The title compound [In（H2ip）（pdc）（H2O）] （H3ip = 5-hydroxyisophthalic acid, H2Pdc = pyridine-2,6-dicarboxylic acid） has been synthesized and characterized by single-crystal X-ray diffraction analysis. It crysta...The title compound [In（H2ip）（pdc）（H2O）] （H3ip = 5-hydroxyisophthalic acid, H2Pdc = pyridine-2,6-dicarboxylic acid） has been synthesized and characterized by single-crystal X-ray diffraction analysis. It crystallizes in monoclinic, space group P21/c with a = 13.830（8）, b = 6.488（4）, c = 17.632（10）A^°, β = 92.510（10）°, C15H10InNO10, Mr= 479.06, V = 1580.6（15）A^°3, Z = 4, De= 2.013 g/cm^3, F（000） = 944,μ = 1.557 mm^-1, the final R = 0.0413 and wR = 0.0793 for 2950 observed reflections with I 〉 2σ（I）. The In（Ⅲ） ion is seven-coordinated in a slightly distorted penta-bipyramidal geometry. The mixed ligands connect the In（Ⅲ） ions into 21 helical chains along the [010] direction, and the hydrogen bonds assemble the chains into a three-dimensional supramolecular network.展开更多
The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer ...The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer （LT-InN） is introduced to overcome the drawbacks of thermal instability of LiAlO2 （LAO） and to relieve the strains due to a large thermal mismatch be- tween LAO and InN. Then the high temperature m-plane InN （1 1 00） epilayers （HT-InN） were grown. The results of X-ray diffraction （XRD） suggest that the m-plane InN （1 1 00） epilayer is a single crystal. The X-ray rocking curves （co scans） （XRC） and atomic force microscopy （AFM） indicate that the m-plane InN （1 1 00） epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K.展开更多
Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, ...Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2＂Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm＂2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide （InSb） growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached.展开更多
基金supported by 973 Program (2006CB932900)NNSFC (20571074)NSF of Fujian Province (2007J172)
文摘The title compound [In（H2ip）（pdc）（H2O）] （H3ip = 5-hydroxyisophthalic acid, H2Pdc = pyridine-2,6-dicarboxylic acid） has been synthesized and characterized by single-crystal X-ray diffraction analysis. It crystallizes in monoclinic, space group P21/c with a = 13.830（8）, b = 6.488（4）, c = 17.632（10）A^°, β = 92.510（10）°, C15H10InNO10, Mr= 479.06, V = 1580.6（15）A^°3, Z = 4, De= 2.013 g/cm^3, F（000） = 944,μ = 1.557 mm^-1, the final R = 0.0413 and wR = 0.0793 for 2950 observed reflections with I 〉 2σ（I）. The In（Ⅲ） ion is seven-coordinated in a slightly distorted penta-bipyramidal geometry. The mixed ligands connect the In（Ⅲ） ions into 21 helical chains along the [010] direction, and the hydrogen bonds assemble the chains into a three-dimensional supramolecular network.
基金supported by the Special Funds for the Major State Basic Research Project (Grant No. 2011CB301900)the High-Tech Research Project (Grant No. 2011AA03A103)+2 种基金the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60721063,60906025, 60936004 and 61176063)the Natural Science Foundation of Jiangsu Province (Grant Nos. BK2011010, BK2009255, BK2010178 andBK2010385)the Research Funds from NJU-Yangzhou Institute of Opto-electronics
文摘The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer （LT-InN） is introduced to overcome the drawbacks of thermal instability of LiAlO2 （LAO） and to relieve the strains due to a large thermal mismatch be- tween LAO and InN. Then the high temperature m-plane InN （1 1 00） epilayers （HT-InN） were grown. The results of X-ray diffraction （XRD） suggest that the m-plane InN （1 1 00） epilayer is a single crystal. The X-ray rocking curves （co scans） （XRC） and atomic force microscopy （AFM） indicate that the m-plane InN （1 1 00） epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K.
文摘Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2＂Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm＂2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide （InSb） growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached.
