We report our experimental observation of charge domain oscillation in semi-insulating GaAs photocon-ductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device....We report our experimental observation of charge domain oscillation in semi-insulating GaAs photocon-ductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 1012 cm-2. We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.展开更多
A GaAs Photoconductive Semiconductor Switch (PCSS) with a 3-mm gap between the two opposed contact electrodes was developed with carefully chosen GaAs material, mechanical structure design, contact fabrication techniq...A GaAs Photoconductive Semiconductor Switch (PCSS) with a 3-mm gap between the two opposed contact electrodes was developed with carefully chosen GaAs material, mechanical structure design, contact fabrication techniques and its insulation protection. It is charged by a pulse power supply under a bias of 15 kV, illuminated by laser pulses of 1064 nm in wavelength, 56.12 μJ in optical energy per shot and 1 kHz pulse repetition rate (PRR). The GaAs PCSS can last for more than 3.6×106 shots and produce output pulses of 2 MW in peak power, 2 ns pulse duration and 65 ps time jitter from a 50-Ω load of the oscilloscope. When an electric field of 100 kV/cm bias was applied, the peak power of the load was measured at 10 MW. A series of measurements on the voltage conversion rates (VCR) and time jitters have been carried out as the bias voltage increases. In particular, taking into account the dependence of optical absorption coefficient on the bias voltages, the curve of the VCR changes with the bias voltages were analyzed quantitatively.展开更多
光导半导体开关自问世以来 ,以其优良的特性受到人们广泛的关注 ,其应用领域不断地拓展。本文建立了一个光导开关的瞬态响应模型 ,对 Ga As瞬态光电导效应进行了研究 ,重点研究了是光作用过程的 Dember效应和各种重要的复合机制对 Ga A...光导半导体开关自问世以来 ,以其优良的特性受到人们广泛的关注 ,其应用领域不断地拓展。本文建立了一个光导开关的瞬态响应模型 ,对 Ga As瞬态光电导效应进行了研究 ,重点研究了是光作用过程的 Dember效应和各种重要的复合机制对 Ga As光导开关光电导响应的影响。展开更多
To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insul...To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.展开更多
基金This work was supported by the National Natural Sci-ence Foundation of China under Grant No.50077017.
文摘We report our experimental observation of charge domain oscillation in semi-insulating GaAs photocon-ductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 1012 cm-2. We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.
基金supported by the National Natural Science Foundation of China (Grant No.10804016)the Key Laboratory Fund of Transient of Optics and Photonics of China (Grant No.YAK200501)
文摘A GaAs Photoconductive Semiconductor Switch (PCSS) with a 3-mm gap between the two opposed contact electrodes was developed with carefully chosen GaAs material, mechanical structure design, contact fabrication techniques and its insulation protection. It is charged by a pulse power supply under a bias of 15 kV, illuminated by laser pulses of 1064 nm in wavelength, 56.12 μJ in optical energy per shot and 1 kHz pulse repetition rate (PRR). The GaAs PCSS can last for more than 3.6×106 shots and produce output pulses of 2 MW in peak power, 2 ns pulse duration and 65 ps time jitter from a 50-Ω load of the oscilloscope. When an electric field of 100 kV/cm bias was applied, the peak power of the load was measured at 10 MW. A series of measurements on the voltage conversion rates (VCR) and time jitters have been carried out as the bias voltage increases. In particular, taking into account the dependence of optical absorption coefficient on the bias voltages, the curve of the VCR changes with the bias voltages were analyzed quantitatively.
基金supported in part by the Huxiang Youth Talent Support Program(No.2020RC3030)in part by the Foundation of State Key Laboratory of Pulsed Power Laser Technology(Nos.SKL2021ZR02 and SKL2021KF05)。
文摘To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.
