Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical ...Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.展开更多
This paper presents a blended analytical electrical–thermal model for steady state thermal analysis of through-silicon-via（TSV） in three-dimensional（3 D） integrated circuits. The proposed analytical model is vali...This paper presents a blended analytical electrical–thermal model for steady state thermal analysis of through-silicon-via（TSV） in three-dimensional（3 D） integrated circuits. The proposed analytical model is validated by the commercial FEM tool—COMSOL. The comparison between the results of the proposed analytical formulas and COMSOL shows that the proposed formulas have very high accuracy with a maximum error of 0.1%.Based on the analytical model, the temperature performance of TSV is studied. Design guide lines of TSV are also given as：（1） the radius of the TSV increases, the resistance decreases and the temperature can be increased;（2） the thicker the dielectric layer, the higher the temperature;（3） compared with carbon nanotube, the Cu enlarges the temperature by 34 K, and the W case enlarges the temperature by 41 K.展开更多
Vacuum-assisted spin-coating is an effective polymer filling technology for sidewall insulating of through-silicon-via(TSV).This paper investigated the flow mechanism of the vacuum-assisted polymer filling process bas...Vacuum-assisted spin-coating is an effective polymer filling technology for sidewall insulating of through-silicon-via(TSV).This paper investigated the flow mechanism of the vacuum-assisted polymer filling process based on experiments and numerical simulation,and studied the effect of vacuum pressure,viscosity of polymer and aspect-ratio of trench on the filling performance.A 2D axisymmetric model,consisting of polymer partially filled into the trench and void at the bottom of trench,was developed for the computational fluid dynamics(CFD)simulation.The simulation results indicate that the vacuum-assisted polymer filling process goes through four stages,including bubble formation,bubble burst,air elimination and polymer re-filling.Moreover,the simulation results suggest that the pressure significantly affects the bubble formation and the polymer re-filling procedure,and the polymer viscosity and the trench aspect-ratio influence the duration of air elimination.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61131001,61322405,61204044,61376039,and 61334003)
文摘Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.
基金supported by the National Natural Science Foundation of China(Nos.61574106,61574104)the National Defense Pre-Research Foundation of China(No.9140A23060115DZ01062)the Key Science and Technology Special Project of Shaanxi Province(No.2015KTCQ01-5)
文摘This paper presents a blended analytical electrical–thermal model for steady state thermal analysis of through-silicon-via（TSV） in three-dimensional（3 D） integrated circuits. The proposed analytical model is validated by the commercial FEM tool—COMSOL. The comparison between the results of the proposed analytical formulas and COMSOL shows that the proposed formulas have very high accuracy with a maximum error of 0.1%.Based on the analytical model, the temperature performance of TSV is studied. Design guide lines of TSV are also given as：（1） the radius of the TSV increases, the resistance decreases and the temperature can be increased;（2） the thicker the dielectric layer, the higher the temperature;（3） compared with carbon nanotube, the Cu enlarges the temperature by 34 K, and the W case enlarges the temperature by 41 K.
文摘Vacuum-assisted spin-coating is an effective polymer filling technology for sidewall insulating of through-silicon-via(TSV).This paper investigated the flow mechanism of the vacuum-assisted polymer filling process based on experiments and numerical simulation,and studied the effect of vacuum pressure,viscosity of polymer and aspect-ratio of trench on the filling performance.A 2D axisymmetric model,consisting of polymer partially filled into the trench and void at the bottom of trench,was developed for the computational fluid dynamics(CFD)simulation.The simulation results indicate that the vacuum-assisted polymer filling process goes through four stages,including bubble formation,bubble burst,air elimination and polymer re-filling.Moreover,the simulation results suggest that the pressure significantly affects the bubble formation and the polymer re-filling procedure,and the polymer viscosity and the trench aspect-ratio influence the duration of air elimination.
