Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray dif...Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm[2]; a characteristic temperature T 0 of 145 K were observed for the laser diode.展开更多
文摘Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm[2]; a characteristic temperature T 0 of 145 K were observed for the laser diode.
