首先对羰基铁进行点腐蚀得到多孔羰基铁,然后采用St?ber法和原位聚合法将SiO_2和导电高分子聚吡咯包覆在多孔羰基铁表面,制备多孔羰基铁/SiO_2/聚吡咯电磁复合吸波材料。采用XRD、SEM、TEM、FT-IR对样品结构、微观形貌进行了表征,在网...首先对羰基铁进行点腐蚀得到多孔羰基铁,然后采用St?ber法和原位聚合法将SiO_2和导电高分子聚吡咯包覆在多孔羰基铁表面,制备多孔羰基铁/SiO_2/聚吡咯电磁复合吸波材料。采用XRD、SEM、TEM、FT-IR对样品结构、微观形貌进行了表征,在网络分析仪中采用同轴法测试样品电磁参数,并根据传输线理论研究了2~18 GHz微波频段内吡咯含量及涂层厚度对样品吸波性能的影响。实验结果表明:制备的多孔羰基铁/SiO_2/聚吡咯复合电磁吸波材料具有核壳结构;随着吡咯加入量的增加,吸波材料吸收峰逐渐向低频方向移动;当涂层厚度为3.5 mm、吡咯加入量为6%(w/w)时,在9.44~17.56 GHz范围内反射率均低于-10 d B,频带宽度为8.12 GHz,损耗反射率达到-23 d B。良好的吸波性能归因于复合物有效的阻抗匹配特性及多重界面极化效应,多孔羰基铁/SiO_2/聚吡咯是一种轻质、宽频、强吸收的吸波材料。展开更多
Cu^2＋-doped nanostructured TiO2-coated SiO2 （TiO2/SiO2） particles were prepared by the layer-by-layer assembly technique and their photocatalytic property was studied. TiO2 colloids were synthesized by the sol-gel ...Cu^2＋-doped nanostructured TiO2-coated SiO2 （TiO2/SiO2） particles were prepared by the layer-by-layer assembly technique and their photocatalytic property was studied. TiO2 colloids were synthesized by the sol-gel method using TiOSO4 as a precursor. The experimental results showed that TiO2 nanopowders on the surface of SiO2 particles were well distributed and compact. The amount of TiO2 increased with the increase in coating layers. The shell structure appeared to be composed of anatase titania nanocrystals at 550℃. The 2-layer coated TiO2 particles on the surface showed a higher degradation rate compared with all the different-layer samples. The photocatalytic activity of Cu^2＋-doped TiO2/SiO2 was higher than that ofundoped TiO2/SiO2. The optimum dopant content was about 0.10wt%.展开更多
Direct integration of lithium-ion battery （LIB） with electronic devices on the same Si substrate can significantly miniaturize autonomous micro systems. For achieving direct integration, a barrier layer is essential...Direct integration of lithium-ion battery （LIB） with electronic devices on the same Si substrate can significantly miniaturize autonomous micro systems. For achieving direct integration, a barrier layer is essential to be inserted between LIB and the substrate for blocking Li^＋ diffusion. In this paper, the feasibility of thermal SiOa film as the barrier layer is investigated by electrochemical characterization and X-ray photoelectron spectroscopy （XPS）. Due to the negligible side reactions of thermal SiO2 with electrolyte, the solid electrolyte interphase （SEI） layer formed on the surface of the barrier layer is thin and the SEI content mainly consists of hydrocarbon together with slight polyethylene oxide （PEO）, LixPOyFz, and Li2CO3. Although 8-nm thermal SiO2 effectively prevents the substrate from alloying with Li^＋, the whole film changes to Li silicate after electrochemical cycling due to the irreversible chemical reactions of SiO2 with electrolyte. This degrades the performance of the barrier layer against the electrolyte penetration, thus leading to the existence of Li^＋ （in the form of F-Si-Li） and solvent decompositions （with the products of hydrocarbon and PEO） near the barrier layer/substrate interface. Moreover, it is found that the reaction kinetics of thermal SiO2 with electrolyte decrease significantly with increasing the SiO2 thickness and no reactions are found in the bulk of the 30-nm SiO2 film. Therefore, thermal SiO2 with an appropriate thickness is a promising barrier layer for direct integration.展开更多
文摘首先对羰基铁进行点腐蚀得到多孔羰基铁,然后采用St?ber法和原位聚合法将SiO_2和导电高分子聚吡咯包覆在多孔羰基铁表面,制备多孔羰基铁/SiO_2/聚吡咯电磁复合吸波材料。采用XRD、SEM、TEM、FT-IR对样品结构、微观形貌进行了表征,在网络分析仪中采用同轴法测试样品电磁参数,并根据传输线理论研究了2~18 GHz微波频段内吡咯含量及涂层厚度对样品吸波性能的影响。实验结果表明:制备的多孔羰基铁/SiO_2/聚吡咯复合电磁吸波材料具有核壳结构;随着吡咯加入量的增加,吸波材料吸收峰逐渐向低频方向移动;当涂层厚度为3.5 mm、吡咯加入量为6%(w/w)时,在9.44~17.56 GHz范围内反射率均低于-10 d B,频带宽度为8.12 GHz,损耗反射率达到-23 d B。良好的吸波性能归因于复合物有效的阻抗匹配特性及多重界面极化效应,多孔羰基铁/SiO_2/聚吡咯是一种轻质、宽频、强吸收的吸波材料。
基金the Department of Education of Hebei Province, China (No.2005362)
文摘Cu^2＋-doped nanostructured TiO2-coated SiO2 （TiO2/SiO2） particles were prepared by the layer-by-layer assembly technique and their photocatalytic property was studied. TiO2 colloids were synthesized by the sol-gel method using TiOSO4 as a precursor. The experimental results showed that TiO2 nanopowders on the surface of SiO2 particles were well distributed and compact. The amount of TiO2 increased with the increase in coating layers. The shell structure appeared to be composed of anatase titania nanocrystals at 550℃. The 2-layer coated TiO2 particles on the surface showed a higher degradation rate compared with all the different-layer samples. The photocatalytic activity of Cu^2＋-doped TiO2/SiO2 was higher than that ofundoped TiO2/SiO2. The optimum dopant content was about 0.10wt%.
基金This work was supported by the Natural Science Foundation of Jiangsu Province （Grant No. BK20140639） and the National Natural Science Foundation of China （Grant No. 21206070）.
文摘Direct integration of lithium-ion battery （LIB） with electronic devices on the same Si substrate can significantly miniaturize autonomous micro systems. For achieving direct integration, a barrier layer is essential to be inserted between LIB and the substrate for blocking Li^＋ diffusion. In this paper, the feasibility of thermal SiOa film as the barrier layer is investigated by electrochemical characterization and X-ray photoelectron spectroscopy （XPS）. Due to the negligible side reactions of thermal SiO2 with electrolyte, the solid electrolyte interphase （SEI） layer formed on the surface of the barrier layer is thin and the SEI content mainly consists of hydrocarbon together with slight polyethylene oxide （PEO）, LixPOyFz, and Li2CO3. Although 8-nm thermal SiO2 effectively prevents the substrate from alloying with Li^＋, the whole film changes to Li silicate after electrochemical cycling due to the irreversible chemical reactions of SiO2 with electrolyte. This degrades the performance of the barrier layer against the electrolyte penetration, thus leading to the existence of Li^＋ （in the form of F-Si-Li） and solvent decompositions （with the products of hydrocarbon and PEO） near the barrier layer/substrate interface. Moreover, it is found that the reaction kinetics of thermal SiO2 with electrolyte decrease significantly with increasing the SiO2 thickness and no reactions are found in the bulk of the 30-nm SiO2 film. Therefore, thermal SiO2 with an appropriate thickness is a promising barrier layer for direct integration.
