Nitrogen dioxide(NO2),a hazardous gas with acidic nature,is continuously being liberated in the atmosphere due to human activity.The NO2 sensors based on traditional materials have limitations of high-temperature requ...Nitrogen dioxide(NO2),a hazardous gas with acidic nature,is continuously being liberated in the atmosphere due to human activity.The NO2 sensors based on traditional materials have limitations of high-temperature requirements,slow recovery,and performance degradation under harsh environmental conditions.These limitations of traditional materials are forcing the scientific community to discover future alternative NO2 sensitive materials.Molybdenum disulfide(MoS2)has emerged as a potential candidate for developing next-generation NO2 gas sensors.MoS2 has a large surface area for NO2 molecules adsorption with controllable morphologies,facile integration with other materials and compatibility with internet of things(IoT)devices.The aim of this review is to provide a detailed overview of the fabrication of MoS2 chemiresistance sensors in terms of devices(resistor and transistor),layer thickness,morphology control,defect tailoring,heterostructure,metal nanoparticle doping,and through light illumination.Moreover,the experimental and theoretical aspects used in designing MoS2-based NO2 sensors are also discussed extensively.Finally,the review concludes the challenges and future perspectives to further enhance the gas-sensing performance of MoS2.Understanding and addressing these issues are expected to yield the development of highly reliable and industry standard chemiresistance NO2 gas sensors for environmental monitoring.展开更多
In this work,the two-dimensional MoS2 film was prepared by sulfuring the molybdenum atomic layer on SiO2/Si substrate.The reaction temperature,heating rate,holding time and carrier gas flow rate were inve stigated com...In this work,the two-dimensional MoS2 film was prepared by sulfuring the molybdenum atomic layer on SiO2/Si substrate.The reaction temperature,heating rate,holding time and carrier gas flow rate were inve stigated compre hensively.The quality of MoS2 film was characterized by optical microscopy,atomic fo rce microscopy,Raman and photoluminescence spectro scopy.The characte rization results showed that the optimum synthesis parameters were heating rate of 25℃/min,reaction temperature of 750℃,holding time of 30 min and carrier gas velocity of 100 sccm.The MoS2 gas sensor was fabricated and its gas sensing performance was tested.The test results indicated that the sensor had a good response to both reducing gas(NH3)and oxidizing gas(NO2)at room temperature.The sensitivity to 100 ppm of NO2 was 31.3%,and the response/recovery times were 4 s and 5 s,respectively.In addition,the limit of detection could be as low as 1 ppm.This work helps us to develop low power and integrable room temperature NO2 sensors.展开更多
Novel ZnSe/NiO heterostructure nanocomposites were successfully prepared by one-step hydrothermal method.The ZnSe/NiO-based sensor exhibits a response of~96.47% to 8×10^(-6) NO_(2) at 140℃,which is significantly...Novel ZnSe/NiO heterostructure nanocomposites were successfully prepared by one-step hydrothermal method.The ZnSe/NiO-based sensor exhibits a response of~96.47% to 8×10^(-6) NO_(2) at 140℃,which is significantly higher than those of intrinsic ZnSe-based(no response)and NiO-based(~19.65%)sensors.The theoretical detection limit(LOD)of the sensor is calculated to be 8.91×10^(-9),indicating that the sensor can be applied to detect the ultralow concentrations of NO_(2).The effect of NiO content on the gas-sensing performance of the nanocomposites was investigated in detail.The optimal NiO content in the nanocomposite is determined to be15.16%to achieve the highest response.The as-fabricated sensor also presents an excellent selectivity to several possible interferents such as methanol,ethanol,acetone,benzene,ammonia and formaldehyde.The enhanced sensing performance can be attributed to the formation of p-p heterostructures between ZnSe and NiO,which induces the charge transfer across the interfaces and yields more active sites.展开更多
基金the Department of Atomic Energy(DAE)under Project No.34/20/09/2015/BRNSthe Department of Physics,IIT Ropar for providing financial support and the research facility。
文摘Nitrogen dioxide(NO2),a hazardous gas with acidic nature,is continuously being liberated in the atmosphere due to human activity.The NO2 sensors based on traditional materials have limitations of high-temperature requirements,slow recovery,and performance degradation under harsh environmental conditions.These limitations of traditional materials are forcing the scientific community to discover future alternative NO2 sensitive materials.Molybdenum disulfide(MoS2)has emerged as a potential candidate for developing next-generation NO2 gas sensors.MoS2 has a large surface area for NO2 molecules adsorption with controllable morphologies,facile integration with other materials and compatibility with internet of things(IoT)devices.The aim of this review is to provide a detailed overview of the fabrication of MoS2 chemiresistance sensors in terms of devices(resistor and transistor),layer thickness,morphology control,defect tailoring,heterostructure,metal nanoparticle doping,and through light illumination.Moreover,the experimental and theoretical aspects used in designing MoS2-based NO2 sensors are also discussed extensively.Finally,the review concludes the challenges and future perspectives to further enhance the gas-sensing performance of MoS2.Understanding and addressing these issues are expected to yield the development of highly reliable and industry standard chemiresistance NO2 gas sensors for environmental monitoring.
基金supports from the National Natural Science Foundation of China(Nos.51572173,51602197,51771121 and 51702212)Shanghai Municipal Science and Technology Commission(Nos.19ZR1435200,18511110600 and 19JC1410402)+1 种基金Innovation Program of Shanghai Municipal Education Commission(No.2019-01-07-00-07-E00015)Shanghai Academic/Technology Research Leader Program(No.19XD1422900)。
文摘In this work,the two-dimensional MoS2 film was prepared by sulfuring the molybdenum atomic layer on SiO2/Si substrate.The reaction temperature,heating rate,holding time and carrier gas flow rate were inve stigated compre hensively.The quality of MoS2 film was characterized by optical microscopy,atomic fo rce microscopy,Raman and photoluminescence spectro scopy.The characte rization results showed that the optimum synthesis parameters were heating rate of 25℃/min,reaction temperature of 750℃,holding time of 30 min and carrier gas velocity of 100 sccm.The MoS2 gas sensor was fabricated and its gas sensing performance was tested.The test results indicated that the sensor had a good response to both reducing gas(NH3)and oxidizing gas(NO2)at room temperature.The sensitivity to 100 ppm of NO2 was 31.3%,and the response/recovery times were 4 s and 5 s,respectively.In addition,the limit of detection could be as low as 1 ppm.This work helps us to develop low power and integrable room temperature NO2 sensors.
基金financially supported by the National Natural Science Foundation of China(No.61971085)Dalian Science and Technology Innovation Fund Project(No.2019J12GX048)。
文摘Novel ZnSe/NiO heterostructure nanocomposites were successfully prepared by one-step hydrothermal method.The ZnSe/NiO-based sensor exhibits a response of~96.47% to 8×10^(-6) NO_(2) at 140℃,which is significantly higher than those of intrinsic ZnSe-based(no response)and NiO-based(~19.65%)sensors.The theoretical detection limit(LOD)of the sensor is calculated to be 8.91×10^(-9),indicating that the sensor can be applied to detect the ultralow concentrations of NO_(2).The effect of NiO content on the gas-sensing performance of the nanocomposites was investigated in detail.The optimal NiO content in the nanocomposite is determined to be15.16%to achieve the highest response.The as-fabricated sensor also presents an excellent selectivity to several possible interferents such as methanol,ethanol,acetone,benzene,ammonia and formaldehyde.The enhanced sensing performance can be attributed to the formation of p-p heterostructures between ZnSe and NiO,which induces the charge transfer across the interfaces and yields more active sites.
