Low-level exposure to environmental pollutants such as BDO2 contributes directly and indirectly to an increase in PCa. The aim of this study was to define the cellular changes associated with micro-doses of Butadiene ...Low-level exposure to environmental pollutants such as BDO2 contributes directly and indirectly to an increase in PCa. The aim of this study was to define the cellular changes associated with micro-doses of Butadiene Diepoxide (BDO2) in prostate cancer cells. We observed that micro-doses of BDO2 resulted in dose- and time-dependent increases in cytotoxicity and increased expression of prostate tumor markers in LNCaP(AR+) and DU145(AR-) cells. There was an increased sensitivity of DU145(AR-) cells to BDO2 toxicity which was reversed by transient transfection of AR into theses cell. Exposure of prostate cells to BDO2 increases cytotoxicity, and apoptosis, which correlates with increases in caspases and Bcl2 protein and mRNA levels. In cell DU145(AR-) cell transient transfected with a functional AR, the levels of cytotoxicity and caspase activity were decreased in the presence of BDO2, but BDO2-induced apoptotic protein expression was unaltered. This study provides evidence that micro-doses of BDO2 modulate prostate cell toxicity by promoting apoptosis and tumor gene expression.展开更多
以屏蔽栅沟槽(SGT)MOSFET为研究对象,研究了重离子诱发的单粒子微剂量效应的现象及物理机理。对不同偏置电压下的30 V SGT MOSFET进行重离子辐照试验,分析了重离子轰击后器件转移特性曲线的变化趋势,揭示单粒子微剂量效应的退化规律。...以屏蔽栅沟槽(SGT)MOSFET为研究对象,研究了重离子诱发的单粒子微剂量效应的现象及物理机理。对不同偏置电压下的30 V SGT MOSFET进行重离子辐照试验,分析了重离子轰击后器件转移特性曲线的变化趋势,揭示单粒子微剂量效应的退化规律。研究发现重离子入射会引起器件的亚阈值电流增大,导致阈值电压负向漂移,且负栅压下器件的亚阈值电压负向漂移更严重。试验结果结合TCAD仿真进一步揭示在栅氧化层侧墙处Si/SiO_(2)界面的带正电的氧化物陷阱电荷是导致器件阈值电压和亚阈值电压等参数退化的主要原因。研究结果可为SGT MOSFET单粒子微剂量效应评估和建模提供指导。展开更多
文摘Low-level exposure to environmental pollutants such as BDO2 contributes directly and indirectly to an increase in PCa. The aim of this study was to define the cellular changes associated with micro-doses of Butadiene Diepoxide (BDO2) in prostate cancer cells. We observed that micro-doses of BDO2 resulted in dose- and time-dependent increases in cytotoxicity and increased expression of prostate tumor markers in LNCaP(AR+) and DU145(AR-) cells. There was an increased sensitivity of DU145(AR-) cells to BDO2 toxicity which was reversed by transient transfection of AR into theses cell. Exposure of prostate cells to BDO2 increases cytotoxicity, and apoptosis, which correlates with increases in caspases and Bcl2 protein and mRNA levels. In cell DU145(AR-) cell transient transfected with a functional AR, the levels of cytotoxicity and caspase activity were decreased in the presence of BDO2, but BDO2-induced apoptotic protein expression was unaltered. This study provides evidence that micro-doses of BDO2 modulate prostate cell toxicity by promoting apoptosis and tumor gene expression.
文摘以屏蔽栅沟槽(SGT)MOSFET为研究对象,研究了重离子诱发的单粒子微剂量效应的现象及物理机理。对不同偏置电压下的30 V SGT MOSFET进行重离子辐照试验,分析了重离子轰击后器件转移特性曲线的变化趋势,揭示单粒子微剂量效应的退化规律。研究发现重离子入射会引起器件的亚阈值电流增大,导致阈值电压负向漂移,且负栅压下器件的亚阈值电压负向漂移更严重。试验结果结合TCAD仿真进一步揭示在栅氧化层侧墙处Si/SiO_(2)界面的带正电的氧化物陷阱电荷是导致器件阈值电压和亚阈值电压等参数退化的主要原因。研究结果可为SGT MOSFET单粒子微剂量效应评估和建模提供指导。
