采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致...采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致发光器件(OLEDs).OLEDs的器件结构为indium tin oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine(NPB)/CBP:(t-bt)2Ir(acac)/NPB/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/8-hydroxyquinoline aluminum(Alq3)/Mg∶Ag,从ITO阳极开始的第一层NPB为空穴传输层,第二层超薄的NPB为蓝色发光层,BCP为空穴阻挡层和激子阻挡层,Alq3为电子传输层.结果表明,器件电压在3V启亮,在16.5V时,器件的最高亮度达到15460cd·m-2;在4V时,器件达到最大流明效率为7.5lm·W-1,器件启亮后所发出的白光光谱在低电压时随电压变化有稍微的移动,但是都在白光范围内变化.在电压达到8V后Commission Internationale de l′Eclairage(国际照明委员会)(CIE)色坐标为(0.33,0.32),并且光谱及色坐标稳定,不随电压变化而改变,与最佳的白光坐标(0.33,0.33)几乎重合.同时,从机理上解释了光谱移动和效率衰减的原因,并探讨了载流子陷阱和能量传递的关系.展开更多
In this paper, thickness uniformity of poly（9,9-di-n-octylfluorene） films patterned by inkjet printing was im- proved by the use of solvent mixtures （a solvent with higher volatility, higher surface energy and lowe...In this paper, thickness uniformity of poly（9,9-di-n-octylfluorene） films patterned by inkjet printing was im- proved by the use of solvent mixtures （a solvent with higher volatility, higher surface energy and lower viscosity, with another solvent with lower volatility, lower surface energy and higher viscosity）. The average thickness of inkjet printed poly（9,9-di-n-octylfluorene） films was increased from ca. 30 nm to ca. 100 nm when solvent mixtures were used instead of pure chlorobenzene. More flat PFO films were formed instead of the original films with con- cave-lens like cross-section formed by coffee ring effect. This improvement was explained by combination of in- tense Marangoni flow at early drying process and weak complementary flow at the later drying process formed in the solvent mixture. Patterned poly（9,9-di-n-octylfluorene） films were used for fabrication of electroluminescence devices with improved electronic property. Array of pixels with about 80% effective light-emitting area was ob- tained.展开更多
Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materia...Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials,conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique properties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.展开更多
文摘采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致发光器件(OLEDs).OLEDs的器件结构为indium tin oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine(NPB)/CBP:(t-bt)2Ir(acac)/NPB/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/8-hydroxyquinoline aluminum(Alq3)/Mg∶Ag,从ITO阳极开始的第一层NPB为空穴传输层,第二层超薄的NPB为蓝色发光层,BCP为空穴阻挡层和激子阻挡层,Alq3为电子传输层.结果表明,器件电压在3V启亮,在16.5V时,器件的最高亮度达到15460cd·m-2;在4V时,器件达到最大流明效率为7.5lm·W-1,器件启亮后所发出的白光光谱在低电压时随电压变化有稍微的移动,但是都在白光范围内变化.在电压达到8V后Commission Internationale de l′Eclairage(国际照明委员会)(CIE)色坐标为(0.33,0.32),并且光谱及色坐标稳定,不随电压变化而改变,与最佳的白光坐标(0.33,0.33)几乎重合.同时,从机理上解释了光谱移动和效率衰减的原因,并探讨了载流子陷阱和能量传递的关系.
基金This work was subsidized by the National Natural Science Foundation of China，the Ministry of Science and Technology of China
文摘In this paper, thickness uniformity of poly（9,9-di-n-octylfluorene） films patterned by inkjet printing was im- proved by the use of solvent mixtures （a solvent with higher volatility, higher surface energy and lower viscosity, with another solvent with lower volatility, lower surface energy and higher viscosity）. The average thickness of inkjet printed poly（9,9-di-n-octylfluorene） films was increased from ca. 30 nm to ca. 100 nm when solvent mixtures were used instead of pure chlorobenzene. More flat PFO films were formed instead of the original films with con- cave-lens like cross-section formed by coffee ring effect. This improvement was explained by combination of in- tense Marangoni flow at early drying process and weak complementary flow at the later drying process formed in the solvent mixture. Patterned poly（9,9-di-n-octylfluorene） films were used for fabrication of electroluminescence devices with improved electronic property. Array of pixels with about 80% effective light-emitting area was ob- tained.
基金Research funding from the Shanghai Municipal Education Commission in the framework of the oriental scholar and distinguished professor designationfunding from the National Natural Science Foundation of China(NSFC)
文摘Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials,conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique properties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.
