Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 P...Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ～78% at wavelength of 400～700 nm have been achieved for the films on polyester at room temperature.展开更多
ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed b...ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed by the Hall Technique, X-ray diffraction, and X-ray photoelectron spectroscopy. XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The degree of crystallinity increases from less than 45% to more than 90% when the substrate temperature increases from 80 to 300 ℃. The In and Sn exist in the chemical state of In^3＋ and Sn^4＋, respectively, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body. For ITO films deposited under 180 ℃ , the carrier concentration are mainly provided by oxygen vacancies, and the dominant electron carrier scattering mechanism is grain boundary scattering between the crystal and the amorphous grain. For ITO films deposited over 180 ℃, the carrier concentration are provided by tin doping, and the dominant scattering mechanism transforms from grain boundary scattering between the crystal grains to ionized impurity scattering with increasing deposition temperature.展开更多
The thin films of Cu2O are deposited by electrodeposition technique onto indium tin oxide（ITO）-coated glass substrate at different potentials. The precursor is an aqueous solution which contains respectively 0.05 M ...The thin films of Cu2O are deposited by electrodeposition technique onto indium tin oxide（ITO）-coated glass substrate at different potentials. The precursor is an aqueous solution which contains respectively 0.05 M of CuSO4 and citric acid at kept temperature of 60℃ and the applied potential varies within the {-0：4 V,-0：7 V}SCE range. Based on the chronocoulometry（CC） process, the electrochemical, structural and optical parameters are determined. We measured the current as function of potential within the {-0：4 V,-0：7 V} range and the higher current is found to be within the {-0：7 V,-0：3 V} band. The grain sizes are of 12.12 nm and 35.47 nm according to（110） and（221） orientations respectively. The high textural coefficient of 0.943 is recorded for the potential -0：7 V.The transmittance of 72.25 %, within the visible band, is obtained for the as-grown layer at -0：4 V and the band gap is found to be 2.2 e V for the electrodeposition potential of -0：7 V.展开更多
文摘Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ～78% at wavelength of 400～700 nm have been achieved for the films on polyester at room temperature.
文摘ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed by the Hall Technique, X-ray diffraction, and X-ray photoelectron spectroscopy. XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The degree of crystallinity increases from less than 45% to more than 90% when the substrate temperature increases from 80 to 300 ℃. The In and Sn exist in the chemical state of In^3＋ and Sn^4＋, respectively, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body. For ITO films deposited under 180 ℃ , the carrier concentration are mainly provided by oxygen vacancies, and the dominant electron carrier scattering mechanism is grain boundary scattering between the crystal and the amorphous grain. For ITO films deposited over 180 ℃, the carrier concentration are provided by tin doping, and the dominant scattering mechanism transforms from grain boundary scattering between the crystal grains to ionized impurity scattering with increasing deposition temperature.
基金Project supported the PNR (Nos. 8/U311/R77, U311/R81)the "Agencethematique de rechercheen science ettechnologie" (ATRST)+2 种基金the National Administration of Scientific Researchthe CNEPRU of Oran University of Sciences and Technology (No. B00L02UN310220130011)the Scientific Research Projects Coordination (Nos. 2012-01-01-KAP05, 2012-01-01-KAP06) Yildiz Technical University
文摘The thin films of Cu2O are deposited by electrodeposition technique onto indium tin oxide（ITO）-coated glass substrate at different potentials. The precursor is an aqueous solution which contains respectively 0.05 M of CuSO4 and citric acid at kept temperature of 60℃ and the applied potential varies within the {-0：4 V,-0：7 V}SCE range. Based on the chronocoulometry（CC） process, the electrochemical, structural and optical parameters are determined. We measured the current as function of potential within the {-0：4 V,-0：7 V} range and the higher current is found to be within the {-0：7 V,-0：3 V} band. The grain sizes are of 12.12 nm and 35.47 nm according to（110） and（221） orientations respectively. The high textural coefficient of 0.943 is recorded for the potential -0：7 V.The transmittance of 72.25 %, within the visible band, is obtained for the as-grown layer at -0：4 V and the band gap is found to be 2.2 e V for the electrodeposition potential of -0：7 V.
