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Influence of monovalent Bi^+doping on real composition,point defects,and photoluminescence in TlCdCl3 and TlCdI3 single crystals 被引量:4
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作者 Daria N.Vtyurina Polina A.Eistrikh-Geller +5 位作者 Galina M.Kuz mlcheva Victor B.Rybakov Evgeny V.Khramov Irina A.Kaurova Dmitry Yu.Chernyshov Vladimir N.Korchak 《Science China Materials》 SCIE EI CSCD 2017年第12期1253-1263,共11页
The structural features and real compositions with point defects of Bi+-doped TlCdCl_3 and TlCdI_3 single crystals, grown by the Bridgman-Stockbarger technique, are first studied using the X-ray diffraction, X-ray syn... The structural features and real compositions with point defects of Bi+-doped TlCdCl_3 and TlCdI_3 single crystals, grown by the Bridgman-Stockbarger technique, are first studied using the X-ray diffraction, X-ray synchrotron radiation, and EXAFS/XANES spectroscopy. In the structures of Bi^+-doped TlCdCl_3 and TlCdI_3 crystals, the Cd, Cl, and I sites are found to be defect-free. The vacancies in the Tl sites and interstitial Bi atoms located in the vicinity of the Tl sites are detected in the structures of both samples. In the Bi^+-doped TlCdCl_3, the presence of a small amount of Bi^+ ions in the Tl^+ sites is possible. The correlation between photoluminescence bands and point defects in the refined structures are determined. Photoluminescence spectra and decay kinetics of the Bi+-doped TlCdCl_3 and TlCdI_3 demonstrate that they are attractive materials for potential applications in photonics. 展开更多
关键词 single crystal growth DOPING crystal structure point defects PHOTOLUMINESCENCE
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Bonding Character and Formation Energy of Point Defects of He and Vacancy on (001) Surface of bcc Iron by First Principle Calculations 被引量:1
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作者 Jun CAI Daogang LU 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2013年第1期25-32,共8页
The structure and energy of He impurities and vacancy on (001) surface of bcc iron are investigated by an ab initio method. Three cases for stabilities of a He atom at the surface are found: some of He atoms at sur... The structure and energy of He impurities and vacancy on (001) surface of bcc iron are investigated by an ab initio method. Three cases for stabilities of a He atom at the surface are found: some of He atoms at surface atomic layers (SAL) relax into vacuum gap; some of surface He atoms at octahedral interstitial site relax into more stable tetrahedral interstitial site; some of surface He atoms still stay at tetrahedral interstitial site. The un-stability of the He atom at the surface system can be explained by deformation mechanism of charge densities and electronic densities of states. It is found that formation energy of the point defects from the topmost SAL to bulk-like atomic layer increase gradually, for example, the formation energies of a monovacancy at the first five topmost SALs are equal to 0.33, 1.56, 2.04, 2.02 and 2.11 eV, respectively. The magnetic moments of Fe atoms in the surface atomic layers are also calculated. 展开更多
关键词 ab initio calculations single point defects bcc Fe (001) surface ELECTRONICSTRUCTURE
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本征点缺陷对硅材料响应特性的影响分析
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作者 吕彤 张蓉竹 《光学学报》 EI CAS CSCD 北大核心 2023年第21期229-236,共8页
针对硅基材料在1319 nm激光辐照下产生带外响应的问题,研究了硅材料中的本征点缺陷对响应特性的影响。根据第一性原理建立了晶胞模型,比较了几种典型点缺陷状态下硅材料的能级分布特性,在此基础上分析了本征点缺陷对硅材料光电响应特性... 针对硅基材料在1319 nm激光辐照下产生带外响应的问题,研究了硅材料中的本征点缺陷对响应特性的影响。根据第一性原理建立了晶胞模型,比较了几种典型点缺陷状态下硅材料的能级分布特性,在此基础上分析了本征点缺陷对硅材料光电响应特性的影响。结果表明:空位和自间隙原子两类缺陷都能够改变硅材料的能带结构和响应特性。532 nm激光辐照时,硅基光敏单元的输出饱和阈值明显降低。当辐照波长为1319 nm时,硅材料产生明显的带外响应,其中贡献最大的是四面体间隙缺陷。此时材料带隙消失,吸收系数高达50391 cm^(-1),折射率减小约25.99%,因此硅材料在1319 nm处的量子效率值最大,导致光电响应最为强烈,输出饱和阈值最小,为0.0015 W·cm^(-2)。 展开更多
关键词 材料 单晶硅 光电响应 本征点缺陷 第一性原理
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拉速对12英寸单晶硅点缺陷分布影响的动态模拟仿真研究 被引量:2
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作者 年夫雪 黄嘉丽 +2 位作者 邓康 任忠鸣 吴亮 《稀有金属》 EI CAS CSCD 北大核心 2018年第6期634-639,共6页
半导体单晶生长过程中伴随大量的空穴性和间隙性本征点缺陷,这些本征缺陷在单晶生长过程中随着晶体温度的降低不断复合或湮灭形成纳米级空洞型或位错、层错等缺陷,会对硅片质量及后续的器件性能产生严重影响。利用计算机模拟仿真技术对1... 半导体单晶生长过程中伴随大量的空穴性和间隙性本征点缺陷,这些本征缺陷在单晶生长过程中随着晶体温度的降低不断复合或湮灭形成纳米级空洞型或位错、层错等缺陷,会对硅片质量及后续的器件性能产生严重影响。利用计算机模拟仿真技术对12英寸半导体直拉单晶硅生长过程的传热及点缺陷进行了动态模拟仿真计算。动态仿真计算过程中分别采用了恒定及连续变化的拉速,以研究单晶直拉速度对点缺陷分布的影响。研究结果表明,生长速度较快时,晶体内部主要以空穴性点缺陷为主;当生长速度逐步降低,晶体内部空穴性缺陷区域逐渐缩小;通过合适的拉速控制及V/G理论,使用点缺陷动态模拟仿真计算可为生长特定点缺陷分布甚至无点缺陷硅单晶工艺提供有效依据。 展开更多
关键词 12英寸单晶硅 动态模拟 点缺陷
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Effects of gamma ray strong irradiation in single crystal LiF 被引量:1
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作者 HOU Bi-Hui LI Zhi-Wei +1 位作者 YAO Kun CAI Zhang-Shun(Department of Physics, University of Science and Technology of China, Hefei 230026)GE Yu-Xiang(Anhui Institute of Optics and Fine Mechanics, the Chinese Academy of Sciences,Hefei 230031)Chen Yu-Tao(National 《Nuclear Science and Techniques》 SCIE CAS CSCD 2000年第2期101-104,共4页
The electron spin resonance, transmission and reflection spectra showed that a steadily electron-type paramagnetic complex color point defect Fn center is produced by 60Co γ-ray strong dose irradiation in a single cr... The electron spin resonance, transmission and reflection spectra showed that a steadily electron-type paramagnetic complex color point defect Fn center is produced by 60Co γ-ray strong dose irradiation in a single crystal LiF. The γ-ray irradiation dose is too large to recognize any character peak of F2, F2, F2, and F3 centers in the transmission and reflection spectra of the single crystal. LiF: Fn is opaque when wavelength is shorter than about 750nm and has not refiection when wavelength is shorter than about 800nm. The Fn center has a wide ESR peak with ΔBpp of 8 millitesla and the effect g-factor is 1.998±0.002. 展开更多
关键词 Γ射线照射 氟化锂单晶 钴60 电子顺磁性配合物 高能辐射
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KCl:Pb^(2+)单晶中的低频喇曼信号及相应的点缺陷
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作者 王应宗 付克德 李乃英 《陕西师大学报(自然科学版)》 CSCD 1991年第4期26-30,共5页
在绝对温度77K经x射线辐照后的KCl:Pb^(2+)单晶中观察到一个频移为30cm^(-1)的低频喇曼信号.结合测量信号强度随x射线辐照时间的变化及F带光对相应的点缺陷的影响,推断这一低频信号可能起因于被杂质铅稳定的填隙氯离子的局域振动.
关键词 单晶 喇曼散射 点缺陷 KCl:Pb^2+
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