A low-voltage triggering silicon-controlled rectifier（LVTSCR）,for its high efficiency and low parasitic parameters,has many advantages in ESD protection,especially in ultra-deep sub-micron（UDSM） IC and high freque...A low-voltage triggering silicon-controlled rectifier（LVTSCR）,for its high efficiency and low parasitic parameters,has many advantages in ESD protection,especially in ultra-deep sub-micron（UDSM） IC and high frequency applications.In this paper,the impact factors of the snapback characteristics of a LVTSCR and the configuring modes are analyzed and evaluated in detail.These parameters include anode series resistance,gate voltage,structure and size of devices.In addition,a double-trench LVTSCR is presented that can increase the hold-on voltage effectively and offers easy adjustment.Also,its snapback characteristics can obey the ESD design window rule very well.The strategy of ESD protection in a RFIC using a LVTSCR is discussed at the end of the paper.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.60976068,61076097)the National Defense Foundation of China(No.413080401)
文摘A low-voltage triggering silicon-controlled rectifier（LVTSCR）,for its high efficiency and low parasitic parameters,has many advantages in ESD protection,especially in ultra-deep sub-micron（UDSM） IC and high frequency applications.In this paper,the impact factors of the snapback characteristics of a LVTSCR and the configuring modes are analyzed and evaluated in detail.These parameters include anode series resistance,gate voltage,structure and size of devices.In addition,a double-trench LVTSCR is presented that can increase the hold-on voltage effectively and offers easy adjustment.Also,its snapback characteristics can obey the ESD design window rule very well.The strategy of ESD protection in a RFIC using a LVTSCR is discussed at the end of the paper.
