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Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system
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作者 Yongle Lou Yuming Zhang +2 位作者 Hui Guo Daqing Xu Yimen Zhang 《Journal of Semiconductors》 EI CAS CSCD 2017年第6期14-17,共4页
The mechanism of perpendicular magnetic anisotropy(PMA)in a MgO-based magnetic tunnel junction(MTJ)has been studied in this article.By comparing the magnetic properties and elementary composition analysis for diff... The mechanism of perpendicular magnetic anisotropy(PMA)in a MgO-based magnetic tunnel junction(MTJ)has been studied in this article.By comparing the magnetic properties and elementary composition analysis for different CoFeB-based structures,such as Ta/CoFeB/MgO,Ta/CoFeB/Ta and Ru/CoFeB/MgO structures,it is found that a certain amount of Fe-oxide existing at the interface of CoFeB/MgO is helpful to enhance the PMA and the PMA is originated from the interface of CoFeB/MgO.In addition,Ta film plays an important role to enhance the PMA in Ta/CoFeB/MgO structure. 展开更多
关键词 perpendicular magnetic anisotropy mgo-based mtj X-ray photoelectron spectroscopy Fe-oxide
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