In this study, CoCrMo alloy was oxidized in plasma environment at the temperatures of 600 ℃ to 800 ℃ for 1 h to 5 h with 100% 02 gas and its tribological behavior was investigated. After the plasma oxidizing process...In this study, CoCrMo alloy was oxidized in plasma environment at the temperatures of 600 ℃ to 800 ℃ for 1 h to 5 h with 100% 02 gas and its tribological behavior was investigated. After the plasma oxidizing process, the compound and diffusion layers were formed on the surface. XRD results show that Cr203, a-Co and ε-Co phases diffracted from the modified layers after plasma oxidizing. The untreated and treated CoCrMo samples were subjected to wear tests both in dry and simulated body fluid conditions, and normal loads of 2 N and 10 N were used. For the sliding wear test, alumina balls were used as counter materials. It was observed that the wear resistance of CoCrMo alloy was increased after the plasma oxidizing process. The lowest wear rate was obtained from the samples that were oxidized at 800 ℃ for 5 h. It was detected that both wear environment and load have significant effects on the wear behavior of this alloy, and the wear resistance of oxidized CoCrMo alloy is higher when oxide-based counterface is used. The wear rates of both untreated and plasma oxidized samples increase under high loads.展开更多
The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record ...The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10^(10)cm^(-2)·eV^(-1)@Ec-0.2 eV)is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation.And high quality SiO2 with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^(-2)·eV^(-1)is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.展开更多
A series of hydrogen-containing a-Si:H/SiO2 multilayers with different a-Si:H sublayer thickness were fabricated by layer-by-layer deposition and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition...A series of hydrogen-containing a-Si:H/SiO2 multilayers with different a-Si:H sublayer thickness were fabricated by layer-by-layer deposition and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition system (PECVD). Optical induced blue emission from the samples was observed by the naked eye at room temperature, which has never been reported in the luminescence study of Si/SiO2 multilayers up to now. Both the photoluminescence (PL) peak and the absorption edge show a blue shift as the a-Si:H sublayer thickness decreases. The origin of the blue emission and the effect of hydrogen are discussed.展开更多
文摘In this study, CoCrMo alloy was oxidized in plasma environment at the temperatures of 600 ℃ to 800 ℃ for 1 h to 5 h with 100% 02 gas and its tribological behavior was investigated. After the plasma oxidizing process, the compound and diffusion layers were formed on the surface. XRD results show that Cr203, a-Co and ε-Co phases diffracted from the modified layers after plasma oxidizing. The untreated and treated CoCrMo samples were subjected to wear tests both in dry and simulated body fluid conditions, and normal loads of 2 N and 10 N were used. For the sliding wear test, alumina balls were used as counter materials. It was observed that the wear resistance of CoCrMo alloy was increased after the plasma oxidizing process. The lowest wear rate was obtained from the samples that were oxidized at 800 ℃ for 5 h. It was detected that both wear environment and load have significant effects on the wear behavior of this alloy, and the wear resistance of oxidized CoCrMo alloy is higher when oxide-based counterface is used. The wear rates of both untreated and plasma oxidized samples increase under high loads.
基金National Natural Science Foundation of China(51775096)Chinese Academy of Sciences WEGO Research Development Plan([2007]006)Fundamental Research Funds for the Central Universities,China(N2003009)。
基金Project supported in part by the National Key Research and Development Program of China(Grant No.2016YFB0100601)the National Natural Science Foundation of China(Grant Nos.61674169 and 61974159)the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences。
文摘The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10^(10)cm^(-2)·eV^(-1)@Ec-0.2 eV)is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation.And high quality SiO2 with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^(-2)·eV^(-1)is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.
文摘A series of hydrogen-containing a-Si:H/SiO2 multilayers with different a-Si:H sublayer thickness were fabricated by layer-by-layer deposition and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition system (PECVD). Optical induced blue emission from the samples was observed by the naked eye at room temperature, which has never been reported in the luminescence study of Si/SiO2 multilayers up to now. Both the photoluminescence (PL) peak and the absorption edge show a blue shift as the a-Si:H sublayer thickness decreases. The origin of the blue emission and the effect of hydrogen are discussed.
