ZnO/diamond-like carbon (DLC) thin films are deposited by pulsed laser deposition (PLD) on Si (111) wafer. Visible room-temperature photoluminescence (PL) is observed from ZnO/DLC thin films by fluorescence spectropho...ZnO/diamond-like carbon (DLC) thin films are deposited by pulsed laser deposition (PLD) on Si (111) wafer. Visible room-temperature photoluminescence (PL) is observed from ZnO/DLC thin films by fluorescence spectrophotometer. The Gaussian curve fitting of PL spectra reveals that the broadband visible emission contains three components with λ=508 nm, 554 nm and 698 nm. The origin and possible mechanism of the visible PL are discussed, and they can be attributed to the PL recombination of ZnO and DLC thin films.展开更多
We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire ...We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire substrate by molecular beam epitaxy. Then it was dealt by putting into 45% NaOH solution at 100℃ for lOmin. By this process a quasi-porous GaN film was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050℃ in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.展开更多
基金supported by the National Natural Science Foundation of China (No.10974077)the Project of Shandong Province Higher Educational Science and Technology Program (No.J08LI04)
文摘ZnO/diamond-like carbon (DLC) thin films are deposited by pulsed laser deposition (PLD) on Si (111) wafer. Visible room-temperature photoluminescence (PL) is observed from ZnO/DLC thin films by fluorescence spectrophotometer. The Gaussian curve fitting of PL spectra reveals that the broadband visible emission contains three components with λ=508 nm, 554 nm and 698 nm. The origin and possible mechanism of the visible PL are discussed, and they can be attributed to the PL recombination of ZnO and DLC thin films.
文摘We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire substrate by molecular beam epitaxy. Then it was dealt by putting into 45% NaOH solution at 100℃ for lOmin. By this process a quasi-porous GaN film was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050℃ in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.
