作为微电池的核心指标之一,面积功率密度决定了微电池与应用于物联网的微电子器件集成时所需的面积.目前,由于微电子器件尺寸有限,微电池的实际应用受到低面积功率密度的限制.本文研究发现,经过原位等离子体预处理衬底后,溅射的铁氧硫...作为微电池的核心指标之一,面积功率密度决定了微电池与应用于物联网的微电子器件集成时所需的面积.目前,由于微电子器件尺寸有限,微电池的实际应用受到低面积功率密度的限制.本文研究发现,经过原位等离子体预处理衬底后,溅射的铁氧硫化物薄膜(FeOxSy)具备超高功率特性.这种原位等离子体预处理可作为一种通用的界面优化策略来抑制长循环过程中的机械衰变.该正极薄膜展现出极高的功率密度和稳定的循环性能,这是由其高度的结构完整性(强大的界面粘附性和应力释放的岛)、完美的电化学可逆性以及近表面电荷交换(赝电容锂存储机制)的协同作用导致的.预处理的FeOxSy薄膜可以输出高达14.6 mW cm-2的功率密度和291μW h cm^(-2)μm^(-1)的体积能量密度.制备得到的正极薄膜的功率密度优于已报道的具有相当面积容量的溅射薄膜.本工作提出了一种简单且高效的预处理方法来制备具有超高功率密度且稳定的微电池薄膜电极.展开更多
Magnetron sputtering was used to coat various metals on micropowder surfaces. By using this method, the fine particles are better dispersed and can therefore be coated more homogeneously. The micro-powders used includ...Magnetron sputtering was used to coat various metals on micropowder surfaces. By using this method, the fine particles are better dispersed and can therefore be coated more homogeneously. The micro-powders used include cenospheres from fly ash of coal-burning electric power plants （diameter 40-200 μm and particle density 0.7 ± 0.1 g/cm^3）, as well as carborundum particles of different sizes. Aluminum, silver, copper, cobalt and nickel were used as the coating metals. Tests showed that the coated metal film was compact adhering tightly on the base powders, and the coated powders possess adequate flow properties.展开更多
Hierarchical Cr Co Ni medium entropy alloy(MEA)thin films with a dual-phase face-centred cubic(FCC)and hexagonal closed-packed(HCP)nanostructure were prepared on M2 steel substrates by closed field unbalanced magnetro...Hierarchical Cr Co Ni medium entropy alloy(MEA)thin films with a dual-phase face-centred cubic(FCC)and hexagonal closed-packed(HCP)nanostructure were prepared on M2 steel substrates by closed field unbalanced magnetron sputtering.Nanoindentation tests show an ultra-high hardness of 9.5 GPa,attributable to large amounts of innate planar defects(i.e.,growth twins and stacking faults)impeding dislocation motion in the coatings.A deep analysis of undeformed and post-mortem samples reveals grain refinement as the dominant deformation mechanism in FCC dominated regions,while phase transformation and shear banding played major roles in regions occupied by HCP phase.The grain refinement was facilitated by twin/matrix lamellae,with dislocations piling up and arranging into interconnecting grain boundaries.The shear banding was accelerated by innate planar defects in the HCP phase due to a lack of slip systems.Of particular interest is the observation of HCP→FCC phase transformation,which was catalysed by deformation-induced grain reorientation with innate stacking faults acting as embryos to grow the FCC phase.The results of this work suggest that multiple deformation pathways could be activated in Cr Co Ni coatings with assistance of growth defects,thereby imparting these technically important coatings appreciable ductility.展开更多
Al-doped ZnO （AZO） target was prepared by hot pressing using ZnO and Al2O3 powder in mass ratio of 98：2.The effects of hot pressing conditions including temperature,pressure and preserving time on relative density ...Al-doped ZnO （AZO） target was prepared by hot pressing using ZnO and Al2O3 powder in mass ratio of 98：2.The effects of hot pressing conditions including temperature,pressure and preserving time on relative density were investigated.Pore evolution and phase structure change during densification process were studied.The results show that AZO target with super high relative density of 99% was prepared by two-stage hot pressing method under pressure of 35MPa,temperature of 1 050℃ and 1 150℃ with preserving time of 1 h,respectively.At temperature around 1 050℃,the number of isolated pore wasminimum.At temperature lower than 900℃,there existed Al2O3 phase.At temperature higher than 1 000℃,ZnAl2O4 phase was generated and its content was increased with temperature increasing.Hot pressing method had the advantage over pressureless sintering that the content of ZnAl2O4 was lower and sintering temperature could be also lower.With increasing the hot pressing temperature and preserving time,the electric resistivity of AZO target decreased greatly.A low resistivity of 3 10-3 cm was achieved under the temperature of 1 100℃,pressure of 35MPa and preserving time of 10 h.展开更多
SrZrS_(3)is a promising chalcogenide perovskite with unique advantages including high abundance of consisting elements,high chemical stability,strong light absorption above its direct band gap,excellent carrier transp...SrZrS_(3)is a promising chalcogenide perovskite with unique advantages including high abundance of consisting elements,high chemical stability,strong light absorption above its direct band gap,excellent carrier transport ability.While unfortunately,due to the lack of breakthroughs in its thin film synthesis technique,its optoelectronic properties are not fully investigated,not to mention the device applications.In this work,large-area and uniform SrZrS_(3)thin film(5 cm×5 cm)was prepared by facile sputtering method,followed by a post-annealing treatment at a high temperature of 1000℃for 2–12 h under CS_(2)atmosphere.All SrZrS_(3)samples prepared adopt distorted orthorhombic structure with pnma space group and have high crystallinity.In addition,the band gap of SrZrS_(3)thin film is measured to be 2.29 eV,higher than that of the powder form(2.06 eV).Importantly,the light absorption coefficient of SrZrS_(3)thin film reaches over 105 cm^(−1),the carrier mobility is as high as 106 cm^(2)/(V∙s).The above advantages allow us to use the SrZrS_(3)thin film as photoactive layer for photodetector applications.Finally,a symmetrically structured photoconductive detector was fabricated,performing a high responsivity of 8 A/W(405 nm light excitation).These inspiring results promise the glorious application potential of SrZrS_(3)thin film in photodetectors,solar cells,other optoelectronic devices.展开更多
基金supported by the Award Program for Fujian Minjiang Scholar Professorship,the National Natural Science Foundation of China(11704071 and 51871188)the Excellent Youth Foundation of Fujian Scientific Committee(2019J06008)+1 种基金Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZR146)Fujian Provincial Department of Industry and Information Technology(82318075)。
文摘作为微电池的核心指标之一,面积功率密度决定了微电池与应用于物联网的微电子器件集成时所需的面积.目前,由于微电子器件尺寸有限,微电池的实际应用受到低面积功率密度的限制.本文研究发现,经过原位等离子体预处理衬底后,溅射的铁氧硫化物薄膜(FeOxSy)具备超高功率特性.这种原位等离子体预处理可作为一种通用的界面优化策略来抑制长循环过程中的机械衰变.该正极薄膜展现出极高的功率密度和稳定的循环性能,这是由其高度的结构完整性(强大的界面粘附性和应力释放的岛)、完美的电化学可逆性以及近表面电荷交换(赝电容锂存储机制)的协同作用导致的.预处理的FeOxSy薄膜可以输出高达14.6 mW cm-2的功率密度和291μW h cm^(-2)μm^(-1)的体积能量密度.制备得到的正极薄膜的功率密度优于已报道的具有相当面积容量的溅射薄膜.本工作提出了一种简单且高效的预处理方法来制备具有超高功率密度且稳定的微电池薄膜电极.
文摘Magnetron sputtering was used to coat various metals on micropowder surfaces. By using this method, the fine particles are better dispersed and can therefore be coated more homogeneously. The micro-powders used include cenospheres from fly ash of coal-burning electric power plants （diameter 40-200 μm and particle density 0.7 ± 0.1 g/cm^3）, as well as carborundum particles of different sizes. Aluminum, silver, copper, cobalt and nickel were used as the coating metals. Tests showed that the coated metal film was compact adhering tightly on the base powders, and the coated powders possess adequate flow properties.
基金financially supported by the Australian Research Council Discovery Projects Grant (DP160104632)by an Australian Government Research Training Program (RTP) Scholarship.
文摘Hierarchical Cr Co Ni medium entropy alloy(MEA)thin films with a dual-phase face-centred cubic(FCC)and hexagonal closed-packed(HCP)nanostructure were prepared on M2 steel substrates by closed field unbalanced magnetron sputtering.Nanoindentation tests show an ultra-high hardness of 9.5 GPa,attributable to large amounts of innate planar defects(i.e.,growth twins and stacking faults)impeding dislocation motion in the coatings.A deep analysis of undeformed and post-mortem samples reveals grain refinement as the dominant deformation mechanism in FCC dominated regions,while phase transformation and shear banding played major roles in regions occupied by HCP phase.The grain refinement was facilitated by twin/matrix lamellae,with dislocations piling up and arranging into interconnecting grain boundaries.The shear banding was accelerated by innate planar defects in the HCP phase due to a lack of slip systems.Of particular interest is the observation of HCP→FCC phase transformation,which was catalysed by deformation-induced grain reorientation with innate stacking faults acting as embryos to grow the FCC phase.The results of this work suggest that multiple deformation pathways could be activated in Cr Co Ni coatings with assistance of growth defects,thereby imparting these technically important coatings appreciable ductility.
基金Project(31001) supported by the Technology Development Foundation of Ministry of Science and Technology,China
文摘Al-doped ZnO （AZO） target was prepared by hot pressing using ZnO and Al2O3 powder in mass ratio of 98：2.The effects of hot pressing conditions including temperature,pressure and preserving time on relative density were investigated.Pore evolution and phase structure change during densification process were studied.The results show that AZO target with super high relative density of 99% was prepared by two-stage hot pressing method under pressure of 35MPa,temperature of 1 050℃ and 1 150℃ with preserving time of 1 h,respectively.At temperature around 1 050℃,the number of isolated pore wasminimum.At temperature lower than 900℃,there existed Al2O3 phase.At temperature higher than 1 000℃,ZnAl2O4 phase was generated and its content was increased with temperature increasing.Hot pressing method had the advantage over pressureless sintering that the content of ZnAl2O4 was lower and sintering temperature could be also lower.With increasing the hot pressing temperature and preserving time,the electric resistivity of AZO target decreased greatly.A low resistivity of 3 10-3 cm was achieved under the temperature of 1 100℃,pressure of 35MPa and preserving time of 10 h.
基金the National Natural Science Foundation of China(Nos.62104215 and 12074347)China Postdoctoral Science Foundation(Nos.2020M672257 and 2020TQ0286)+1 种基金Natural Science Foundation of Henan Province of China(No.202300410439)Department of Science and Technology of Henan Province of China(No.202102210214).
文摘SrZrS_(3)is a promising chalcogenide perovskite with unique advantages including high abundance of consisting elements,high chemical stability,strong light absorption above its direct band gap,excellent carrier transport ability.While unfortunately,due to the lack of breakthroughs in its thin film synthesis technique,its optoelectronic properties are not fully investigated,not to mention the device applications.In this work,large-area and uniform SrZrS_(3)thin film(5 cm×5 cm)was prepared by facile sputtering method,followed by a post-annealing treatment at a high temperature of 1000℃for 2–12 h under CS_(2)atmosphere.All SrZrS_(3)samples prepared adopt distorted orthorhombic structure with pnma space group and have high crystallinity.In addition,the band gap of SrZrS_(3)thin film is measured to be 2.29 eV,higher than that of the powder form(2.06 eV).Importantly,the light absorption coefficient of SrZrS_(3)thin film reaches over 105 cm^(−1),the carrier mobility is as high as 106 cm^(2)/(V∙s).The above advantages allow us to use the SrZrS_(3)thin film as photoactive layer for photodetector applications.Finally,a symmetrically structured photoconductive detector was fabricated,performing a high responsivity of 8 A/W(405 nm light excitation).These inspiring results promise the glorious application potential of SrZrS_(3)thin film in photodetectors,solar cells,other optoelectronic devices.
