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CMOS high linearity PA driver with an on-chip transformer for W-CDMA application
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作者 付健 梅年松 +1 位作者 黄煜梅 洪志良 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第9期106-111,共6页
A fully integrated high linearity differential power amplifier driver with an on-chip transformer in a standard 0.13-μm CMOS process for W-CDMA application is presented.The transformer not only accomplishes output im... A fully integrated high linearity differential power amplifier driver with an on-chip transformer in a standard 0.13-μm CMOS process for W-CDMA application is presented.The transformer not only accomplishes output impedance matching,but also acts as a balun for converting differential signals to single-ended ones.Under a supply voltage of 3.3 V,the measured maximum power is larger than 17 dBm with a peak power efficiency of 21%.The output power at the 1-dB compression point and the power gain are 12.7 dBm and 13.2 dB,respectively. The die size is 0.91×1.12 mm;. 展开更多
关键词 CMOS pa driver on-chip transformer impedance transformation linearity efficiency
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A-3 dBm RF transmitter front-end for 802.11g application
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作者 赵锦鑫 颜峻 石寅 《Journal of Semiconductors》 EI CAS CSCD 2013年第4期69-75,共7页
A 2.4 GHz, direct-conversion RF transmitter front-end with an up converter and PA driver is fabricated in a 0.13/zm CMOS process for the reliable transmission of 54 Mb/s OFDM signals. The front-end output power is -3 ... A 2.4 GHz, direct-conversion RF transmitter front-end with an up converter and PA driver is fabricated in a 0.13/zm CMOS process for the reliable transmission of 54 Mb/s OFDM signals. The front-end output power is -3 dBm while the corresponding EVM is -27 dB which is necessary for the 802.11g standard of EVM at-25 dB. With the adopted gain control strategy the output power changes from -14.3 to -3.7 dBm with every step 0.8 dB (20%) which covers the gain variation due to working temperature and process. A power detector indicates the output power and delivers a voltage to the baseband to control the output power. 展开更多
关键词 802.11 g RF transmitter front-end up converter RFVGA pa driver EVM
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A fully integrated 3.5 GHz CMOS differential power amplifier driver
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作者 许晓冬 杨海钢 +1 位作者 高同强 张洪锋 《Journal of Semiconductors》 EI CAS CSCD 2013年第7期154-159,共6页
A fully integrated CMOS differential power amplifier driver(PAD) is proposed for WiMAX applications. In order to fulfill the differential application requirements,a transmission line transformer is used as the outpu... A fully integrated CMOS differential power amplifier driver(PAD) is proposed for WiMAX applications. In order to fulfill the differential application requirements,a transmission line transformer is used as the output matching network.A differential inductance constitutes an inter-stage matching network.Meanwhile,an on chip balun realizes input matching as well as single-end to differential conversion.The PAD is fabricated in a 0.13μm RFCMOS process.The chip size is 1.1×1.1 mm^2 with all of the matching network integrated on chip. The saturated power is around 10 dBm and power gain is about 12 dB. 展开更多
关键词 CMOS pa power amplifier driver transformer BALUN WIMAX
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