and the development and test status of the prototype.
基金supported by the National Key Research and Development Program of China(No.2020YFE0202002)the National Natural Science Foundation of China(Nos.11875146 and U1932143)。
文摘Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.
基金supported by the project“PARIDE”(Perovskite Advanced Radiotherapy&Imaging Detectors),funded under the Regional Research and Innovation Programme POR-FESR Lazio 2014-2020(project number:A0375-2020-36698).
文摘Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has also been recently demonstrated in both bulk materials and thin films.However,the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours,often reporting degradation of the detection performance.Here it is shown that self-powered direct X-ray detectors,fabricated starting from a FAPbBr_(3)submicrometer-thick film deposition onto a mesoporous TiO_(2)scaffold,can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss,demonstrating ultra-high operational stability and excellent repeatability.No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy,revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film.In addition,trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy^(−1)cm^(−3)at 0 V,an unprecedented value in the field of thin-film-based photoconductors and photodiodes for“hard”X-rays.Finally,prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.
文摘Perovskite materials have triggered a renewed interest in photovoltaic research in the recent years.They display crystal forms with 0D,1D and 2D,3D motifs,and several chemical forms,namely inorganic(titanates,rubidiates,nobiates,tantalates etc.),organic/inorganic metal halides with single to multiple cations,and even organic polymer or quantum dot-infused hybrids.Each crystal type and chemical form are endowed with specific physicochemical,optical,electronic,and morphological properties.These unique properties render them suitable for targeted applications,namely photovoltaics,LEDs,photocatalysis/electrolysis/solar fuels/solar and Li-ion batteries,gas-sensors,ferroelectrics,capacitors,transistors and memristors,photodetectors,and lasers,for advanced quantum cryptography and outer space applications.At first,the crystal and material types,and physicochemical,morphological,and optoelectronic properties of perovskite materials are discussed.Particularly,we focus on those properties which cumulatively contribute to their application in the abovementioned fields.Simultaneously,a comprehensive discussion about the advances in each field is presented.Structure/property/application relationships with key advances demonstrate the versatility of perovskites in modern optoelectronic technologies.
基金financially supported by the National Natural Science Foundation of China(61875154 and 52022071)the Natural Science Foundation of Jiangsu Province,China(BK20190214)+1 种基金the National Key R&D Program of China(2020YFB2008800)China Postdoctoral Science Foundation(2021M702513)。
文摘Cadmium zinc telluride (CdZnTe) semiconductor has applications in the detection of X-rays and gamma-rays at room temperature without having to use a cooling system. Chemical etching and chemo-mechanical polishing are processes used to smoothen CdZnTe wafer during detector device fabrication. These processes reduce surface damages left after polishing the wafers. In this paper, we compare the effects of etching and chemo-mechanical polishing on CdZnTe nuclear detectors, using a solution of hydrogen bromide in hydrogen peroxide and ethylene glycol mixture. X-ray photoelectron spectroscopy (XPS) was used to monitor TeO2 on the wafer surfaces. Current-voltage and detector-response measurements were made to study the electrical properties and energy resolution. XPS results showed that the chemical etching process resulted in the formation of more TeO2 on the detector surfaces compared to chemo-mechanical polishing. The electrical resistivity of the detector is of the order of 1010 Ω-cm. The chemo-mechanical polishing process increased the leakage current more that chemical etching. For freshly treated surfaces, the etching process is more detrimental to the energy resolution compared to chemo-mechanically polishing.
基金supported by the National major scientific research instrument development project(No.11927805)National Natural Science Foundation of China Young Scientists Fund(No.12005134)+2 种基金Shanghai-XFEL Beamline Project(SBP)(No.31011505505885920161A2101001)Shanghai Municipal Science and Technology Major Project(No.2017SHZDZX02)Shanghai Pujiang Program(No.20PJ1410900).
文摘A transition edge sensor(TES)is extremely sensitive to changes in temperature,and combined with a high-Z metal of a certain thickness,it can realize high-energy resolution measurements of particles such as X-rays.X-rays with energies below 10 keV have a weak penetrating ability,hence,only gold or bismuth of a few micrometers in thickness can guarantee a quantum efficiency higher than 70%.Therefore,the entire structure of the TES X-ray detector in this energy range can be realized using a microfabrication process.However,for X-rays or γ-rays from 10 keV to 200 keV,submillimeter absorber layers are required,which cannot be realized using the microfabrication process.This paper first briefly introduces a set of TES X-ray detectors and their auxiliary systems,and then focuses on the introduction of the TES γ-ray detector with an absorber based on a submillimeter lead-tin alloy sphere.The detector achieved a quantum efficiency above 70% near 100 keV and an energy resolution of approximately 161.5 eV at 59.5 keV.
基金the Fundamental Research Funds for the Central Universities,Jilin UniversityJilin University Scinece and Technology Innovation Research Team(2017TD-06)。
文摘Halide perovskite single crystals(HPSCs)provide a unique platform to study the optoelectronic properties of such emerging semiconductor materials,while the temperature induced crystal growth method often has an increased solute integration speed and/or unavoidable solute consumption,resulting in a soaring or slumping crystal growth rate of HPSCs.Here,we developed a universal and facile solvent-vola tilization-limited-growth(SVG)strategy to finely control the crystal growth rate by the fine-control-valve for high quality crystal grown through solution processes.The grown HPSCs by SVG method exhibited a record low trap density of 2.8×10^(8)cm^(-3)and a high charge carrier mobility-lifetime product(μτproduct)of 0.021 cm2/V,indicating the excellent crystal quality.The crystal surface defects were further passivated by oxygen suppliers as Lewis base,which led to a reduction of surface leakage current by two times when using for low dose rate X-ray detection.Such HPSC X-ray detector displayed a high sensitivity of 1274μC/(Gyair cm^(2))with a lowest detectable dose rate of 0.56μGyair/s under 120 keV hard X-ray.Further applications including alloy composition analysis and metal flaw detection by HPSC detectors were also demonstrated,which not only shows the bright future for product quality inspection and non-destructive materials analysis,but also paves the way for growing high quality single crystals and fabricating polycrystalline films.
