We have analyzed the effective oxide thickness (EOT) of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional S...We have analyzed the effective oxide thickness (EOT) of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional Si02 gate insulator with a material that has a much higher dielectric constant (high-k) gate, materials like Si3N4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier (Natori) approach, which is composed of several matlab scripts. Our results show that hafnium oxide (HfO2) gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of lifO2 is found to be 0.4 nm.展开更多
We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective ...We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.展开更多
We investigated single-electron tunneling through single and coupling dopant-induced quantum dots(QDs) in silicon junctionless nanowire transistor(JNT) by varying temperatures and bias voltages. We observed that two p...We investigated single-electron tunneling through single and coupling dopant-induced quantum dots(QDs) in silicon junctionless nanowire transistor(JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.展开更多
We demonstrate the direct biosensing of the Ebola VP40 matrix protein, using a memristor mode of a liquid-integrated nanodevice, based on a large array of honeycomb-shaped silicon nanowires. To shed more light on the ...We demonstrate the direct biosensing of the Ebola VP40 matrix protein, using a memristor mode of a liquid-integrated nanodevice, based on a large array of honeycomb-shaped silicon nanowires. To shed more light on the principle of biodetection using memristors, we engineered the opening of the current-minima voltage gap VG by involving the third gap-control electrode (gate voltage, VG) into the system. The primary role of VG is to mimic the presence of the charged species of the desired sign at the active area of the sensor. We further showed the advantages of biodetection with an initially opened controlled gap (Vc~ ~a 0), which allows the detection of the lowest concentrations of the biomolecules carrying arbitrary positive or negative charges; this feature was not present in previous configurations. We compared the bio-memristor performance, in terms of its detection range and sensitivity, to that of the already-known field-effect transistor (FET) mode by operating the same device. To our knowledge, this is the first demonstration of Ebola matrix protein detection using a nanoscaled electrical sensor.展开更多
基金supported by the Council of Scientific & Industrial Research(CSIR),India under the SRF scheme(No.08/237(0005)/2012-EMR-I)
文摘We have analyzed the effective oxide thickness (EOT) of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional Si02 gate insulator with a material that has a much higher dielectric constant (high-k) gate, materials like Si3N4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier (Natori) approach, which is composed of several matlab scripts. Our results show that hafnium oxide (HfO2) gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of lifO2 is found to be 0.4 nm.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0200503)
文摘We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.
基金Project supported by the National Key R&D Program of China(Grant No.2016YFA0200503)
文摘We investigated single-electron tunneling through single and coupling dopant-induced quantum dots(QDs) in silicon junctionless nanowire transistor(JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.
文摘We demonstrate the direct biosensing of the Ebola VP40 matrix protein, using a memristor mode of a liquid-integrated nanodevice, based on a large array of honeycomb-shaped silicon nanowires. To shed more light on the principle of biodetection using memristors, we engineered the opening of the current-minima voltage gap VG by involving the third gap-control electrode (gate voltage, VG) into the system. The primary role of VG is to mimic the presence of the charged species of the desired sign at the active area of the sensor. We further showed the advantages of biodetection with an initially opened controlled gap (Vc~ ~a 0), which allows the detection of the lowest concentrations of the biomolecules carrying arbitrary positive or negative charges; this feature was not present in previous configurations. We compared the bio-memristor performance, in terms of its detection range and sensitivity, to that of the already-known field-effect transistor (FET) mode by operating the same device. To our knowledge, this is the first demonstration of Ebola matrix protein detection using a nanoscaled electrical sensor.