A GaAs Photoconductive Semiconductor Switch (PCSS) with a 3-mm gap between the two opposed contact electrodes was developed with carefully chosen GaAs material, mechanical structure design, contact fabrication techniq...A GaAs Photoconductive Semiconductor Switch (PCSS) with a 3-mm gap between the two opposed contact electrodes was developed with carefully chosen GaAs material, mechanical structure design, contact fabrication techniques and its insulation protection. It is charged by a pulse power supply under a bias of 15 kV, illuminated by laser pulses of 1064 nm in wavelength, 56.12 μJ in optical energy per shot and 1 kHz pulse repetition rate (PRR). The GaAs PCSS can last for more than 3.6×106 shots and produce output pulses of 2 MW in peak power, 2 ns pulse duration and 65 ps time jitter from a 50-Ω load of the oscilloscope. When an electric field of 100 kV/cm bias was applied, the peak power of the load was measured at 10 MW. A series of measurements on the voltage conversion rates (VCR) and time jitters have been carried out as the bias voltage increases. In particular, taking into account the dependence of optical absorption coefficient on the bias voltages, the curve of the VCR changes with the bias voltages were analyzed quantitatively.展开更多
Cascading stages of high gain harmonic generation free electron laser （FEL） seem to be a feasible way to generate short wavelength radiation. With help of the analytical estimates, we design a two-stage cascading sc...Cascading stages of high gain harmonic generation free electron laser （FEL） seem to be a feasible way to generate short wavelength radiation. With help of the analytical estimates, we design a two-stage cascading scheme to achieve 131 nm DUV radiation on the basis of the Shanghai deep ultraviolet free electron laser test facility. Detailed studies on the FEL performance, the stability and the sensitivity of the output power to parameter variation have been achieved by GENESIS1.3, and design of the lattice structure is presented.展开更多
In this paper, we demonstrate the residual phase noise of a few microwave frequency dividers which usually limit the performance of frequency synthesizers. In order to compare these dividers under different operation ...In this paper, we demonstrate the residual phase noise of a few microwave frequency dividers which usually limit the performance of frequency synthesizers. In order to compare these dividers under different operation frequencies, we calculate additional time jitters of these dividers by using the measured phase noise. The time jitters are various from -0.1 fs to 43 fs in a bandwidth from 1 Hz to 100 Hz in dependent of models and operation frequencies. The HMC series frequency dividers exhibit outstanding performance for high operation frequencies, and the time jitters can be sub-fs. The time jitters of SP8401, MC10EP139, and MC100LVEL34 are comparable or even below that of HMC series for low operation frequencies.展开更多
基金supported by the National Natural Science Foundation of China (Grant No.10804016)the Key Laboratory Fund of Transient of Optics and Photonics of China (Grant No.YAK200501)
文摘A GaAs Photoconductive Semiconductor Switch (PCSS) with a 3-mm gap between the two opposed contact electrodes was developed with carefully chosen GaAs material, mechanical structure design, contact fabrication techniques and its insulation protection. It is charged by a pulse power supply under a bias of 15 kV, illuminated by laser pulses of 1064 nm in wavelength, 56.12 μJ in optical energy per shot and 1 kHz pulse repetition rate (PRR). The GaAs PCSS can last for more than 3.6×106 shots and produce output pulses of 2 MW in peak power, 2 ns pulse duration and 65 ps time jitter from a 50-Ω load of the oscilloscope. When an electric field of 100 kV/cm bias was applied, the peak power of the load was measured at 10 MW. A series of measurements on the voltage conversion rates (VCR) and time jitters have been carried out as the bias voltage increases. In particular, taking into account the dependence of optical absorption coefficient on the bias voltages, the curve of the VCR changes with the bias voltages were analyzed quantitatively.
基金Supported by Major State Basic Research Development Program of China(2002CB713600)
文摘Cascading stages of high gain harmonic generation free electron laser （FEL） seem to be a feasible way to generate short wavelength radiation. With help of the analytical estimates, we design a two-stage cascading scheme to achieve 131 nm DUV radiation on the basis of the Shanghai deep ultraviolet free electron laser test facility. Detailed studies on the FEL performance, the stability and the sensitivity of the output power to parameter variation have been achieved by GENESIS1.3, and design of the lattice structure is presented.
基金supported by the National Natural Science Foundation of China under Grant No.91336101 and No.61127901the West Light Foundation of the Chinese Academy of Sciences under Grant No.2013ZD02
文摘In this paper, we demonstrate the residual phase noise of a few microwave frequency dividers which usually limit the performance of frequency synthesizers. In order to compare these dividers under different operation frequencies, we calculate additional time jitters of these dividers by using the measured phase noise. The time jitters are various from -0.1 fs to 43 fs in a bandwidth from 1 Hz to 100 Hz in dependent of models and operation frequencies. The HMC series frequency dividers exhibit outstanding performance for high operation frequencies, and the time jitters can be sub-fs. The time jitters of SP8401, MC10EP139, and MC100LVEL34 are comparable or even below that of HMC series for low operation frequencies.
