The double barrier quantum well（DBQW） resonant tunneling diode（RTD） structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge（1-z）Cz on Si（1-x-y）GexSny heterostructu...The double barrier quantum well（DBQW） resonant tunneling diode（RTD） structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge（1-z）Cz on Si（1-x-y）GexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.展开更多
To improve the logic stability of conventional multi-valued logic（MVL） circuits designed with a GaNbased resonate tunneling diode（RTD）, we proposed a GaN/InGaN/AlGaN multi-quantum well（MQW） RTD. The proposed RTD...To improve the logic stability of conventional multi-valued logic（MVL） circuits designed with a GaNbased resonate tunneling diode（RTD）, we proposed a GaN/InGaN/AlGaN multi-quantum well（MQW） RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green＇s function（NEGF） method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AIGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD8 is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.展开更多
A new lateral insulated-gate bipolar transistor （LIGBT） structure on SOI substrate, called an n-region controlled anode LIGBT （NCA-LIGBT）, is proposed and discussed. The n-region controlled anode concept results i...A new lateral insulated-gate bipolar transistor （LIGBT） structure on SOI substrate, called an n-region controlled anode LIGBT （NCA-LIGBT）, is proposed and discussed. The n-region controlled anode concept results in fast switch speeds, efficient area usage and effective suppression NDR in forward I-V characteristics. Simulation results of the key parameters （n-region doping concentration, length, thickness and p-base doping concentration） show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state voltage drop. The proposed LIGBT is a novel device for power ICs such as PDP scan driver ICs.展开更多
This paper reports the piezoresistive effect of a resonant tunneling diode （RTD） in a microstructure. The fourbeam structure is analyzed and fabricated by positing RTDs at the stress sensitive regions. Stress along ...This paper reports the piezoresistive effect of a resonant tunneling diode （RTD） in a microstructure. The fourbeam structure is analyzed and fabricated by positing RTDs at the stress sensitive regions. Stress along the [110] orienta- tion and [110]ientation induces a change in the RTD＇s current-voltage （I-V） curves,i, e., the meso-piezoresistance variety,mainly in its negative different resistance （NDR） region. By different methods,the mechanic-electric coupling characteristic of RTD is studied and the consistent 10^9Pa^1 piezoresistive coefficients are discovered.展开更多
Sodic soils have immense productivity potential, if managed through proper technology interventions. Biocompost is prepared by composting pressmud (a sugar industry byproduct) received from cane juice filtration and s...Sodic soils have immense productivity potential, if managed through proper technology interventions. Biocompost is prepared by composting pressmud (a sugar industry byproduct) received from cane juice filtration and spent wash received from distilleries through microbial aerobic decomposition and can be used to reclaim sodic soils. Field experiments were conducted during the wet season of 2011 and 2012 to study the effect of incorporation of biocompost in sodic soil with four treatments: T1—Control, T2—Biocompost at 2 t ha-1, T3—Biocompost at 4 t ha-1 and T4—Biocompost at 6 t ha-1. The two promising salt tolerant rice varieties preferred by farmers, Narendra usar 3 and NDR 359 were used as test crops, which can produce yields ranging between 2-4 t ha-1 in soil having a pH range of 9.2 to 10.5. Among the different doses of biocompost tested, application of biocompost at 6 t ha-1 registered highest yields, enabled by a higher biomass, ear bearing tiller (EBT), and grain fertility in both varieties. Narendra usar 3 was more responsive to treatments even at lower doses of biocompost than NDR 359, but NDR 359 yielded slightly higher than Narendra usar 3 in all treatments. Soil health was also improved evidently on better fertility and low soil pH and EC at harvest. Thus, biocompost can be considered as a commercially viable, environmentally acceptable and practically enforceable option for improving the crop productivity and soil fertility status.展开更多
目前共振隧穿二极管(RTD)多值逻辑电路研究采用多个MOSFETs组合,以逼近RTD特性,这是现有逻辑功能验证的不足。针对该问题,通过建立对称双势垒RTD电子输运的解析模型,进而采用SILVACO TCAD对Ga As/Al Ga As基对称DBS RTD器件的电学特性...目前共振隧穿二极管(RTD)多值逻辑电路研究采用多个MOSFETs组合,以逼近RTD特性,这是现有逻辑功能验证的不足。针对该问题,通过建立对称双势垒RTD电子输运的解析模型,进而采用SILVACO TCAD对Ga As/Al Ga As基对称DBS RTD器件的电学特性进行仿真实验研究。根据仿真实验的结果分析总结了势阱和势垒宽度对Ga As/Al Ga As基对称DBS RTD负阻特性影响的规律,并根据MVL电路设计应用的低压、低功耗、适当峰谷电流比和工艺可实现性等要求,通过大量的仿真优化实验提出采用Ga As/Al Ga As基对称DBS RTD实现多值逻辑电路设计所需的对称DBS RTD器件设计参数窗口。展开更多
Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce....Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.展开更多
Based on the non-equilibrium Green＇s method and density functional theory, the magnetic transport of Fe- phthMocyanine dimers with two armchair single-wailed carbon nanotube electrodes is investigated. The results sh...Based on the non-equilibrium Green＇s method and density functional theory, the magnetic transport of Fe- phthMocyanine dimers with two armchair single-wailed carbon nanotube electrodes is investigated. The results show that the system can present high-performance spin filtering, magnetoresistance, and low-bias spin negative differential resistance effects by tuning the external magnetic field. These results show that the Fe-phthalocyanine dimer has the potential to design future molecular spintronic devices.展开更多
Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact...Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT.the groove is the key factor producing NDR.展开更多
基金supports from B.P.Poddar Institute of Management and Technology(ECE Dept),Kolkatasupport by TEQIP-PhaseⅢunder University College of Technology-Calcutta University(UCT-CU)through award of a fellowship
文摘The double barrier quantum well（DBQW） resonant tunneling diode（RTD） structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge（1-z）Cz on Si（1-x-y）GexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.
基金Project supported by the National Natural Science Foundation of China(Nos.61302009,61571171)
文摘To improve the logic stability of conventional multi-valued logic（MVL） circuits designed with a GaNbased resonate tunneling diode（RTD）, we proposed a GaN/InGaN/AlGaN multi-quantum well（MQW） RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green＇s function（NEGF） method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AIGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD8 is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.
文摘A new lateral insulated-gate bipolar transistor （LIGBT） structure on SOI substrate, called an n-region controlled anode LIGBT （NCA-LIGBT）, is proposed and discussed. The n-region controlled anode concept results in fast switch speeds, efficient area usage and effective suppression NDR in forward I-V characteristics. Simulation results of the key parameters （n-region doping concentration, length, thickness and p-base doping concentration） show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state voltage drop. The proposed LIGBT is a novel device for power ICs such as PDP scan driver ICs.
文摘This paper reports the piezoresistive effect of a resonant tunneling diode （RTD） in a microstructure. The fourbeam structure is analyzed and fabricated by positing RTDs at the stress sensitive regions. Stress along the [110] orienta- tion and [110]ientation induces a change in the RTD＇s current-voltage （I-V） curves,i, e., the meso-piezoresistance variety,mainly in its negative different resistance （NDR） region. By different methods,the mechanic-electric coupling characteristic of RTD is studied and the consistent 10^9Pa^1 piezoresistive coefficients are discovered.
文摘Sodic soils have immense productivity potential, if managed through proper technology interventions. Biocompost is prepared by composting pressmud (a sugar industry byproduct) received from cane juice filtration and spent wash received from distilleries through microbial aerobic decomposition and can be used to reclaim sodic soils. Field experiments were conducted during the wet season of 2011 and 2012 to study the effect of incorporation of biocompost in sodic soil with four treatments: T1—Control, T2—Biocompost at 2 t ha-1, T3—Biocompost at 4 t ha-1 and T4—Biocompost at 6 t ha-1. The two promising salt tolerant rice varieties preferred by farmers, Narendra usar 3 and NDR 359 were used as test crops, which can produce yields ranging between 2-4 t ha-1 in soil having a pH range of 9.2 to 10.5. Among the different doses of biocompost tested, application of biocompost at 6 t ha-1 registered highest yields, enabled by a higher biomass, ear bearing tiller (EBT), and grain fertility in both varieties. Narendra usar 3 was more responsive to treatments even at lower doses of biocompost than NDR 359, but NDR 359 yielded slightly higher than Narendra usar 3 in all treatments. Soil health was also improved evidently on better fertility and low soil pH and EC at harvest. Thus, biocompost can be considered as a commercially viable, environmentally acceptable and practically enforceable option for improving the crop productivity and soil fertility status.
文摘目前共振隧穿二极管(RTD)多值逻辑电路研究采用多个MOSFETs组合,以逼近RTD特性,这是现有逻辑功能验证的不足。针对该问题,通过建立对称双势垒RTD电子输运的解析模型,进而采用SILVACO TCAD对Ga As/Al Ga As基对称DBS RTD器件的电学特性进行仿真实验研究。根据仿真实验的结果分析总结了势阱和势垒宽度对Ga As/Al Ga As基对称DBS RTD负阻特性影响的规律,并根据MVL电路设计应用的低压、低功耗、适当峰谷电流比和工艺可实现性等要求,通过大量的仿真优化实验提出采用Ga As/Al Ga As基对称DBS RTD实现多值逻辑电路设计所需的对称DBS RTD器件设计参数窗口。
基金Supported by the National Natural Science Foundation of China under Grant Nos 61106123 and 61275034the National Basic Research Program of China under Grant No 2013CB328705
文摘Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.
基金Supported by the National Natural Science Foundation of China under Grant No 11104115the Natural Science Foundation of Shandong Province under Grant No ZR2016AM11
文摘Based on the non-equilibrium Green＇s method and density functional theory, the magnetic transport of Fe- phthMocyanine dimers with two armchair single-wailed carbon nanotube electrodes is investigated. The results show that the system can present high-performance spin filtering, magnetoresistance, and low-bias spin negative differential resistance effects by tuning the external magnetic field. These results show that the Fe-phthalocyanine dimer has the potential to design future molecular spintronic devices.
基金Supported by "973" National Key Basic Research Program ( No. 2002CB311905) andYoung Teacher Foundation of Tianjin University.
文摘Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT.the groove is the key factor producing NDR.
基金国家重点基础研究发展规划(批准号:2001CB610503)和国家自然科学基金(批准号:90101020,90301009,10174035)资助项目 Project supported by the State Key Development Program for Basic Research of China(No. 2001CB610503) and the National Natural Science Foundation of China(Nos.90101020,90301009,10174035)
