We investigate spin-dependent electron transport through graphene-based Rash ba-strain double junctions. It is found that when electrons are injected from left normal graphene region, high spin polarization oscillatio...We investigate spin-dependent electron transport through graphene-based Rash ba-strain double junctions. It is found that when electrons are injected from left normal graphene region, high spin polarization oscillation is achieved due to the wave-vector-dependent resonant tunneling. The spin polarization is negligible once the incident direction is reversed. Such a remarkable difference arises from pseudogap caused by the Rashba spin-orbit interaction.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos.11364019,11165008,11065007the Foundation of East China Jiaotong University under Grant No.09121038
文摘We investigate spin-dependent electron transport through graphene-based Rash ba-strain double junctions. It is found that when electrons are injected from left normal graphene region, high spin polarization oscillation is achieved due to the wave-vector-dependent resonant tunneling. The spin polarization is negligible once the incident direction is reversed. Such a remarkable difference arises from pseudogap caused by the Rashba spin-orbit interaction.
