A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors （DHBTs） is implemented as a seven-port symbolically defined device ...A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors （DHBTs） is implemented as a seven-port symbolically defined device （SDD） in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.展开更多
A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previou...A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.展开更多
Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performa...Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2：1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic（CML） with 30 transistors.The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply.展开更多
文摘A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors （DHBTs） is implemented as a seven-port symbolically defined device （SDD） in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.
基金supported by the State Key Development Program tor Basic Research of China(No.2010CB327504)
文摘A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.
文摘Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2：1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic（CML） with 30 transistors.The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply.
