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Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric 被引量:1
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作者 S.Theodore Chandra N.B.Balamurugan 《Journal of Semiconductors》 EI CAS CSCD 2014年第4期48-51,共4页
We have analyzed the effective oxide thickness (EOT) of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional S... We have analyzed the effective oxide thickness (EOT) of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional Si02 gate insulator with a material that has a much higher dielectric constant (high-k) gate, materials like Si3N4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier (Natori) approach, which is composed of several matlab scripts. Our results show that hafnium oxide (HfO2) gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of lifO2 is found to be 0.4 nm. 展开更多
关键词 high-k dielectric hafnium oxide silicon nanowire transistor effective oxide thickness
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Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor
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作者 Ya-Mei Dou Wei-Hua Han +4 位作者 Yang-Yan Guo Xiao-Song Zhao Xiao-Di Zhang Xin-Yu Wu Fu-Hua Yang 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第6期357-360,共4页
We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective ... We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering. 展开更多
关键词 effective SUBBAND MOBILITY thermal activation COULOMB scattering silicon nanowire transistor
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Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor
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作者 Xiao-Di Zhang Wei-Hua Han +5 位作者 Wen Liu Xiao-Song Zhao Yang-Yan Guo Chong Yang Jun-Dong Chen Fu-Hua Yang 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第12期315-319,共5页
We investigated single-electron tunneling through single and coupling dopant-induced quantum dots(QDs) in silicon junctionless nanowire transistor(JNT) by varying temperatures and bias voltages. We observed that two p... We investigated single-electron tunneling through single and coupling dopant-induced quantum dots(QDs) in silicon junctionless nanowire transistor(JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature. 展开更多
关键词 silicon nanowire transistor single electron tunneling dopant-induced quantum dots tunneling current spectroscopy
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适于16纳米及以下技术代的新型器件研究-2013年度总结报告
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作者 黄如 《科技创新导报》 2016年第8期171-172,共2页
针对半导体器件进入16 nm及以下技术代将面临的可制造性难度大、功耗限制、性能退化等核心问题,重点开展了新型围栅纳米线器件、新型超低功耗TFET器件、高迁移率沟道器件、闪存器件以及纳米尺度器件的可靠性及涨落性研究,为新型器件在... 针对半导体器件进入16 nm及以下技术代将面临的可制造性难度大、功耗限制、性能退化等核心问题,重点开展了新型围栅纳米线器件、新型超低功耗TFET器件、高迁移率沟道器件、闪存器件以及纳米尺度器件的可靠性及涨落性研究,为新型器件在将来纳米集成电路中的应用奠定了基础。在纳米线器件研究方面,设计了侧墙转移法和TMAH各向异性腐蚀法制备超精细硅纳米线的可控工艺,并进行了实验验证;建立了自限制氧化法硅纳米线制备工艺理论模型,可对工艺进行精确预测;提出了一种原子层掺杂结构可有效调控纳米线器件的阈值电压,同时避免了迁移率的损失;研究了纳米线器件中的GIDL电流机制,提出了抑制GIDL电流的优化方法;提出了一套新的器件-电路优化设计方案,针对纳米线器件在数字电路、模拟/射频电路中的应用分别进行优化设计,得到了相应的设计窗口。在新型低功耗器件研究方面,提出了一种结调制型TFET,显著提升了器件的亚阈特性和开态电流;通过引入pocket层进一步优化了器件结构,实验制备获得了非常低的SS(36mV/dec)和高的开态电流。提出了一种隧穿触发注入场效应晶体管,能同时实现高开态电流、低泄漏电流和陡直的亚阈特性。在纳米尺度MOS器件的可靠性与涨落性研究方面,提出了由AC NBTI引入的工作循环间涨落的两种重要来源的表征方法,实验发现了AC NBTI退化及其涨落的频率依赖性的新现象,建立了物理模型。研究了多栅新器件中的AC RTN,发现比平面器件中的AC RTN活跃程度增强。提出了一种新的AC RTN表征方法,可拓展RTN的栅压探测范围区域。在高迁移率器件研究方面,提出了两种氮等离子体处理方法来提高栅介质/沟道界面质量,进行了实验验证;采用P/Sb共注入技术既有利于提升Ni Ge薄膜质量,也利于电学性能的提升。针对工艺集成中的关键� 展开更多
关键词 纳米尺度 硅纳米线器件 低功耗 高迁移率 闪存器件
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Ultrasensitive detection of Ebola matrix protein in a memristor mode
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作者 Bergoi Ibarlucea Teuku Fawzul Akbar +6 位作者 Kihyun Kim Taiuk Rim Chang-Ki Baek Alon Ascoli Ronald Tetzlaff Larysa Baraban Gianaurelio Cuniberti 《Nano Research》 SCIE EI CAS CSCD 2018年第2期1057-1068,共12页
We demonstrate the direct biosensing of the Ebola VP40 matrix protein, using a memristor mode of a liquid-integrated nanodevice, based on a large array of honeycomb-shaped silicon nanowires. To shed more light on the ... We demonstrate the direct biosensing of the Ebola VP40 matrix protein, using a memristor mode of a liquid-integrated nanodevice, based on a large array of honeycomb-shaped silicon nanowires. To shed more light on the principle of biodetection using memristors, we engineered the opening of the current-minima voltage gap VG by involving the third gap-control electrode (gate voltage, VG) into the system. The primary role of VG is to mimic the presence of the charged species of the desired sign at the active area of the sensor. We further showed the advantages of biodetection with an initially opened controlled gap (Vc~ ~a 0), which allows the detection of the lowest concentrations of the biomolecules carrying arbitrary positive or negative charges; this feature was not present in previous configurations. We compared the bio-memristor performance, in terms of its detection range and sensitivity, to that of the already-known field-effect transistor (FET) mode by operating the same device. To our knowledge, this is the first demonstration of Ebola matrix protein detection using a nanoscaled electrical sensor. 展开更多
关键词 memristor biosensor CAPACITANCE honeycomb nanowires silicon nanowire fieldeffect transistor VP40 matrix protein Ebola detection
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一种在硅材料表面组装金纳米颗粒的新方法
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作者 张栋 肖淼 +2 位作者 马迅 程国胜 张兆春 《材料导报》 EI CAS CSCD 北大核心 2017年第2期25-28,50,共5页
以氯金酸、L-半胱氨酸为反应试剂,利用内电流和金硫自组装效应,在硅材料表面组装了较为均一的金纳米颗粒,并利用荧光分析与硅纳米线场效应晶体管对该方法进行了相关验证。结果表明:经氢氟酸处理后的硅材料,在氯金酸和L-半胱氨酸混合溶... 以氯金酸、L-半胱氨酸为反应试剂,利用内电流和金硫自组装效应,在硅材料表面组装了较为均一的金纳米颗粒,并利用荧光分析与硅纳米线场效应晶体管对该方法进行了相关验证。结果表明:经氢氟酸处理后的硅材料,在氯金酸和L-半胱氨酸混合溶液中反应3min可在硅表面得到较为均匀、稳定的金纳米颗粒层,其中,氯金酸浓度为0.5mmol/L,氯金酸和L-半胱氨酸浓度比为3∶1。荧光分析表明该方法组装的金颗粒表面已氨基功能化,使得金纳米颗粒修饰的硅材料在应用于生物检测时可直接醛基化修饰蛋白,简化了实验操作。同时,该方法可以在硅纳米线场效应晶体管中特异性组装金纳米颗粒,有力地支持了相关器件在疾病检测方面的应用。 展开更多
关键词 金纳米颗粒 硅材料 荧光分析 硅纳米线场效应晶体管
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